7. 2% EFFICIENT POLYCRYSTALLINE SILICON PHOTOELECTRODE.

George W. Cogan, Chris M. Gronet, James F. Gibbons, Nathan S Lewis

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

After etching, n-type cast polycrystalline silicon photoanodes immersed in a solution of methanol and a substituted ferrocene reagent exhibit photoelectrode efficiencies of 7. 2% plus or minus 0. 7% under simulated AM2 illumination. Scanning laser spot data indicate that the grain boundaries are active; however, the semiconductor/liquid contact does not display the severe shunting effects which are observed at a polycrystalline Si/Pt Schottky barrier. Evidence for an interfacial oxide on the operating polycrystalline Si photoanode is presented. Some losses in short circuit current can be ascribed to bulk semiconductor properties; however, despite these losses, photoanodes fabricated from polycrystalline substrates exhibit efficiencies comparable to those of single-crystal material. Two major conclusions of our studies are that improved photoelectrode behavior in the polycrystalline silcion/methanol system will primarily result from changes in bulk electrode properties and from grain boundary passivation, and that Fermi level pinning by surface states does not prevent the design of efficient silicon-based liquid junctions.

Original languageEnglish
Pages (from-to)539-541
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number5
DOIs
Publication statusPublished - Mar 1 1984

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methyl alcohol
grain boundaries
silicon
short circuit currents
liquids
passivity
reagents
casts
illumination
etching
scanning
electrodes
oxides
single crystals
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

7. 2% EFFICIENT POLYCRYSTALLINE SILICON PHOTOELECTRODE. / Cogan, George W.; Gronet, Chris M.; Gibbons, James F.; Lewis, Nathan S.

In: Applied Physics Letters, Vol. 44, No. 5, 01.03.1984, p. 539-541.

Research output: Contribution to journalArticle

Cogan, George W. ; Gronet, Chris M. ; Gibbons, James F. ; Lewis, Nathan S. / 7. 2% EFFICIENT POLYCRYSTALLINE SILICON PHOTOELECTRODE. In: Applied Physics Letters. 1984 ; Vol. 44, No. 5. pp. 539-541.
@article{2ba2d92d6be3418aac6726460b9a9b52,
title = "7. 2{\%} EFFICIENT POLYCRYSTALLINE SILICON PHOTOELECTRODE.",
abstract = "After etching, n-type cast polycrystalline silicon photoanodes immersed in a solution of methanol and a substituted ferrocene reagent exhibit photoelectrode efficiencies of 7. 2{\%} plus or minus 0. 7{\%} under simulated AM2 illumination. Scanning laser spot data indicate that the grain boundaries are active; however, the semiconductor/liquid contact does not display the severe shunting effects which are observed at a polycrystalline Si/Pt Schottky barrier. Evidence for an interfacial oxide on the operating polycrystalline Si photoanode is presented. Some losses in short circuit current can be ascribed to bulk semiconductor properties; however, despite these losses, photoanodes fabricated from polycrystalline substrates exhibit efficiencies comparable to those of single-crystal material. Two major conclusions of our studies are that improved photoelectrode behavior in the polycrystalline silcion/methanol system will primarily result from changes in bulk electrode properties and from grain boundary passivation, and that Fermi level pinning by surface states does not prevent the design of efficient silicon-based liquid junctions.",
author = "Cogan, {George W.} and Gronet, {Chris M.} and Gibbons, {James F.} and Lewis, {Nathan S}",
year = "1984",
month = "3",
day = "1",
doi = "10.1063/1.94831",
language = "English",
volume = "44",
pages = "539--541",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - 7. 2% EFFICIENT POLYCRYSTALLINE SILICON PHOTOELECTRODE.

AU - Cogan, George W.

AU - Gronet, Chris M.

AU - Gibbons, James F.

AU - Lewis, Nathan S

PY - 1984/3/1

Y1 - 1984/3/1

N2 - After etching, n-type cast polycrystalline silicon photoanodes immersed in a solution of methanol and a substituted ferrocene reagent exhibit photoelectrode efficiencies of 7. 2% plus or minus 0. 7% under simulated AM2 illumination. Scanning laser spot data indicate that the grain boundaries are active; however, the semiconductor/liquid contact does not display the severe shunting effects which are observed at a polycrystalline Si/Pt Schottky barrier. Evidence for an interfacial oxide on the operating polycrystalline Si photoanode is presented. Some losses in short circuit current can be ascribed to bulk semiconductor properties; however, despite these losses, photoanodes fabricated from polycrystalline substrates exhibit efficiencies comparable to those of single-crystal material. Two major conclusions of our studies are that improved photoelectrode behavior in the polycrystalline silcion/methanol system will primarily result from changes in bulk electrode properties and from grain boundary passivation, and that Fermi level pinning by surface states does not prevent the design of efficient silicon-based liquid junctions.

AB - After etching, n-type cast polycrystalline silicon photoanodes immersed in a solution of methanol and a substituted ferrocene reagent exhibit photoelectrode efficiencies of 7. 2% plus or minus 0. 7% under simulated AM2 illumination. Scanning laser spot data indicate that the grain boundaries are active; however, the semiconductor/liquid contact does not display the severe shunting effects which are observed at a polycrystalline Si/Pt Schottky barrier. Evidence for an interfacial oxide on the operating polycrystalline Si photoanode is presented. Some losses in short circuit current can be ascribed to bulk semiconductor properties; however, despite these losses, photoanodes fabricated from polycrystalline substrates exhibit efficiencies comparable to those of single-crystal material. Two major conclusions of our studies are that improved photoelectrode behavior in the polycrystalline silcion/methanol system will primarily result from changes in bulk electrode properties and from grain boundary passivation, and that Fermi level pinning by surface states does not prevent the design of efficient silicon-based liquid junctions.

UR - http://www.scopus.com/inward/record.url?scp=0021387298&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021387298&partnerID=8YFLogxK

U2 - 10.1063/1.94831

DO - 10.1063/1.94831

M3 - Article

AN - SCOPUS:0021387298

VL - 44

SP - 539

EP - 541

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -