570 mV photovoltage, stabilized n-Si/CoOx heterojunction photoanodes fabricated using atomic layer deposition

Xinghao Zhou, Rui Liu, Ke Sun, Kimberly M. Papadantonakis, Bruce S. Brunschwig, Nathan S Lewis

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Heterojunction photoanodes, consisting of n-type crystalline Si(100) substrates coated with a thin ∼50 nm film of cobalt oxide fabricated using atomic-layer deposition (ALD), exhibited photocurrent-onset potentials of -205 ± 20 mV relative to the formal potential for the oxygen-evolution reaction (OER), ideal regenerative solar-to-O2(g) conversion efficiencies of 1.42 ± 0.20%, and operated continuously for over 100 days (∼2500 h) in 1.0 M KOH(aq) under simulated solar illumination. The ALD CoOx thin film: (i) formed a heterojunction with the n-Si(100) that provided a photovoltage of 575 mV under 1 Sun of simulated solar illumination; (ii) stabilized Si photoanodes that are otherwise unstable when operated in aqueous alkaline electrolytes; and, (iii) catalyzed the oxidation of water, thereby reducing the kinetic overpotential required for the reaction and increasing the overall efficiency relative to electrodes that do not have an inherently electrocatalytic coating. The process provides a simple, effective method for enabling the use of planar n-Si(100) substrates as efficient and durable photoanodes in fully integrated, photovoltaic-biased solar fuels generators.

Original languageEnglish
Pages (from-to)892-897
Number of pages6
JournalEnergy and Environmental Science
Volume9
Issue number3
DOIs
Publication statusPublished - Mar 1 2016

Fingerprint

Atomic layer deposition
Heterojunctions
Lighting
substrate
Substrates
Photocurrents
cobalt
Sun
electrolyte
Electrolytes
Conversion efficiency
Cobalt
coating
electrode
oxide
Oxygen
Crystalline materials
oxidation
Thin films
kinetics

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Environmental Chemistry
  • Pollution
  • Nuclear Energy and Engineering

Cite this

570 mV photovoltage, stabilized n-Si/CoOx heterojunction photoanodes fabricated using atomic layer deposition. / Zhou, Xinghao; Liu, Rui; Sun, Ke; Papadantonakis, Kimberly M.; Brunschwig, Bruce S.; Lewis, Nathan S.

In: Energy and Environmental Science, Vol. 9, No. 3, 01.03.2016, p. 892-897.

Research output: Contribution to journalArticle

Zhou, Xinghao ; Liu, Rui ; Sun, Ke ; Papadantonakis, Kimberly M. ; Brunschwig, Bruce S. ; Lewis, Nathan S. / 570 mV photovoltage, stabilized n-Si/CoOx heterojunction photoanodes fabricated using atomic layer deposition. In: Energy and Environmental Science. 2016 ; Vol. 9, No. 3. pp. 892-897.
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