Abstract
Nuclear reaction analysis has been employed to study the composition of thin silicon oxynitride films on Si(100) crystals prepared by rapid thermal processing in a N2O environment. The nitrogen concentration in the oxynitride films has been investigated as a function of both growth time and oxide thickness. Most nitrogen is incorporated into the film at an early stage; the presence of a nitrogen-rich region formed during this stage appears to retard further nitridation and oxidation. The nitrogen depth distribution in oxynitride films prepared by the rapid thermal processing technique is compared to that measured for a furnace-grown film.
| Original language | English |
|---|---|
| Pages (from-to) | 347-353 |
| Number of pages | 7 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 108 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Feb 1996 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
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14N depth distribution measurements for ultrathin dielectric films on silicon (100). / Tang, H. T.; Lennard, W. N.; Feldman, Leonard C; Green, M. L.; Brasen, D.
In: Nuclear Inst. and Methods in Physics Research, B, Vol. 108, No. 3, 02.1996, p. 347-353.Research output: Contribution to journal › Article
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TY - JOUR
T1 - 14N depth distribution measurements for ultrathin dielectric films on silicon (100)
AU - Tang, H. T.
AU - Lennard, W. N.
AU - Feldman, Leonard C
AU - Green, M. L.
AU - Brasen, D.
PY - 1996/2
Y1 - 1996/2
N2 - Nuclear reaction analysis has been employed to study the composition of thin silicon oxynitride films on Si(100) crystals prepared by rapid thermal processing in a N2O environment. The nitrogen concentration in the oxynitride films has been investigated as a function of both growth time and oxide thickness. Most nitrogen is incorporated into the film at an early stage; the presence of a nitrogen-rich region formed during this stage appears to retard further nitridation and oxidation. The nitrogen depth distribution in oxynitride films prepared by the rapid thermal processing technique is compared to that measured for a furnace-grown film.
AB - Nuclear reaction analysis has been employed to study the composition of thin silicon oxynitride films on Si(100) crystals prepared by rapid thermal processing in a N2O environment. The nitrogen concentration in the oxynitride films has been investigated as a function of both growth time and oxide thickness. Most nitrogen is incorporated into the film at an early stage; the presence of a nitrogen-rich region formed during this stage appears to retard further nitridation and oxidation. The nitrogen depth distribution in oxynitride films prepared by the rapid thermal processing technique is compared to that measured for a furnace-grown film.
UR - http://www.scopus.com/inward/record.url?scp=0039469657&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0039469657&partnerID=8YFLogxK
U2 - 10.1016/0168-583X(95)01059-9
DO - 10.1016/0168-583X(95)01059-9
M3 - Article
AN - SCOPUS:0039469657
VL - 108
SP - 347
EP - 353
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 3
ER -