The authors report measurements of the variation in open circuit voltages, V//o//c, at the n-Si/CH//3OH junction with changes in majority carrier concentration, in minority carrier diffusion length, and in cell temperature. These studies represent the first experimental demonstration with any semiconductor/liquid junction that the bulk recombination limit on V//o//c can be attained in an operating semiconductor/liquid cell.
|Title of host publication||Electrochemical Society Extended Abstracts|
|Number of pages||1|
|Publication status||Published - 1985|
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