A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe 16S20]8- layer and reduced thermal conductivity

Min Wu, Jessica Rhee, Thomas J. Emge, Hongbin Yao, Jen Hau Cheng, Suraj Thiagarajan, Mark Croft, Ronggui Yang, Jing Li

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A low band gap iron sulfide hybrid semiconductor with unique layered structure and unusual iron coordination exhibits significantly reduced thermal conductivity.

Original languageEnglish
Pages (from-to)1649-1651
Number of pages3
JournalChemical Communications
Volume46
Issue number10
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Wu, M., Rhee, J., Emge, T. J., Yao, H., Cheng, J. H., Thiagarajan, S., Croft, M., Yang, R., & Li, J. (2010). A low band gap iron sulfide hybrid semiconductor with unique 2D [Fe 16S20]8- layer and reduced thermal conductivity. Chemical Communications, 46(10), 1649-1651. https://doi.org/10.1039/b920118a