(100) and (110) SiSiO2 interface studies by MeV ion backscattering

T. E. Jackman; Jack R. MacDonald; Leonard C Feldman; P. J. Silverman; I. Stensgaard

doi:10.1016/0039-6028(80)90442-2

(100) and (110) SiSiO₂ interface studies by MeV ion backscattering

T. E. Jackman, Jack R. MacDonald, Leonard C Feldman, P. J. Silverman, I. Stensgaard

Rutgers University

Research output: Contribution to journal › Article

52 Citations (Scopus)

Abstract

Thin oxide layers on (110) and (100) Si have been studied by ion scattering experiments in a channeling grazing exit angle geometry. Oxides are found to be stoichiometric SiO₂ to within 10 Å of the (100) substrate surface, and 7 Å of the (110). The transition interface region between single crystal Si and the SiO₂ layer is abrupt and is characterized by approximately one to two monolayers of Si which is out of registration with the substrate lattice for the (110) case. The possibility of a layer of O-deficient oxide is also explored.

Original language	English
Pages (from-to)	35-42
Number of pages	8
Journal	Surface Science
Volume	100
Issue number	1
DOIs	https://doi.org/10.1016/0039-6028(80)90442-2
Publication status	Published - Jan 1 1980

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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Jackman, T. E., MacDonald, J. R., Feldman, L. C., Silverman, P. J., & Stensgaard, I. (1980). (100) and (110) SiSiO₂ interface studies by MeV ion backscattering. Surface Science, 100(1), 35-42. https://doi.org/10.1016/0039-6028(80)90442-2

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abstract = "Thin oxide layers on (110) and (100) Si have been studied by ion scattering experiments in a channeling grazing exit angle geometry. Oxides are found to be stoichiometric SiO2 to within 10 {\AA} of the (100) substrate surface, and 7 {\AA} of the (110). The transition interface region between single crystal Si and the SiO2 layer is abrupt and is characterized by approximately one to two monolayers of Si which is out of registration with the substrate lattice for the (110) case. The possibility of a layer of O-deficient oxide is also explored.",

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AU - Jackman, T. E.

AU - MacDonald, Jack R.

AU - Feldman, Leonard C

AU - Silverman, P. J.

AU - Stensgaard, I.

PY - 1980/1/1

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N2 - Thin oxide layers on (110) and (100) Si have been studied by ion scattering experiments in a channeling grazing exit angle geometry. Oxides are found to be stoichiometric SiO2 to within 10 Å of the (100) substrate surface, and 7 Å of the (110). The transition interface region between single crystal Si and the SiO2 layer is abrupt and is characterized by approximately one to two monolayers of Si which is out of registration with the substrate lattice for the (110) case. The possibility of a layer of O-deficient oxide is also explored.

AB - Thin oxide layers on (110) and (100) Si have been studied by ion scattering experiments in a channeling grazing exit angle geometry. Oxides are found to be stoichiometric SiO2 to within 10 Å of the (100) substrate surface, and 7 Å of the (110). The transition interface region between single crystal Si and the SiO2 layer is abrupt and is characterized by approximately one to two monolayers of Si which is out of registration with the substrate lattice for the (110) case. The possibility of a layer of O-deficient oxide is also explored.

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