7×7 reconstruction of Ge(111) surfaces under compressive strain

H. J. Gossmann, J. C. Bean, Leonard C Feldman, E. G. McRae, I. K. Robinson

Research output: Contribution to journalArticle

112 Citations (Scopus)

Abstract

We have discovered a correlation between lateral compressive strain in an elemental material and the reconstructed state of its surface. We studied continuous films of pure Ge epitaxially grown on Si(111) substrates. The in-plane lattice parameter varies continuously with film thickness while the surface symmetry changes from c2×8 to 7×7. The results indicate an important role of lateral compressive stress in the 7×7 reconstruction.

Original languageEnglish
Pages (from-to)1106-1109
Number of pages4
JournalPhysical Review Letters
Volume55
Issue number10
DOIs
Publication statusPublished - 1985

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lattice parameters
film thickness
symmetry

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

7×7 reconstruction of Ge(111) surfaces under compressive strain. / Gossmann, H. J.; Bean, J. C.; Feldman, Leonard C; McRae, E. G.; Robinson, I. K.

In: Physical Review Letters, Vol. 55, No. 10, 1985, p. 1106-1109.

Research output: Contribution to journalArticle

Gossmann, H. J. ; Bean, J. C. ; Feldman, Leonard C ; McRae, E. G. ; Robinson, I. K. / 7×7 reconstruction of Ge(111) surfaces under compressive strain. In: Physical Review Letters. 1985 ; Vol. 55, No. 10. pp. 1106-1109.
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