(100) and (110) SiSiO2 interface studies by MeV ion backscattering

T. E. Jackman, Jack R. MacDonald, Leonard C Feldman, P. J. Silverman, I. Stensgaard

Research output: Contribution to journal › Article

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Abstract

Thin oxide layers on (110) and (100) Si have been studied by ion scattering experiments in a channeling grazing exit angle geometry. Oxides are found to be stoichiometric SiO2 to within 10 Å of the (100) substrate surface, and 7 Å of the (110). The transition interface region between single crystal Si and the SiO2 layer is abrupt and is characterized by approximately one to two monolayers of Si which is out of registration with the substrate lattice for the (110) case. The possibility of a layer of O-deficient oxide is also explored.

Original languageEnglish
Pages (from-to)35-42
Number of pages8
JournalSurface Science
Volume100
Issue number1
DOIs
Publication statusPublished - Jan 1 1980

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Backscattering
Oxides
backscattering
Ions
oxides
ions
grazing
ion scattering
Substrates
Monolayers
Single crystals
Scattering
Geometry
single crystals
Experiments

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Jackman, T. E., MacDonald, J. R., Feldman, L. C., Silverman, P. J., & Stensgaard, I. (1980). (100) and (110) SiSiO2 interface studies by MeV ion backscattering. Surface Science, 100(1), 35-42. https://doi.org/10.1016/0039-6028(80)90442-2

(100) and (110) SiSiO2 interface studies by MeV ion backscattering. / Jackman, T. E.; MacDonald, Jack R.; Feldman, Leonard C; Silverman, P. J.; Stensgaard, I.

In: Surface Science, Vol. 100, No. 1, 01.01.1980, p. 35-42.

Research output: Contribution to journal › Article

Jackman, TE, MacDonald, JR, Feldman, LC, Silverman, PJ & Stensgaard, I 1980, '(100) and (110) SiSiO2 interface studies by MeV ion backscattering', Surface Science, vol. 100, no. 1, pp. 35-42. https://doi.org/10.1016/0039-6028(80)90442-2
Jackman TE, MacDonald JR, Feldman LC, Silverman PJ, Stensgaard I. (100) and (110) SiSiO2 interface studies by MeV ion backscattering. Surface Science. 1980 Jan 1;100(1):35-42. https://doi.org/10.1016/0039-6028(80)90442-2
Jackman, T. E. ; MacDonald, Jack R. ; Feldman, Leonard C ; Silverman, P. J. ; Stensgaard, I. / (100) and (110) SiSiO2 interface studies by MeV ion backscattering. In: Surface Science. 1980 ; Vol. 100, No. 1. pp. 35-42.
@article{19fcb85a6bef48269c65af8a99abb49e,
title = "(100) and (110) SiSiO2 interface studies by MeV ion backscattering",
abstract = "Thin oxide layers on (110) and (100) Si have been studied by ion scattering experiments in a channeling grazing exit angle geometry. Oxides are found to be stoichiometric SiO2 to within 10 {\AA} of the (100) substrate surface, and 7 {\AA} of the (110). The transition interface region between single crystal Si and the SiO2 layer is abrupt and is characterized by approximately one to two monolayers of Si which is out of registration with the substrate lattice for the (110) case. The possibility of a layer of O-deficient oxide is also explored.",
author = "Jackman, {T. E.} and MacDonald, {Jack R.} and Feldman, {Leonard C} and Silverman, {P. J.} and I. Stensgaard",
year = "1980",
month = "1",
day = "1",
doi = "10.1016/0039-6028(80)90442-2",
language = "English",
volume = "100",
pages = "35--42",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - (100) and (110) SiSiO2 interface studies by MeV ion backscattering

AU - Jackman, T. E.

AU - MacDonald, Jack R.

AU - Feldman, Leonard C

AU - Silverman, P. J.

AU - Stensgaard, I.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - Thin oxide layers on (110) and (100) Si have been studied by ion scattering experiments in a channeling grazing exit angle geometry. Oxides are found to be stoichiometric SiO2 to within 10 Å of the (100) substrate surface, and 7 Å of the (110). The transition interface region between single crystal Si and the SiO2 layer is abrupt and is characterized by approximately one to two monolayers of Si which is out of registration with the substrate lattice for the (110) case. The possibility of a layer of O-deficient oxide is also explored.

AB - Thin oxide layers on (110) and (100) Si have been studied by ion scattering experiments in a channeling grazing exit angle geometry. Oxides are found to be stoichiometric SiO2 to within 10 Å of the (100) substrate surface, and 7 Å of the (110). The transition interface region between single crystal Si and the SiO2 layer is abrupt and is characterized by approximately one to two monolayers of Si which is out of registration with the substrate lattice for the (110) case. The possibility of a layer of O-deficient oxide is also explored.

UR - http://www.scopus.com/inward/record.url?scp=85025753717&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85025753717&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(80)90442-2

DO - 10.1016/0039-6028(80)90442-2

M3 - Article

VL - 100

SP - 35

EP - 42

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1

ER -

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