A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices

L. Manchanda; G. R. Weber; Y. O. Kim; L. C. Feldman; N. Moryia; B. E. Weir; R. C. Kistler; M. L. Green; D. Brasen

doi:10.1016/0167-9317(93)90132-O

A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices

L. Manchanda, G. R. Weber, Y. O. Kim, L. C. Feldman, N. Moryia, B. E. Weir, R. C. Kistler, M. L. Green, D. Brasen

Rutgers University

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

In this paper, we report a new method to fabricate oxynitride/oxide gate dielectrics for MOS devices. This method utilizes a thin layer of oxynitride as a membrane for controlled diffusion of O₂ and oxidation of Si at high temperatures with low thermal budget. MOS devices made with these oxynitride/oxide structures have interface properties like thermal SiO₂ with a structure resistant to boron diffusion.

Original language	English
Pages (from-to)	69-72
Number of pages	4
Journal	Microelectronic Engineering
Volume	22
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(93)90132-O
Publication status	Published - Aug 1993

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Cite this

Manchanda, L., Weber, G. R., Kim, Y. O., Feldman, L. C., Moryia, N., Weir, B. E., Kistler, R. C., Green, M. L., & Brasen, D. (1993). A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices. Microelectronic Engineering, 22(1-4), 69-72. https://doi.org/10.1016/0167-9317(93)90132-O

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AU - Moryia, N.

AU - Weir, B. E.

AU - Kistler, R. C.

AU - Green, M. L.

AU - Brasen, D.

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AB - In this paper, we report a new method to fabricate oxynitride/oxide gate dielectrics for MOS devices. This method utilizes a thin layer of oxynitride as a membrane for controlled diffusion of O2 and oxidation of Si at high temperatures with low thermal budget. MOS devices made with these oxynitride/oxide structures have interface properties like thermal SiO2 with a structure resistant to boron diffusion.

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10.1016/0167-9317(93)90132-O