630 mV OPEN CIRCUIT VOLTAGE, 12% EFFICIENT n-Si/LIQUID JUNCTION.

Mary L. Rosenbluth, Charles M. Lieber, Nathan S Lewis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The authors report measurements of the variation in open circuit voltages, V//o//c, at the n-Si/CH//3OH junction with changes in majority carrier concentration, in minority carrier diffusion length, and in cell temperature. These studies represent the first experimental demonstration with any semiconductor/liquid junction that the bulk recombination limit on V//o//c can be attained in an operating semiconductor/liquid cell.

Original languageEnglish
Title of host publicationElectrochemical Society Extended Abstracts
PublisherElectrochemical Soc
Pages821
Number of pages1
Volume85-1
Publication statusPublished - 1985

ASJC Scopus subject areas

  • Engineering(all)

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    Rosenbluth, M. L., Lieber, C. M., & Lewis, N. S. (1985). 630 mV OPEN CIRCUIT VOLTAGE, 12% EFFICIENT n-Si/LIQUID JUNCTION. In Electrochemical Society Extended Abstracts (Vol. 85-1, pp. 821). Electrochemical Soc.