Abstract
In this paper, we report a new method to fabricate oxynitride/oxide gate dielectrics for MOS devices. This method utilizes a thin layer of oxynitride as a membrane for controlled diffusion of O2 and oxidation of Si at high temperatures with low thermal budget. MOS devices made with these oxynitride/oxide structures have interface properties like thermal SiO2 with a structure resistant to boron diffusion.
| Original language | English |
|---|---|
| Pages (from-to) | 69-72 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 22 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Aug 1993 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Fingerprint Dive into the research topics of 'A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices'. Together they form a unique fingerprint.
Cite this
Manchanda, L., Weber, G. R., Kim, Y. O., Feldman, L. C., Moryia, N., Weir, B. E., Kistler, R. C., Green, M. L., & Brasen, D. (1993). A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices. Microelectronic Engineering, 22(1-4), 69-72. https://doi.org/10.1016/0167-9317(93)90132-O