(100) and (110) SiSiO2 interface studies by MeV ion backscattering

T. E. Jackman; Jack R. MacDonald; Leonard C Feldman; P. J. Silverman; I. Stensgaard

doi:10.1016/0039-6028(80)90442-2

(100) and (110) SiSiO₂ interface studies by MeV ion backscattering

T. E. Jackman, Jack R. MacDonald, Leonard C Feldman, P. J. Silverman, I. Stensgaard

Rutgers University

Research output: Contribution to journal › Article

52 Citations (Scopus)

Abstract

Thin oxide layers on (110) and (100) Si have been studied by ion scattering experiments in a channeling grazing exit angle geometry. Oxides are found to be stoichiometric SiO₂ to within 10 Å of the (100) substrate surface, and 7 Å of the (110). The transition interface region between single crystal Si and the SiO₂ layer is abrupt and is characterized by approximately one to two monolayers of Si which is out of registration with the substrate lattice for the (110) case. The possibility of a layer of O-deficient oxide is also explored.

Original language	English
Pages (from-to)	35-42
Number of pages	8
Journal	Surface Science
Volume	100
Issue number	1
DOIs	https://doi.org/10.1016/0039-6028(80)90442-2
Publication status	Published - Jan 1 1980

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ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Cite this

Jackman, T. E., MacDonald, J. R., Feldman, L. C., Silverman, P. J., & Stensgaard, I. (1980). (100) and (110) SiSiO₂ interface studies by MeV ion backscattering. Surface Science, 100(1), 35-42. https://doi.org/10.1016/0039-6028(80)90442-2

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AU - Stensgaard, I.

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Access to Document

10.1016/0039-6028(80)90442-2