4H-SiC oxide characterization with SIMS using a 13C tracer

J. Fronheiser, K. Matocha, V. Tilak, L. C. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2008
Subtitle of host publicationECSCRM 2008
PublisherTrans Tech Publications Ltd
Pages513-516
Number of pages4
ISBN (Print)9780878493340
DOIs
Publication statusPublished - Jan 1 2009

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Keywords

  • 4H-SiC
  • Carbon defects
  • Carbon-13
  • Interface
  • Oxidation
  • SIMS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Fronheiser, J., Matocha, K., Tilak, V., & Feldman, L. C. (2009). 4H-SiC oxide characterization with SIMS using a 13C tracer. In Silicon Carbide and Related Materials 2008: ECSCRM 2008 (pp. 513-516). (Materials Science Forum; Vol. 615 617). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.615-617.513