Leonard C Feldman

Prof./Dir Inst Materials

  • United States

  • 17167 Citations
  • 70 h-Index
1969 …2019
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Fingerprint Dive into the research topics where Leonard C Feldman is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

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Silicon Chemical Compounds
silicon Physics & Astronomy
Ions Engineering & Materials Science
Oxides Chemical Compounds
oxides Physics & Astronomy
Passivation Engineering & Materials Science
ion scattering Physics & Astronomy
backscattering Physics & Astronomy

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Research Output 1969 2019

Channeling in the helium ion microscope

Hijazi, H., Li, M., Barbacci, D., Schultz, A., Thorpe, R., Gustafsson, T. & Feldman, L. C., Oct 1 2019, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 456, p. 92-96 5 p.

Research output: Contribution to journalArticle

Ion microscopes
ion microscopes
helium ions
Helium
Backscattering

Chemical state of phosphorous at the SiC/SiO 2 interface

Pitthan, E., Amarasinghe, V. P., Xu, C., Gobbi, A. L., Dartora, G. H. S., Gustafsson, T., Feldman, L. C. & Stedile, F. C., Apr 1 2019, In : Thin Solid Films. 675, p. 172-176 5 p.

Research output: Contribution to journalArticle

Phosphorus
phosphorus
Silicon
Substrates
Angle measurement
1 Citation (Scopus)

Contactless Electrical and Structural Characterization of Semiconductor Nanowires with Axially Modulated Doping Profiles

Yuan, W., Tutuncuoglu, G., Mohabir, A., Liu, L., Feldman, L. C., Filler, M. A. & Shan, J. W., Apr 12 2019, In : Small. 15, 15, 1805140.

Research output: Contribution to journalArticle

Nanowires
Semiconductors
Doping (additives)
Semiconductor materials
Spectrum Analysis

Normal-state and superconducting properties of Co-doped BaFe2As2 and MgB2 thin films after focused helium ion beam irradiation

Kasaei, L., Manichev, V., Li, M., Feldman, L. C., Gustafsson, T., Collantes, Y., Hellstrom, E., Demir, M., Acharya, N., Bhattarai, P., Chen, K., Xi, X. X. & Davidson, B. A., Aug 1 2019, In : Superconductor Science and Technology. 32, 9, 095009.

Research output: Contribution to journalArticle

Helium
helium ions
Ion beams
Focused ion beams
ion beams
1 Citation (Scopus)

Post-implantation depth profiling using time-domain Brillouin scattering

Baydin, A., Krzyzanowska, H., Feldman, L. C. & Tolk, N., Feb 1 2019, In : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 440, p. 36-40 5 p.

Research output: Contribution to journalArticle

Brillouin scattering
Depth profiling
Gallium arsenide
implantation
Silicon carbide