α-Particle Detection and Charge Transport Characteristics in the A3M2I9 Defect Perovskites (A = Cs, Rb; M = Bi, Sb)

Kyle M. McCall, Zhifu Liu, Giancarlo Trimarchi, Constantinos C. Stoumpos, Wenwen Lin, Yihui He, Ido Hadar, Mercouri G Kanatzidis, Bruce W. Wessels

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have investigated the defect perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb) as materials for radiation detection. The phase purity of Bridgman-grown A3M2I9 single crystals was confirmed via high-resolution synchrotron X-ray diffraction, while density functional theory calculations (DFT) show surprisingly dispersive bands in the out-of-plane direction for these layered materials, with low effective masses for both holes and electrons. Accordingly, each of the four A3M2I9 defect perovskites showed response to 241Am α-particle irradiation for hole and electron electrode configurations, a remarkable ambipolar response that resembles the 3D halide perovskites. The electron response spectra were used to estimate the mobility-lifetime product (μτ)e for electrons in these materials, with Rb3Bi2I9 showing the lowest (μτ)e value of 1.7 × 10-6 cm2 V-1 and Cs3Bi2I9 the highest (μτ)e of 5.4 × 10-5 cm2 V-1. The rise time of the α-particle-generated pulse was used to estimate the electron mobility μe of the A3M2I9 defect perovskites, which ranged from 0.32 cm2 V-1s-1 for Rb3Sb2I9 to 4.3 cm2 V-1s-1 in Cs3Bi2I9. Similar analysis of the hole response spectra yielded (μτ)h values for each A3M2I9 compound, with Cs3Bi2I9 again showing the highest (μτ)h value of 1.8 × 10-5 cm2 V-1, while Rb3Bi2I9 showed the lowest (μτ)h with 2.0 × 10-6 cm2 V-1. Rise time analysis gave hole mobilities ranging from 1.7 cm2 V-1 s-1 for Cs3Bi2I9 to 0.14 cm2 V-1 s-1 for Cs3Sb2I9. Comparing the experimental electron and hole mobilities to the effective masses obtained from DFT calculations revealed sizable discrepancies, possibly indicating self-trapping of charge carriers due to electron-phonon interactions. The α-particle response of the A3M2I9 defect perovskites demonstrates their potential as semiconductor radiation detectors, with Cs3Bi2I9 and Cs3Sb2I9 showing the most promise.

Original languageEnglish
Pages (from-to)3748-3762
Number of pages15
JournalACS Photonics
Volume5
Issue number9
DOIs
Publication statusPublished - Sep 19 2018

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perovskites
Charge transfer
Electrons
Defects
Hole mobility
Electron mobility
defects
Density functional theory
hole mobility
electron mobility
Semiconductor detectors
electrons
Electron-phonon interactions
Radiation detectors
density functional theory
Charge carriers
Synchrotrons
radiation detectors
Phonons
estimates

Keywords

  • charge transport
  • halide perovskite
  • radiation detection
  • semiconductor detector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

McCall, K. M., Liu, Z., Trimarchi, G., Stoumpos, C. C., Lin, W., He, Y., ... Wessels, B. W. (2018). α-Particle Detection and Charge Transport Characteristics in the A3M2I9 Defect Perovskites (A = Cs, Rb; M = Bi, Sb). ACS Photonics, 5(9), 3748-3762. https://doi.org/10.1021/acsphotonics.8b00813

α-Particle Detection and Charge Transport Characteristics in the A3M2I9 Defect Perovskites (A = Cs, Rb; M = Bi, Sb). / McCall, Kyle M.; Liu, Zhifu; Trimarchi, Giancarlo; Stoumpos, Constantinos C.; Lin, Wenwen; He, Yihui; Hadar, Ido; Kanatzidis, Mercouri G; Wessels, Bruce W.

In: ACS Photonics, Vol. 5, No. 9, 19.09.2018, p. 3748-3762.

