4H-SiC oxide characterization with SIMS using a 13C tracer

J. Fronheiser, K. Matocha, V. Tilak, L. C. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2008
Subtitle of host publicationECSCRM 2008
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9780878493340
Publication statusPublished - 2009

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


  • 4H-SiC
  • Carbon defects
  • Carbon-13
  • Interface
  • Oxidation
  • SIMS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of '4H-SiC oxide characterization with SIMS using a 13C tracer'. Together they form a unique fingerprint.

Cite this