Abstract
A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).
Original language | English |
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Pages (from-to) | 332-333 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 32 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1978 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)