TY - JOUR
T1 - A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride
AU - Chi, Hang
AU - Tan, Gangjian
AU - Kanatzidis, Mercouri G.
AU - Li, Qiang
AU - Uher, Ctirad
PY - 2016/5/2
Y1 - 2016/5/2
N2 - SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ∼4 μB (Bohr magneton) of magnetic moment to Sn1- xMnxTe. The Curie temperature TC reaches ∼14 K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient RH and a favorably enhanced Seebeck coefficient S at the same time. With the thermal conductivity κ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.
AB - SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ∼4 μB (Bohr magneton) of magnetic moment to Sn1- xMnxTe. The Curie temperature TC reaches ∼14 K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient RH and a favorably enhanced Seebeck coefficient S at the same time. With the thermal conductivity κ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.
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U2 - 10.1063/1.4948523
DO - 10.1063/1.4948523
M3 - Article
AN - SCOPUS:84968845903
VL - 108
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
M1 - 182101
ER -