A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe 16S20]8- layer and reduced thermal conductivity

Min Wu, Jessica Rhee, Thomas J. Emge, Hongbin Yao, Jen Hau Cheng, Suraj Thiagarajan, Mark Croft, Ronggui Yang, Jing Li

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

A low band gap iron sulfide hybrid semiconductor with unique layered structure and unusual iron coordination exhibits significantly reduced thermal conductivity.

Original languageEnglish
Pages (from-to)1649-1651
Number of pages3
JournalChemical Communications
Volume46
Issue number10
DOIs
Publication statusPublished - 2010

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Sulfides
Thermal conductivity
Energy gap
Iron
Semiconductor materials

ASJC Scopus subject areas

  • Metals and Alloys
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Catalysis
  • Chemistry(all)

Cite this

A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe 16S20]8- layer and reduced thermal conductivity. / Wu, Min; Rhee, Jessica; Emge, Thomas J.; Yao, Hongbin; Cheng, Jen Hau; Thiagarajan, Suraj; Croft, Mark; Yang, Ronggui; Li, Jing.

In: Chemical Communications, Vol. 46, No. 10, 2010, p. 1649-1651.

Research output: Contribution to journal › Article

Wu, M, Rhee, J, Emge, TJ, Yao, H, Cheng, JH, Thiagarajan, S, Croft, M, Yang, R & Li, J 2010, 'A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe 16S20]8- layer and reduced thermal conductivity', Chemical Communications, vol. 46, no. 10, pp. 1649-1651. https://doi.org/10.1039/b920118a
Wu M, Rhee J, Emge TJ, Yao H, Cheng JH, Thiagarajan S et al. A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe 16S20]8- layer and reduced thermal conductivity. Chemical Communications. 2010;46(10):1649-1651. https://doi.org/10.1039/b920118a
Wu, Min ; Rhee, Jessica ; Emge, Thomas J. ; Yao, Hongbin ; Cheng, Jen Hau ; Thiagarajan, Suraj ; Croft, Mark ; Yang, Ronggui ; Li, Jing. / A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe 16S20]8- layer and reduced thermal conductivity. In: Chemical Communications. 2010 ; Vol. 46, No. 10. pp. 1649-1651.
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