7×7 reconstruction of Ge(111) surfaces under compressive strain

H. J. Gossmann, J. C. Bean, Leonard C Feldman, E. G. McRae, I. K. Robinson

Research output: Contribution to journal › Article

112 Citations (Scopus)

Abstract

We have discovered a correlation between lateral compressive strain in an elemental material and the reconstructed state of its surface. We studied continuous films of pure Ge epitaxially grown on Si(111) substrates. The in-plane lattice parameter varies continuously with film thickness while the surface symmetry changes from c2×8 to 7×7. The results indicate an important role of lateral compressive stress in the 7×7 reconstruction.

Original languageEnglish
Pages (from-to)1106-1109
Number of pages4
JournalPhysical Review Letters
Volume55
Issue number10
DOIs
Publication statusPublished - 1985

Fingerprint

lattice parameters
film thickness
symmetry

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

7×7 reconstruction of Ge(111) surfaces under compressive strain. / Gossmann, H. J.; Bean, J. C.; Feldman, Leonard C; McRae, E. G.; Robinson, I. K.

In: Physical Review Letters, Vol. 55, No. 10, 1985, p. 1106-1109.

Research output: Contribution to journal › Article

Gossmann, HJ, Bean, JC, Feldman, LC, McRae, EG & Robinson, IK 1985, '7×7 reconstruction of Ge(111) surfaces under compressive strain', Physical Review Letters, vol. 55, no. 10, pp. 1106-1109. https://doi.org/10.1103/PhysRevLett.55.1106
Gossmann HJ, Bean JC, Feldman LC, McRae EG, Robinson IK. 7×7 reconstruction of Ge(111) surfaces under compressive strain. Physical Review Letters. 1985;55(10):1106-1109. https://doi.org/10.1103/PhysRevLett.55.1106
Gossmann, H. J. ; Bean, J. C. ; Feldman, Leonard C ; McRae, E. G. ; Robinson, I. K. / 7×7 reconstruction of Ge(111) surfaces under compressive strain. In: Physical Review Letters. 1985 ; Vol. 55, No. 10. pp. 1106-1109.
@article{254d73305d3541bbaaa6ec64880d9e28,
title = "7×7 reconstruction of Ge(111) surfaces under compressive strain",
abstract = "We have discovered a correlation between lateral compressive strain in an elemental material and the reconstructed state of its surface. We studied continuous films of pure Ge epitaxially grown on Si(111) substrates. The in-plane lattice parameter varies continuously with film thickness while the surface symmetry changes from c2×8 to 7×7. The results indicate an important role of lateral compressive stress in the 7×7 reconstruction.",
author = "Gossmann, {H. J.} and Bean, {J. C.} and Feldman, {Leonard C} and McRae, {E. G.} and Robinson, {I. K.}",
year = "1985",
doi = "10.1103/PhysRevLett.55.1106",
language = "English",
volume = "55",
pages = "1106--1109",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "10",

}

TY - JOUR

T1 - 7×7 reconstruction of Ge(111) surfaces under compressive strain

AU - Gossmann, H. J.

AU - Bean, J. C.

AU - Feldman, Leonard C

AU - McRae, E. G.

AU - Robinson, I. K.

PY - 1985

Y1 - 1985

N2 - We have discovered a correlation between lateral compressive strain in an elemental material and the reconstructed state of its surface. We studied continuous films of pure Ge epitaxially grown on Si(111) substrates. The in-plane lattice parameter varies continuously with film thickness while the surface symmetry changes from c2×8 to 7×7. The results indicate an important role of lateral compressive stress in the 7×7 reconstruction.

AB - We have discovered a correlation between lateral compressive strain in an elemental material and the reconstructed state of its surface. We studied continuous films of pure Ge epitaxially grown on Si(111) substrates. The in-plane lattice parameter varies continuously with film thickness while the surface symmetry changes from c2×8 to 7×7. The results indicate an important role of lateral compressive stress in the 7×7 reconstruction.

UR - http://www.scopus.com/inward/record.url?scp=3342985199&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3342985199&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.55.1106

DO - 10.1103/PhysRevLett.55.1106

M3 - Article

AN - SCOPUS:3342985199

VL - 55

SP - 1106

EP - 1109

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 10

ER -

Access to Document