7×7 reconstruction of Ge(111) surfaces under compressive strain

H. J. Gossmann; J. C. Bean; Leonard C Feldman; E. G. McRae; I. K. Robinson

doi:10.1103/PhysRevLett.55.1106

7×7 reconstruction of Ge(111) surfaces under compressive strain

H. J. Gossmann, J. C. Bean, Leonard C Feldman, E. G. McRae, I. K. Robinson

Rutgers University

Research output: Contribution to journal › Article

112 Citations (Scopus)

Abstract

We have discovered a correlation between lateral compressive strain in an elemental material and the reconstructed state of its surface. We studied continuous films of pure Ge epitaxially grown on Si(111) substrates. The in-plane lattice parameter varies continuously with film thickness while the surface symmetry changes from c2×8 to 7×7. The results indicate an important role of lateral compressive stress in the 7×7 reconstruction.

Original language	English
Pages (from-to)	1106-1109
Number of pages	4
Journal	Physical Review Letters
Volume	55
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevLett.55.1106
Publication status	Published - 1985

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Gossmann, H. J., Bean, J. C., Feldman, L. C., McRae, E. G., & Robinson, I. K. (1985). 7×7 reconstruction of Ge(111) surfaces under compressive strain. Physical Review Letters, 55(10), 1106-1109. https://doi.org/10.1103/PhysRevLett.55.1106

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Access to Document

10.1103/PhysRevLett.55.1106