Research output: Contribution to journalArticle

McCall, KM, Liu, Z, Trimarchi, G, Stoumpos, CC, Lin, W, He, Y, Hadar, I, Kanatzidis, MG & Wessels, BW 2018, 'α-Particle Detection and Charge Transport Characteristics in the A3M2I9 Defect Perovskites (A = Cs, Rb; M = Bi, Sb)', ACS Photonics, vol. 5, no. 9, pp. 3748-3762. https://doi.org/10.1021/acsphotonics.8b00813
McCall, Kyle M. ; Liu, Zhifu ; Trimarchi, Giancarlo ; Stoumpos, Constantinos C. ; Lin, Wenwen ; He, Yihui ; Hadar, Ido ; Kanatzidis, Mercouri G ; Wessels, Bruce W. / α-Particle Detection and Charge Transport Characteristics in the A3M2I9 Defect Perovskites (A = Cs, Rb; M = Bi, Sb). In: ACS Photonics. 2018 ; Vol. 5, No. 9. pp. 3748-3762.
@article{aa60fafb9c154f7cbd0bb68ff7c404d2,
title = "α-Particle Detection and Charge Transport Characteristics in the A3M2I9 Defect Perovskites (A = Cs, Rb; M = Bi, Sb)",
abstract = "We have investigated the defect perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb) as materials for radiation detection. The phase purity of Bridgman-grown A3M2I9 single crystals was confirmed via high-resolution synchrotron X-ray diffraction, while density functional theory calculations (DFT) show surprisingly dispersive bands in the out-of-plane direction for these layered materials, with low effective masses for both holes and electrons. Accordingly, each of the four A3M2I9 defect perovskites showed response to 241Am α-particle irradiation for hole and electron electrode configurations, a remarkable ambipolar response that resembles the 3D halide perovskites. The electron response spectra were used to estimate the mobility-lifetime product (μτ)e for electrons in these materials, with Rb3Bi2I9 showing the lowest (μτ)e value of 1.7 × 10-6 cm2 V-1 and Cs3Bi2I9 the highest (μτ)e of 5.4 × 10-5 cm2 V-1. The rise time of the α-particle-generated pulse was used to estimate the electron mobility μe of the A3M2I9 defect perovskites, which ranged from 0.32 cm2 V-1s-1 for Rb3Sb2I9 to 4.3 cm2 V-1s-1 in Cs3Bi2I9. Similar analysis of the hole response spectra yielded (μτ)h values for each A3M2I9 compound, with Cs3Bi2I9 again showing the highest (μτ)h value of 1.8 × 10-5 cm2 V-1, while Rb3Bi2I9 showed the lowest (μτ)h with 2.0 × 10-6 cm2 V-1. Rise time analysis gave hole mobilities ranging from 1.7 cm2 V-1 s-1 for Cs3Bi2I9 to 0.14 cm2 V-1 s-1 for Cs3Sb2I9. Comparing the experimental electron and hole mobilities to the effective masses obtained from DFT calculations revealed sizable discrepancies, possibly indicating self-trapping of charge carriers due to electron-phonon interactions. The α-particle response of the A3M2I9 defect perovskites demonstrates their potential as semiconductor radiation detectors, with Cs3Bi2I9 and Cs3Sb2I9 showing the most promise.",
keywords = "charge transport, halide perovskite, radiation detection, semiconductor detector",
author = "McCall, {Kyle M.} and Zhifu Liu and Giancarlo Trimarchi and Stoumpos, {Constantinos C.} and Wenwen Lin and Yihui He and Ido Hadar and Kanatzidis, {Mercouri G} and Wessels, {Bruce W.}",
year = "2018",
month = "9",
day = "19",
doi = "10.1021/acsphotonics.8b00813",
language = "English",
volume = "5",
pages = "3748--3762",
journal = "ACS Photonics",
issn = "2330-4022",
publisher = "American Chemical Society",
number = "9",

}

TY - JOUR

T1 - α-Particle Detection and Charge Transport Characteristics in the A3M2I9 Defect Perovskites (A = Cs, Rb; M = Bi, Sb)

AU - McCall, Kyle M.

AU - Liu, Zhifu

AU - Trimarchi, Giancarlo

AU - Stoumpos, Constantinos C.

AU - Lin, Wenwen

AU - He, Yihui

AU - Hadar, Ido

AU - Kanatzidis, Mercouri G

AU - Wessels, Bruce W.

