A Model for Silicon Self‐Diffusion in Silicon Carbide: Anti‐Site Defect Motion

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single‐crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti‐site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.

Original languageEnglish
Pages (from-to)C‐33-C‐35
JournalJournal of the American Ceramic Society
Volume69
Issue number2
DOIs
Publication statusPublished - 1986

Fingerprint

Silicon
Silicon carbide
Defects
Carbon
Boron
Vacancies
Activation energy
Doping (additives)
silicon carbide

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

A Model for Silicon Self‐Diffusion in Silicon Carbide : Anti‐Site Defect Motion. / Birnie, Dunbar P.

In: Journal of the American Ceramic Society, Vol. 69, No. 2, 1986, p. C‐33-C‐35.

Research output: Contribution to journalArticle

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