630-mv OPEN CIRCUIT VOLTAGE, 12% EFFICIENT n-Si LIQUID JUNCTION.

Mary L. Rosenbluth, Charles M. Lieber, Nathan S Lewis

Research output: Contribution to journalArticle

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Abstract

The authors report the first experimental observation of a semiconductor/liquid junction whose open circuit voltage V//o//c is controlled by bulk diffusion/recombination processes. Variation in temperature, minority-carrier diffusion length, and/or in majority-carrier concentration produces changes in the V//o//c of the n-Si/CH//3OH interface in accord with bulk recombination/diffusion theory. Under AM2 irradiation conditions, the extrapolated intercept at 0 K of V//o//c vs T plots yields activation energies for the dominant recombination process of 1. 1-1. 2 ev, in accord with the 1. 12-ev band gap of Si. A crucial factor in achieving optimum performance of the n-Si/CH//3OH interface is assigned to photoelectrochemical oxide formation, which passivates surface recombination sites at the n-Si/CH//3OH interface and minimizes deleterious effects of pinning of the Fermi level at the Si/CH//3OH junction. Controlled Si oxide growth, combined with optimization of bulk crystal parameters in accord with diffusion theory, is found to yield improved photoelectrode output parameters, with 12. 0 plus or minus 1. 5% AM2 efficiencies and AM1 V//o//c values of 632-640 mv for 0. 2- OMEGA cm Si materials.

Original languageEnglish
Pages (from-to)423-425
Number of pages3
JournalApplied Physics Letters
Volume45
Issue number4
DOIs
Publication statusPublished - Jan 1 1984

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open circuit voltage
methylidyne
diffusion theory
majority carriers
oxides
diffusion length
minority carriers
plots
activation energy
optimization
irradiation
output
liquids
crystals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

630-mv OPEN CIRCUIT VOLTAGE, 12% EFFICIENT n-Si LIQUID JUNCTION. / Rosenbluth, Mary L.; Lieber, Charles M.; Lewis, Nathan S.

In: Applied Physics Letters, Vol. 45, No. 4, 01.01.1984, p. 423-425.

Research output: Contribution to journalArticle

Rosenbluth, Mary L. ; Lieber, Charles M. ; Lewis, Nathan S. / 630-mv OPEN CIRCUIT VOLTAGE, 12% EFFICIENT n-Si LIQUID JUNCTION. In: Applied Physics Letters. 1984 ; Vol. 45, No. 4. pp. 423-425.
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