@inproceedings{eac85158642c4b9781cd06823473a676,
title = "4H-SiC oxide characterization with SIMS using a 13C tracer",
abstract = "The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.",
keywords = "4H-SiC, Carbon defects, Carbon-13, Interface, Oxidation, SIMS",
author = "J. Fronheiser and K. Matocha and V. Tilak and Feldman, {L. C.}",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2009",
doi = "10.4028/www.scientific.net/MSF.615-617.513",
language = "English",
isbn = "9780878493340",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "513--516",
booktitle = "Silicon Carbide and Related Materials 2008",
}