Abstract
In this paper, we report a new method to fabricate oxynitride/oxide gate dielectrics for MOS devices. This method utilizes a thin layer of oxynitride as a membrane for controlled diffusion of O2 and oxidation of Si at high temperatures with low thermal budget. MOS devices made with these oxynitride/oxide structures have interface properties like thermal SiO2 with a structure resistant to boron diffusion.
Original language | English |
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Pages (from-to) | 69-72 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 22 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Aug 1993 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering