A new method of fabricating gallium arsenide MOS devices

Robert P. H. Chang; J. J. Coleman

doi:10.1063/1.90040

A new method of fabricating gallium arsenide MOS devices

Robert P. H. Chang, J. J. Coleman

Northwestern University

Research output: Contribution to journal › Article

23 Citations (Scopus)

Abstract

A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×10⁶ V/cm) and have low surface-state densities (≈5×10¹⁰ cm^-2).

Original language	English
Pages (from-to)	332-333
Number of pages	2
Journal	Applied Physics Letters
Volume	32
Issue number	5
DOIs	https://doi.org/10.1063/1.90040
Publication status	Published - 1978

Fingerprint

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Chang, R. P. H., & Coleman, J. J. (1978). A new method of fabricating gallium arsenide MOS devices. Applied Physics Letters, 32(5), 332-333. https://doi.org/10.1063/1.90040

@article{a0300fc0efbb48e5806c260b6fac9b29,

title = "A new method of fabricating gallium arsenide MOS devices",

abstract = "A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).",

author = "Chang, {Robert P. H.} and Coleman, {J. J.}",

year = "1978",

doi = "10.1063/1.90040",

language = "English",

volume = "32",

pages = "332--333",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - A new method of fabricating gallium arsenide MOS devices

AU - Chang, Robert P. H.

AU - Coleman, J. J.

PY - 1978

Y1 - 1978

N2 - A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).

AB - A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).

UR - http://www.scopus.com/inward/record.url?scp=0348185767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0348185767&partnerID=8YFLogxK

U2 - 10.1063/1.90040

DO - 10.1063/1.90040

M3 - Article

AN - SCOPUS:0348185767

VL - 32

SP - 332

EP - 333

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -

Access to Document

10.1063/1.90040