A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices

L. Manchanda, G. R. Weber, Y. O. Kim, L. C. Feldman, N. Moryia, B. E. Weir, R. C. Kistler, M. L. Green, D. Brasen

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Abstract

In this paper, we report a new method to fabricate oxynitride/oxide gate dielectrics for MOS devices. This method utilizes a thin layer of oxynitride as a membrane for controlled diffusion of O2 and oxidation of Si at high temperatures with low thermal budget. MOS devices made with these oxynitride/oxide structures have interface properties like thermal SiO2 with a structure resistant to boron diffusion.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalMicroelectronic Engineering
Volume22
Issue number1-4
DOIs
Publication statusPublished - Aug 1993

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Manchanda, L., Weber, G. R., Kim, Y. O., Feldman, L. C., Moryia, N., Weir, B. E., Kistler, R. C., Green, M. L., & Brasen, D. (1993). A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices. Microelectronic Engineering, 22(1-4), 69-72. https://doi.org/10.1016/0167-9317(93)90132-O