σ-π molecular dielectric multilayers for low-voltage organic thin-film transistors

Myung Han Yoon, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

234 Citations (Scopus)

Abstract

Very thin (2.3-5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (up to ≈2,500 nF·cm-2), excellent insulating properties (leakage current densities as low as 10 -9 A·cm-2), and single-layer dielectric constant (k) of ≈16. These 3D self-assembled multilayers enable organic thin-film transistor function at very low source-drain, gate, and threshold voltages (<1 V) and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

Original languageEnglish
Pages (from-to)4678-4682
Number of pages5
JournalProceedings of the National Academy of Sciences of the United States of America
Volume102
Issue number13
DOIs
Publication statusPublished - Mar 29 2005

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Electric Capacitance
Semiconductors
Silicon

Keywords

  • Gate insulator
  • Molecular multilayer
  • Organic dielectric
  • Self-assembly

ASJC Scopus subject areas

  • Genetics
  • General

Cite this

σ-π molecular dielectric multilayers for low-voltage organic thin-film transistors. / Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J.

In: Proceedings of the National Academy of Sciences of the United States of America, Vol. 102, No. 13, 29.03.2005, p. 4678-4682.

Research output: Contribution to journalArticle

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