4H-SIC oxynitridation for generation of insulating layers

G. Y. Chung; J. R. Williams; K. McDonald; L. C. Feldman

doi:10.1088/0953-8984/16/17/020

4H-SIC oxynitridation for generation of insulating layers

G. Y. Chung, J. R. Williams, K. McDonald, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article

32 Citations (Scopus)

Abstract

This paper describes the present state of a nitrogen-based passivation for SiO₂ layers on 4H-SiC. Interface state density, oxide breakdown field, channel mobility and gate oxide reliability have been characterized following nitric oxide (NO) passivation anneals. The kinetics of nitrogen incorporation and the quantitative modelling between nitrogen content and interface trap density with NO anneals have also been discussed.

Original language	English
Pages (from-to)	S1857-S1871
Journal	Journal of Physics Condensed Matter
Volume	16
Issue number	17
DOIs	https://doi.org/10.1088/0953-8984/16/17/020
Publication status	Published - May 5 2004

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ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

Cite this

Chung, G. Y., Williams, J. R., McDonald, K., & Feldman, L. C. (2004). 4H-SIC oxynitridation for generation of insulating layers. Journal of Physics Condensed Matter, 16(17), S1857-S1871. https://doi.org/10.1088/0953-8984/16/17/020

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Access to Document

10.1088/0953-8984/16/17/020