A new method of fabricating gallium arsenide MOS devices

R. P.H. Chang; J. J. Coleman

doi:10.1063/1.90040

A new method of fabricating gallium arsenide MOS devices

R. P.H. Chang, J. J. Coleman

Northwestern University

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×10⁶ V/cm) and have low surface-state densities (≈5×10¹⁰ cm^-2).

Original language	English
Pages (from-to)	332-333
Number of pages	2
Journal	Applied Physics Letters
Volume	32
Issue number	5
DOIs	https://doi.org/10.1063/1.90040
Publication status	Published - 1978

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface-state densities (≈5×1010 cm-2).",

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A new method of fabricating gallium arsenide MOS devices

Abstract

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