(100) and (110) SiSiO2 interface studies by MeV ion backscattering

T. E. Jackman, Jack R. MacDonald, Leonard C Feldman, P. J. Silverman, I. Stensgaard

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Abstract

Thin oxide layers on (110) and (100) Si have been studied by ion scattering experiments in a channeling grazing exit angle geometry. Oxides are found to be stoichiometric SiO2 to within 10 Å of the (100) substrate surface, and 7 Å of the (110). The transition interface region between single crystal Si and the SiO2 layer is abrupt and is characterized by approximately one to two monolayers of Si which is out of registration with the substrate lattice for the (110) case. The possibility of a layer of O-deficient oxide is also explored.

Original languageEnglish
Pages (from-to)35-42
Number of pages8
JournalSurface Science
Volume100
Issue number1
DOIs
Publication statusPublished - Jan 1 1980

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Jackman, T. E., MacDonald, J. R., Feldman, L. C., Silverman, P. J., & Stensgaard, I. (1980). (100) and (110) SiSiO2 interface studies by MeV ion backscattering. Surface Science, 100(1), 35-42. https://doi.org/10.1016/0039-6028(80)90442-2