Abstract
This paper describes the present state of a nitrogen-based passivation for SiO2 layers on 4H-SiC. Interface state density, oxide breakdown field, channel mobility and gate oxide reliability have been characterized following nitric oxide (NO) passivation anneals. The kinetics of nitrogen incorporation and the quantitative modelling between nitrogen content and interface trap density with NO anneals have also been discussed.
| Original language | English |
|---|---|
| Journal | Journal of Physics Condensed Matter |
| Volume | 16 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - May 5 2004 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
4H-SIC oxynitridation for generation of insulating layers. / Chung, G. Y.; Williams, J. R.; McDonald, K.; Feldman, Leonard C.
In: Journal of Physics Condensed Matter, Vol. 16, No. 17, 05.05.2004.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 4H-SIC oxynitridation for generation of insulating layers
AU - Chung, G. Y.
AU - Williams, J. R.
AU - McDonald, K.
AU - Feldman, Leonard C
PY - 2004/5/5
Y1 - 2004/5/5
N2 - This paper describes the present state of a nitrogen-based passivation for SiO2 layers on 4H-SiC. Interface state density, oxide breakdown field, channel mobility and gate oxide reliability have been characterized following nitric oxide (NO) passivation anneals. The kinetics of nitrogen incorporation and the quantitative modelling between nitrogen content and interface trap density with NO anneals have also been discussed.
AB - This paper describes the present state of a nitrogen-based passivation for SiO2 layers on 4H-SiC. Interface state density, oxide breakdown field, channel mobility and gate oxide reliability have been characterized following nitric oxide (NO) passivation anneals. The kinetics of nitrogen incorporation and the quantitative modelling between nitrogen content and interface trap density with NO anneals have also been discussed.
UR - http://www.scopus.com/inward/record.url?scp=2442514364&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2442514364&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/16/17/020
DO - 10.1088/0953-8984/16/17/020
M3 - Article
AN - SCOPUS:2442514364
VL - 16
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 17
ER -