80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

L. Nougaret, H. Happy, G. Dambrine, V. Derycke, J. P. Bourgoin, A. A. Green, Mark C Hersam

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143 Citations (Scopus)

Abstract

This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

Original languageEnglish
Article number243505
JournalApplied Physics Letters
Volume94
Issue number24
DOIs
Publication statusPublished - 2009

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purity
field effect transistors
carbon nanotubes
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes. / Nougaret, L.; Happy, H.; Dambrine, G.; Derycke, V.; Bourgoin, J. P.; Green, A. A.; Hersam, Mark C.

In: Applied Physics Letters, Vol. 94, No. 24, 243505, 2009.

Research output: Contribution to journalArticle

Nougaret, L. ; Happy, H. ; Dambrine, G. ; Derycke, V. ; Bourgoin, J. P. ; Green, A. A. ; Hersam, Mark C. / 80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes. In: Applied Physics Letters. 2009 ; Vol. 94, No. 24.
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