4H-SiC oxide characterization with SIMS using a 13C tracer

J. Fronheiser; K. Matocha; V. Tilak; L. C. Feldman

doi:10.4028/www.scientific.net/MSF.615-617.513

4H-SiC oxide characterization with SIMS using a 13C tracer

J. Fronheiser, K. Matocha, V. Tilak, L. C. Feldman

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The SiO₂/SiC interface is characterized for carbon accumulation using the carbon isotope ¹³C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire ¹³C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×10¹¹ cm^-2. The depth resolution of SIMS and natural abundance of ¹³C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×10¹⁴ cm^-2 carbon build up at or near the interface.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2008
Subtitle of host publication	ECSCRM 2008
Pages	513-516
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.615-617.513
Publication status	Published - Dec 1 2009
Event	7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain Duration: Sep 7 2008 → Sep 11 2008

Publication series

Name	Materials Science Forum
Volume	615 617
ISSN (Print)	0255-5476

Other

Other	7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
Country	Spain
City	Barcelona
Period	9/7/08 → 9/11/08

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Keywords

4H-SiC
Carbon defects
Carbon-13
Interface
Oxidation
SIMS

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Fronheiser, J., Matocha, K., Tilak, V., & Feldman, L. C. (2009). 4H-SiC oxide characterization with SIMS using a 13C tracer. In Silicon Carbide and Related Materials 2008: ECSCRM 2008 (pp. 513-516). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.513

Fronheiser, J, Matocha, K, Tilak, V & Feldman, LC 2009, 4H-SiC oxide characterization with SIMS using a 13C tracer. in Silicon Carbide and Related Materials 2008: ECSCRM 2008. Materials Science Forum, vol. 615 617, pp. 513-516, 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008, Barcelona, Spain, 9/7/08. https://doi.org/10.4028/www.scientific.net/MSF.615-617.513

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title = "4H-SiC oxide characterization with SIMS using a 13C tracer",

abstract = "The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.",

keywords = "4H-SiC, Carbon defects, Carbon-13, Interface, Oxidation, SIMS",

author = "J. Fronheiser and K. Matocha and V. Tilak and Feldman, {L. C.}",

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AU - Fronheiser, J.

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AU - Tilak, V.

AU - Feldman, L. C.

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N2 - The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.

AB - The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.

KW - 4H-SiC

KW - Carbon defects

KW - Carbon-13

KW - Interface

KW - Oxidation

KW - SIMS

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Access to Document

10.4028/www.scientific.net/MSF.615-617.513