A NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GaAs AND ITS PLASMA-GROWN OXIDE.

J. B. Theeten, D. E. Aspnes, Robert P. H. Chang

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

At certain wavelengths, depending on the thickness of a thin transparent dielectric layer on an absorbing substrate, a standing-wave condition can be produced that efficiently couples the S wave to the substrate, simulating a cavity resonance in the dielectric and maximizing the complex reflectance ratio. Under these conditions high sensitivity is obtained to the nature of the interface between the dielectric and the substrate. We illustrate the method by applying it to plasma-oxidized GaAs samples using scanning ellipsometry from 1. 5 to 5. 6 eV. As-grown samples exhibit a composite transition layer at the interface consisting of a mixture of oxide, unoxidized GaAs, and elemental As. A crystalline As layer is formed at the interface by annealing in N//2 at 550 degree C.

Original languageEnglish
Pages (from-to)6097-6102
Number of pages6
JournalJournal of Applied Physics
Volume49
Issue number12
DOIs
Publication statusPublished - Dec 1978

Fingerprint

transition layers
standing waves
ellipsometry
S waves
reflectance
cavities
annealing
scanning
composite materials
oxides
sensitivity
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

A NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GaAs AND ITS PLASMA-GROWN OXIDE. / Theeten, J. B.; Aspnes, D. E.; Chang, Robert P. H.

In: Journal of Applied Physics, Vol. 49, No. 12, 12.1978, p. 6097-6102.

Research output: Contribution to journalArticle

@article{edbd24f368464c5c8d20d0423b2aa288,
title = "A NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GaAs AND ITS PLASMA-GROWN OXIDE.",
abstract = "At certain wavelengths, depending on the thickness of a thin transparent dielectric layer on an absorbing substrate, a standing-wave condition can be produced that efficiently couples the S wave to the substrate, simulating a cavity resonance in the dielectric and maximizing the complex reflectance ratio. Under these conditions high sensitivity is obtained to the nature of the interface between the dielectric and the substrate. We illustrate the method by applying it to plasma-oxidized GaAs samples using scanning ellipsometry from 1. 5 to 5. 6 eV. As-grown samples exhibit a composite transition layer at the interface consisting of a mixture of oxide, unoxidized GaAs, and elemental As. A crystalline As layer is formed at the interface by annealing in N//2 at 550 degree C.",
author = "Theeten, {J. B.} and Aspnes, {D. E.} and Chang, {Robert P. H.}",
year = "1978",
month = "12",
doi = "10.1063/1.324529",
language = "English",
volume = "49",
pages = "6097--6102",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - A NEW RESONANT ELLIPSOMETRIC TECHNIQUE FOR CHARACTERIZING THE INTERFACE BETWEEN GaAs AND ITS PLASMA-GROWN OXIDE.

AU - Theeten, J. B.

AU - Aspnes, D. E.

AU - Chang, Robert P. H.

PY - 1978/12

Y1 - 1978/12

N2 - At certain wavelengths, depending on the thickness of a thin transparent dielectric layer on an absorbing substrate, a standing-wave condition can be produced that efficiently couples the S wave to the substrate, simulating a cavity resonance in the dielectric and maximizing the complex reflectance ratio. Under these conditions high sensitivity is obtained to the nature of the interface between the dielectric and the substrate. We illustrate the method by applying it to plasma-oxidized GaAs samples using scanning ellipsometry from 1. 5 to 5. 6 eV. As-grown samples exhibit a composite transition layer at the interface consisting of a mixture of oxide, unoxidized GaAs, and elemental As. A crystalline As layer is formed at the interface by annealing in N//2 at 550 degree C.

AB - At certain wavelengths, depending on the thickness of a thin transparent dielectric layer on an absorbing substrate, a standing-wave condition can be produced that efficiently couples the S wave to the substrate, simulating a cavity resonance in the dielectric and maximizing the complex reflectance ratio. Under these conditions high sensitivity is obtained to the nature of the interface between the dielectric and the substrate. We illustrate the method by applying it to plasma-oxidized GaAs samples using scanning ellipsometry from 1. 5 to 5. 6 eV. As-grown samples exhibit a composite transition layer at the interface consisting of a mixture of oxide, unoxidized GaAs, and elemental As. A crystalline As layer is formed at the interface by annealing in N//2 at 550 degree C.

UR - http://www.scopus.com/inward/record.url?scp=0018059228&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018059228&partnerID=8YFLogxK

U2 - 10.1063/1.324529

DO - 10.1063/1.324529

M3 - Article

AN - SCOPUS:0018059228

VL - 49

SP - 6097

EP - 6102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -