4H-SiC oxide characterization with SIMS using a 13C tracer

J. Fronheiser, K. Matocha, V. Tilak, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages513-516
Number of pages4
Volume615 617
DOIs
Publication statusPublished - 2009
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: Sep 7 2008Sep 11 2008

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)02555476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period9/7/089/11/08

Fingerprint

Oxides
tracers
mass spectroscopy
Carbon
Spectroscopy
Ions
oxides
carbon
Carbon Isotopes
Propane
ions
carbon isotopes
propane
markers
Oxide films
oxide films
Isotopes
sensitivity
profiles

Keywords

  • 4H-SiC
  • Carbon defects
  • Carbon-13
  • Interface
  • Oxidation
  • SIMS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Fronheiser, J., Matocha, K., Tilak, V., & Feldman, L. C. (2009). 4H-SiC oxide characterization with SIMS using a 13C tracer. In Materials Science Forum (Vol. 615 617, pp. 513-516). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.513

4H-SiC oxide characterization with SIMS using a 13C tracer. / Fronheiser, J.; Matocha, K.; Tilak, V.; Feldman, Leonard C.

Materials Science Forum. Vol. 615 617 2009. p. 513-516 (Materials Science Forum; Vol. 615 617).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fronheiser, J, Matocha, K, Tilak, V & Feldman, LC 2009, 4H-SiC oxide characterization with SIMS using a 13C tracer. in Materials Science Forum. vol. 615 617, Materials Science Forum, vol. 615 617, pp. 513-516, 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008, Barcelona, Spain, 9/7/08. https://doi.org/10.4028/www.scientific.net/MSF.615-617.513
Fronheiser J, Matocha K, Tilak V, Feldman LC. 4H-SiC oxide characterization with SIMS using a 13C tracer. In Materials Science Forum. Vol. 615 617. 2009. p. 513-516. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.615-617.513
Fronheiser, J. ; Matocha, K. ; Tilak, V. ; Feldman, Leonard C. / 4H-SiC oxide characterization with SIMS using a 13C tracer. Materials Science Forum. Vol. 615 617 2009. pp. 513-516 (Materials Science Forum).
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