Abstract
The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Pages | 513-516 |
| Number of pages | 4 |
| Volume | 615 617 |
| DOIs | |
| Publication status | Published - 2009 |
| Event | 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain Duration: Sep 7 2008 → Sep 11 2008 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 615 617 |
| ISSN (Print) | 02555476 |
Other
| Other | 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 |
|---|---|
| Country | Spain |
| City | Barcelona |
| Period | 9/7/08 → 9/11/08 |
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Keywords
- 4H-SiC
- Carbon defects
- Carbon-13
- Interface
- Oxidation
- SIMS
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
4H-SiC oxide characterization with SIMS using a 13C tracer. / Fronheiser, J.; Matocha, K.; Tilak, V.; Feldman, Leonard C.
Materials Science Forum. Vol. 615 617 2009. p. 513-516 (Materials Science Forum; Vol. 615 617).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - 4H-SiC oxide characterization with SIMS using a 13C tracer
AU - Fronheiser, J.
AU - Matocha, K.
AU - Tilak, V.
AU - Feldman, Leonard C
PY - 2009
Y1 - 2009
N2 - The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.
AB - The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.
KW - 4H-SiC
KW - Carbon defects
KW - Carbon-13
KW - Interface
KW - Oxidation
KW - SIMS
UR - http://www.scopus.com/inward/record.url?scp=79251542667&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79251542667&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.615-617.513
DO - 10.4028/www.scientific.net/MSF.615-617.513
M3 - Conference contribution
AN - SCOPUS:79251542667
SN - 9780878493340
VL - 615 617
T3 - Materials Science Forum
SP - 513
EP - 516
BT - Materials Science Forum
ER -