Abstract
A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single‐crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti‐site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.
| Original language | English |
|---|---|
| Pages (from-to) | C‐33-C‐35 |
| Journal | Journal of the American Ceramic Society |
| Volume | 69 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1986 |
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ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry
Cite this
A Model for Silicon Self‐Diffusion in Silicon Carbide : Anti‐Site Defect Motion. / Birnie, Dunbar P.
In: Journal of the American Ceramic Society, Vol. 69, No. 2, 1986, p. C‐33-C‐35.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A Model for Silicon Self‐Diffusion in Silicon Carbide
T2 - Anti‐Site Defect Motion
AU - Birnie, Dunbar P
PY - 1986
Y1 - 1986
N2 - A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single‐crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti‐site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.
AB - A simple defect interaction model was developed that explains the identical activation energies observed for carbon and silicon diffusion in single‐crystal silicon carbide. In accord with experimental measurement of nonstoichiometry, the model requires a substantial concentration of silicon anti‐site defects. The diffusion of silicon is limited by the motion of these defects; this is suggested to occur by their interaction with carbon vacancies. The model predicts that boron doping will increase both carbon and silicon diffusion coefficients.
UR - http://www.scopus.com/inward/record.url?scp=84987310045&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84987310045&partnerID=8YFLogxK
U2 - 10.1111/j.1151-2916.1986.tb04731.x
DO - 10.1111/j.1151-2916.1986.tb04731.x
M3 - Article
VL - 69
SP - C‐33-C‐35
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 2
ER -