4H-SIC oxynitridation for generation of insulating layers

G. Y. Chung, J. R. Williams, K. McDonald, L. C. Feldman

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Abstract

This paper describes the present state of a nitrogen-based passivation for SiO2 layers on 4H-SiC. Interface state density, oxide breakdown field, channel mobility and gate oxide reliability have been characterized following nitric oxide (NO) passivation anneals. The kinetics of nitrogen incorporation and the quantitative modelling between nitrogen content and interface trap density with NO anneals have also been discussed.

Original languageEnglish
Pages (from-to)S1857-S1871
JournalJournal of Physics Condensed Matter
Volume16
Issue number17
DOIs
Publication statusPublished - May 5 2004

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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