A new method of fabricating gallium arsenide MOS devices

Robert P. H. Chang, J. J. Coleman

Research output: Contribution to journal › Article

23 Citations (Scopus)

Abstract

A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).

Original languageEnglish
Pages (from-to)332-333
Number of pages2
JournalApplied Physics Letters
Volume32
Issue number5
DOIs
Publication statusPublished - 1978

Fingerprint

gallium
oxides
electrical faults
arsenic
aluminum oxides
electrical properties

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A new method of fabricating gallium arsenide MOS devices. / Chang, Robert P. H.; Coleman, J. J.

In: Applied Physics Letters, Vol. 32, No. 5, 1978, p. 332-333.

Research output: Contribution to journal › Article

Chang, RPH & Coleman, JJ 1978, 'A new method of fabricating gallium arsenide MOS devices', Applied Physics Letters, vol. 32, no. 5, pp. 332-333. https://doi.org/10.1063/1.90040
Chang RPH, Coleman JJ. A new method of fabricating gallium arsenide MOS devices. Applied Physics Letters. 1978;32(5):332-333. https://doi.org/10.1063/1.90040
Chang, Robert P. H. ; Coleman, J. J. / A new method of fabricating gallium arsenide MOS devices. In: Applied Physics Letters. 1978 ; Vol. 32, No. 5. pp. 332-333.
@article{a0300fc0efbb48e5806c260b6fac9b29,
title = "A new method of fabricating gallium arsenide MOS devices",
abstract = "A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).",
author = "Chang, {Robert P. H.} and Coleman, {J. J.}",
year = "1978",
doi = "10.1063/1.90040",
language = "English",
volume = "32",
pages = "332--333",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - A new method of fabricating gallium arsenide MOS devices

AU - Chang, Robert P. H.

AU - Coleman, J. J.

PY - 1978

Y1 - 1978

N2 - A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).

AB - A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).

UR - http://www.scopus.com/inward/record.url?scp=0348185767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0348185767&partnerID=8YFLogxK

U2 - 10.1063/1.90040

DO - 10.1063/1.90040

M3 - Article

AN - SCOPUS:0348185767

VL - 32

SP - 332

EP - 333

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -

Access to Document