14N depth distribution measurements for ultrathin dielectric films on silicon (100)

H. T. Tang, W. N. Lennard, Leonard C Feldman, M. L. Green, D. Brasen

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Nuclear reaction analysis has been employed to study the composition of thin silicon oxynitride films on Si(100) crystals prepared by rapid thermal processing in a N2O environment. The nitrogen concentration in the oxynitride films has been investigated as a function of both growth time and oxide thickness. Most nitrogen is incorporated into the film at an early stage; the presence of a nitrogen-rich region formed during this stage appears to retard further nitridation and oxidation. The nitrogen depth distribution in oxynitride films prepared by the rapid thermal processing technique is compared to that measured for a furnace-grown film.

Original languageEnglish
Pages (from-to)347-353
Number of pages7
JournalNuclear Inst. and Methods in Physics Research, B
Volume108
Issue number3
DOIs
Publication statusPublished - Feb 1996

Fingerprint

Dielectric films
Ultrathin films
Silicon
oxynitrides
Nitrogen
Rapid thermal processing
silicon
nitrogen
Nitridation
Nuclear reactions
nuclear reactions
Oxides
furnaces
Furnaces
Oxidation
Crystals
oxidation
oxides
Chemical analysis
crystals

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

14N depth distribution measurements for ultrathin dielectric films on silicon (100). / Tang, H. T.; Lennard, W. N.; Feldman, Leonard C; Green, M. L.; Brasen, D.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 108, No. 3, 02.1996, p. 347-353.

Research output: Contribution to journalArticle

Tang, H. T. ; Lennard, W. N. ; Feldman, Leonard C ; Green, M. L. ; Brasen, D. / 14N depth distribution measurements for ultrathin dielectric films on silicon (100). In: Nuclear Inst. and Methods in Physics Research, B. 1996 ; Vol. 108, No. 3. pp. 347-353.
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