4H-SIC oxynitridation for generation of insulating layers

G. Y. Chung, J. R. Williams, K. McDonald, Leonard C Feldman

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

This paper describes the present state of a nitrogen-based passivation for SiO2 layers on 4H-SiC. Interface state density, oxide breakdown field, channel mobility and gate oxide reliability have been characterized following nitric oxide (NO) passivation anneals. The kinetics of nitrogen incorporation and the quantitative modelling between nitrogen content and interface trap density with NO anneals have also been discussed.

Original languageEnglish
JournalJournal of Physics Condensed Matter
Volume16
Issue number17
DOIs
Publication statusPublished - May 5 2004

Fingerprint

structural influence coefficients
Nitrogen
Nitric oxide
nitric oxide
Passivation
nitrogen
Oxides
passivity
Nitric Oxide
oxides
Interface states
breakdown
traps
Kinetics
kinetics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

4H-SIC oxynitridation for generation of insulating layers. / Chung, G. Y.; Williams, J. R.; McDonald, K.; Feldman, Leonard C.

In: Journal of Physics Condensed Matter, Vol. 16, No. 17, 05.05.2004.

Research output: Contribution to journalArticle

Chung, G. Y. ; Williams, J. R. ; McDonald, K. ; Feldman, Leonard C. / 4H-SIC oxynitridation for generation of insulating layers. In: Journal of Physics Condensed Matter. 2004 ; Vol. 16, No. 17.
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