A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe 16S20]8- layer and reduced thermal conductivity

Min Wu; Jessica Rhee; Thomas J. Emge; Hongbin Yao; Jen Hau Cheng; Suraj Thiagarajan; Mark Croft; Ronggui Yang; Jing Li

doi:10.1039/b920118a

A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe ₁₆S₂₀]^8- layer and reduced thermal conductivity

Min Wu, Jessica Rhee, Thomas J. Emge, Hongbin Yao, Jen Hau Cheng, Suraj Thiagarajan, Mark Croft, Ronggui Yang, Jing Li

Rutgers University

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

A low band gap iron sulfide hybrid semiconductor with unique layered structure and unusual iron coordination exhibits significantly reduced thermal conductivity.

Original language	English
Pages (from-to)	1649-1651
Number of pages	3
Journal	Chemical Communications
Volume	46
Issue number	10
DOIs	https://doi.org/10.1039/b920118a
Publication status	Published - 2010

ASJC Scopus subject areas

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1039/b920118a

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Wu, M., Rhee, J., Emge, T. J., Yao, H., Cheng, J. H., Thiagarajan, S., Croft, M., Yang, R., & Li, J. (2010). A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe ₁₆S₂₀]^8- layer and reduced thermal conductivity. Chemical Communications, 46(10), 1649-1651. https://doi.org/10.1039/b920118a

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AU - Yang, Ronggui

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