A new method of fabricating gallium arsenide MOS devices

Robert P. H. Chang, J. J. Coleman

Research output: Contribution to journal › Article

23 Citations (Scopus)

Abstract

A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).

Original languageEnglish
Pages (from-to)332-333
Number of pages2
JournalApplied Physics Letters
Volume32
Issue number5
DOIs
Publication statusPublished - 1978

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gallium
oxides
electrical faults
arsenic
aluminum oxides
electrical properties

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A new method of fabricating gallium arsenide MOS devices. / Chang, Robert P. H.; Coleman, J. J.

In: Applied Physics Letters, Vol. 32, No. 5, 1978, p. 332-333.

Research output: Contribution to journal › Article

Chang, RPH & Coleman, JJ 1978, 'A new method of fabricating gallium arsenide MOS devices', Applied Physics Letters, vol. 32, no. 5, pp. 332-333. https://doi.org/10.1063/1.90040
Chang RPH, Coleman JJ. A new method of fabricating gallium arsenide MOS devices. Applied Physics Letters. 1978;32(5):332-333. https://doi.org/10.1063/1.90040
Chang, Robert P. H. ; Coleman, J. J. / A new method of fabricating gallium arsenide MOS devices. In: Applied Physics Letters. 1978 ; Vol. 32, No. 5. pp. 332-333.
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