4H-SiC surface energy tuning by nitrogen up-take

E. Pitthan, V. P. Amarasinghe, C. Xu, T. Gustafsson, F. C. Stedile, L. C. Feldman

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1 Citation (Scopus)

Abstract

Surface energy modification and surface wettability of 4H silicon carbide (0001) as a function of nitrogen adsorption is reported. The surface wettability is shown to go from primarily hydrophilic to hydrophobic and the surface energy was significantly reduced with increasing nitrogen incorporation. These changes are investigated by x-ray photoelectron spectroscopy and contact angle measurements. The surface energy was quantitatively determined by the Fowkes model and interpreted primarily in terms of the variation of the surface chemistry with nitrogen coverage. Variable control of SiC surface energies with a simple and controllable atomic additive such as nitrogen that is inert to etching, stable against time, and also effective in electrical passivation, can provide new opportunities for SiC biomedical applications, where surface wetting plays an important role in the interaction with the biological interfaces.

Original languageEnglish
Pages (from-to)192-197
Number of pages6
JournalApplied Surface Science
Volume402
DOIs
Publication statusPublished - Apr 30 2017

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Keywords

  • N plasma exposure
  • NH annealing
  • NO annealing
  • SiC
  • Surface energy
  • Wettability

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Pitthan, E., Amarasinghe, V. P., Xu, C., Gustafsson, T., Stedile, F. C., & Feldman, L. C. (2017). 4H-SiC surface energy tuning by nitrogen up-take. Applied Surface Science, 402, 192-197. https://doi.org/10.1016/j.apsusc.2017.01.073