PY - 2018/9/19

Y1 - 2018/9/19

N2 - We have investigated the defect perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb) as materials for radiation detection. The phase purity of Bridgman-grown A3M2I9 single crystals was confirmed via high-resolution synchrotron X-ray diffraction, while density functional theory calculations (DFT) show surprisingly dispersive bands in the out-of-plane direction for these layered materials, with low effective masses for both holes and electrons. Accordingly, each of the four A3M2I9 defect perovskites showed response to 241Am α-particle irradiation for hole and electron electrode configurations, a remarkable ambipolar response that resembles the 3D halide perovskites. The electron response spectra were used to estimate the mobility-lifetime product (μτ)e for electrons in these materials, with Rb3Bi2I9 showing the lowest (μτ)e value of 1.7 × 10-6 cm2 V-1 and Cs3Bi2I9 the highest (μτ)e of 5.4 × 10-5 cm2 V-1. The rise time of the α-particle-generated pulse was used to estimate the electron mobility μe of the A3M2I9 defect perovskites, which ranged from 0.32 cm2 V-1s-1 for Rb3Sb2I9 to 4.3 cm2 V-1s-1 in Cs3Bi2I9. Similar analysis of the hole response spectra yielded (μτ)h values for each A3M2I9 compound, with Cs3Bi2I9 again showing the highest (μτ)h value of 1.8 × 10-5 cm2 V-1, while Rb3Bi2I9 showed the lowest (μτ)h with 2.0 × 10-6 cm2 V-1. Rise time analysis gave hole mobilities ranging from 1.7 cm2 V-1 s-1 for Cs3Bi2I9 to 0.14 cm2 V-1 s-1 for Cs3Sb2I9. Comparing the experimental electron and hole mobilities to the effective masses obtained from DFT calculations revealed sizable discrepancies, possibly indicating self-trapping of charge carriers due to electron-phonon interactions. The α-particle response of the A3M2I9 defect perovskites demonstrates their potential as semiconductor radiation detectors, with Cs3Bi2I9 and Cs3Sb2I9 showing the most promise.

AB - We have investigated the defect perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb) as materials for radiation detection. The phase purity of Bridgman-grown A3M2I9 single crystals was confirmed via high-resolution synchrotron X-ray diffraction, while density functional theory calculations (DFT) show surprisingly dispersive bands in the out-of-plane direction for these layered materials, with low effective masses for both holes and electrons. Accordingly, each of the four A3M2I9 defect perovskites showed response to 241Am α-particle irradiation for hole and electron electrode configurations, a remarkable ambipolar response that resembles the 3D halide perovskites. The electron response spectra were used to estimate the mobility-lifetime product (μτ)e for electrons in these materials, with Rb3Bi2I9 showing the lowest (μτ)e value of 1.7 × 10-6 cm2 V-1 and Cs3Bi2I9 the highest (μτ)e of 5.4 × 10-5 cm2 V-1. The rise time of the α-particle-generated pulse was used to estimate the electron mobility μe of the A3M2I9 defect perovskites, which ranged from 0.32 cm2 V-1s-1 for Rb3Sb2I9 to 4.3 cm2 V-1s-1 in Cs3Bi2I9. Similar analysis of the hole response spectra yielded (μτ)h values for each A3M2I9 compound, with Cs3Bi2I9 again showing the highest (μτ)h value of 1.8 × 10-5 cm2 V-1, while Rb3Bi2I9 showed the lowest (μτ)h with 2.0 × 10-6 cm2 V-1. Rise time analysis gave hole mobilities ranging from 1.7 cm2 V-1 s-1 for Cs3Bi2I9 to 0.14 cm2 V-1 s-1 for Cs3Sb2I9. Comparing the experimental electron and hole mobilities to the effective masses obtained from DFT calculations revealed sizable discrepancies, possibly indicating self-trapping of charge carriers due to electron-phonon interactions. The α-particle response of the A3M2I9 defect perovskites demonstrates their potential as semiconductor radiation detectors, with Cs3Bi2I9 and Cs3Sb2I9 showing the most promise.

KW - charge transport

KW - halide perovskite

KW - radiation detection

KW - semiconductor detector

UR - http://www.scopus.com/inward/record.url?scp=85052985842&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052985842&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.8b00813

DO - 10.1021/acsphotonics.8b00813

M3 - Article

VL - 5

SP - 3748

EP - 3762

JO - ACS Photonics

JF - ACS Photonics

SN - 2330-4022

IS - 9

ER -