Abstract
We have discovered a correlation between lateral compressive strain in an elemental material and the reconstructed state of its surface. We studied continuous films of pure Ge epitaxially grown on Si(111) substrates. The in-plane lattice parameter varies continuously with film thickness while the surface symmetry changes from c2×8 to 7×7. The results indicate an important role of lateral compressive stress in the 7×7 reconstruction.
Original language | English |
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Pages (from-to) | 1106-1109 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 55 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1985 |
ASJC Scopus subject areas
- Physics and Astronomy(all)