14N depth distribution measurements for ultrathin dielectric films on silicon (100)

H. T. Tang; W. N. Lennard; Leonard C Feldman; M. L. Green; D. Brasen

doi:10.1016/0168-583X(95)01059-9

14N depth distribution measurements for ultrathin dielectric films on silicon (100)

H. T. Tang, W. N. Lennard, Leonard C Feldman, M. L. Green, D. Brasen

Rutgers University

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Nuclear reaction analysis has been employed to study the composition of thin silicon oxynitride films on Si(100) crystals prepared by rapid thermal processing in a N₂O environment. The nitrogen concentration in the oxynitride films has been investigated as a function of both growth time and oxide thickness. Most nitrogen is incorporated into the film at an early stage; the presence of a nitrogen-rich region formed during this stage appears to retard further nitridation and oxidation. The nitrogen depth distribution in oxynitride films prepared by the rapid thermal processing technique is compared to that measured for a furnace-grown film.

Original language	English
Pages (from-to)	347-353
Number of pages	7
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	108
Issue number	3
DOIs	https://doi.org/10.1016/0168-583X(95)01059-9
Publication status	Published - Feb 1996

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ASJC Scopus subject areas

Surfaces, Coatings and Films
Instrumentation
Surfaces and Interfaces

Cite this

Tang, H. T., Lennard, W. N., Feldman, L. C., Green, M. L., & Brasen, D. (1996). 14N depth distribution measurements for ultrathin dielectric films on silicon (100). Nuclear Inst. and Methods in Physics Research, B, 108(3), 347-353. https://doi.org/10.1016/0168-583X(95)01059-9

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10.1016/0168-583X(95)01059-9