4H-SiC oxide characterization with SIMS using a 13C tracer

J. Fronheiser; K. Matocha; V. Tilak; L. C. Feldman

doi:10.4028/www.scientific.net/MSF.615-617.513

4H-SiC oxide characterization with SIMS using a 13C tracer

J. Fronheiser, K. Matocha, V. Tilak, L. C. Feldman

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The SiO₂/SiC interface is characterized for carbon accumulation using the carbon isotope ¹³C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire ¹³C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×10¹¹ cm^-2. The depth resolution of SIMS and natural abundance of ¹³C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×10¹⁴ cm^-2 carbon build up at or near the interface.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2008
Subtitle of host publication	ECSCRM 2008
Publisher	Trans Tech Publications Ltd
Pages	513-516
Number of pages	4
ISBN (Print)	9780878493340
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.615-617.513
Publication status	Published - Jan 1 2009

Publication series

Name	Materials Science Forum
Volume	615 617
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Keywords

4H-SiC
Carbon defects
Carbon-13
Interface
Oxidation
SIMS

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Fronheiser, J., Matocha, K., Tilak, V., & Feldman, L. C. (2009). 4H-SiC oxide characterization with SIMS using a 13C tracer. In Silicon Carbide and Related Materials 2008: ECSCRM 2008 (pp. 513-516). (Materials Science Forum; Vol. 615 617). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.615-617.513

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title = "4H-SiC oxide characterization with SIMS using a 13C tracer",

abstract = "The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.",

keywords = "4H-SiC, Carbon defects, Carbon-13, Interface, Oxidation, SIMS",

author = "J. Fronheiser and K. Matocha and V. Tilak and Feldman, {L. C.}",

year = "2009",

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AU - Fronheiser, J.

AU - Matocha, K.

AU - Tilak, V.

AU - Feldman, L. C.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.

AB - The SiO2/SiC interface is characterized for carbon accumulation using the carbon isotope 13C as a marker layer combined with secondary ion mass spectroscopy (SIMS). SiC was epitaxially grown using an isotopically enriched propane source and subsequently oxidized to a thickness required to consume the entire 13C layer. Mass specific depth profiles through the oxide film yield residual carbon concentrations at or below 3×1011 cm-2. The depth resolution of SIMS and natural abundance of 13C in the bulk SiC film limit sensitivity but allow us to set a limit of 2.5×1014 cm-2 carbon build up at or near the interface.

KW - 4H-SiC

KW - Carbon defects

KW - Carbon-13

KW - Interface

KW - Oxidation

KW - SIMS

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