A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices

L. Manchanda, G. R. Weber, Y. O. Kim, Leonard C Feldman, N. Moryia, B. E. Weir, R. C. Kistler, M. L. Green, D. Brasen

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

In this paper, we report a new method to fabricate oxynitride/oxide gate dielectrics for MOS devices. This method utilizes a thin layer of oxynitride as a membrane for controlled diffusion of O2 and oxidation of Si at high temperatures with low thermal budget. MOS devices made with these oxynitride/oxide structures have interface properties like thermal SiO2 with a structure resistant to boron diffusion.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalMicroelectronic Engineering
Volume22
Issue number1-4
DOIs
Publication statusPublished - 1993

Fingerprint

MOS devices
oxynitrides
Gate dielectrics
Oxides
Boron
oxides
Membranes
budgets
Oxidation
boron
thermodynamic properties
membranes
oxidation
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices. / Manchanda, L.; Weber, G. R.; Kim, Y. O.; Feldman, Leonard C; Moryia, N.; Weir, B. E.; Kistler, R. C.; Green, M. L.; Brasen, D.

In: Microelectronic Engineering, Vol. 22, No. 1-4, 1993, p. 69-72.

Research output: Contribution to journal › Article

Manchanda, L, Weber, GR, Kim, YO, Feldman, LC, Moryia, N, Weir, BE, Kistler, RC, Green, ML & Brasen, D 1993, 'A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices', Microelectronic Engineering, vol. 22, no. 1-4, pp. 69-72. https://doi.org/10.1016/0167-9317(93)90132-O
Manchanda L, Weber GR, Kim YO, Feldman LC, Moryia N, Weir BE et al. A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices. Microelectronic Engineering. 1993;22(1-4):69-72. https://doi.org/10.1016/0167-9317(93)90132-O
Manchanda, L. ; Weber, G. R. ; Kim, Y. O. ; Feldman, Leonard C ; Moryia, N. ; Weir, B. E. ; Kistler, R. C. ; Green, M. L. ; Brasen, D. / A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices. In: Microelectronic Engineering. 1993 ; Vol. 22, No. 1-4. pp. 69-72.
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AU - Kistler, R. C.

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