A new thermoelectric material

CsBi4Te6

Duck Young Chung, Tim P. Hogan, Melissa Rocci-Lane, Paul Brazis, John R. Ireland, Carl R. Kannewurf, Marina Bastea, Ctirad Uher, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

124 Citations (Scopus)

Abstract

The highly anisotropic material CsBi4Te6 was prepared by the reaction of Cs/Bi2Te3 around 600 °C. The compound crystallizes in the monoclinic space group C2/m with a = 51.9205(8) Å, b = 4.4025(1) Å, c = 14.5118(3) Å, β = 101.480(1)°, V = 3250.75(11) Å3, and Z = 8. The final R values are R1 = 0.0585 and wR2 = 0.1127 for all data. The compound has a 2-D structure composed of NaCl-type [Bi4Te 6] anionic layers and Cs+ ions residing between the layers. The [Bi4Te6] layers are interconnected by Bi-Bi bonds at a distance of 3.2383(10) Å. This material is a narrow gap semiconductor. Optimization studies on the thermoelectric properties with a variety of doping agents show that the electrical properties of CSBi 4Te6 can be tuned to yield an optimized thermoelectric material which is promising for low-temperature applications. Sbl3 doping resulted in p-type behavior and a maximum power factor of 51.5 μW/cm·K2 at 184 K and the corresponding ZT of 0.82 at 225 K. The highest power factor of 59.8 μW/cm·K2 at 151 K was obtained from 0.06% Sb-doped material. We report here the synthesis, physicochemical properties, doping characteristics, charge-transport properties, and thermal conductivity. Also presented are studies on n-type CsBi 4Te6 and comparisons to those of p-type.

Original languageEnglish
Pages (from-to)6414-6428
Number of pages15
JournalJournal of the American Chemical Society
Volume126
Issue number20
DOIs
Publication statusPublished - May 26 2004

Fingerprint

Thermal Conductivity
Semiconductors
Ions
Temperature
Doping (additives)
Transport properties
Charge transfer
Thermal conductivity
Electric properties
Semiconductor materials

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Chung, D. Y., Hogan, T. P., Rocci-Lane, M., Brazis, P., Ireland, J. R., Kannewurf, C. R., ... Kanatzidis, M. G. (2004). A new thermoelectric material: CsBi4Te6. Journal of the American Chemical Society, 126(20), 6414-6428. https://doi.org/10.1021/ja039885f

A new thermoelectric material : CsBi4Te6. / Chung, Duck Young; Hogan, Tim P.; Rocci-Lane, Melissa; Brazis, Paul; Ireland, John R.; Kannewurf, Carl R.; Bastea, Marina; Uher, Ctirad; Kanatzidis, Mercouri G.

In: Journal of the American Chemical Society, Vol. 126, No. 20, 26.05.2004, p. 6414-6428.

Research output: Contribution to journalArticle

Chung, DY, Hogan, TP, Rocci-Lane, M, Brazis, P, Ireland, JR, Kannewurf, CR, Bastea, M, Uher, C & Kanatzidis, MG 2004, 'A new thermoelectric material: CsBi4Te6', Journal of the American Chemical Society, vol. 126, no. 20, pp. 6414-6428. https://doi.org/10.1021/ja039885f
Chung DY, Hogan TP, Rocci-Lane M, Brazis P, Ireland JR, Kannewurf CR et al. A new thermoelectric material: CsBi4Te6. Journal of the American Chemical Society. 2004 May 26;126(20):6414-6428. https://doi.org/10.1021/ja039885f
Chung, Duck Young ; Hogan, Tim P. ; Rocci-Lane, Melissa ; Brazis, Paul ; Ireland, John R. ; Kannewurf, Carl R. ; Bastea, Marina ; Uher, Ctirad ; Kanatzidis, Mercouri G. / A new thermoelectric material : CsBi4Te6. In: Journal of the American Chemical Society. 2004 ; Vol. 126, No. 20. pp. 6414-6428.
@article{f8b600b2d02e4f1e88534643bf78dbd2,
title = "A new thermoelectric material: CsBi4Te6",
abstract = "The highly anisotropic material CsBi4Te6 was prepared by the reaction of Cs/Bi2Te3 around 600 °C. The compound crystallizes in the monoclinic space group C2/m with a = 51.9205(8) {\AA}, b = 4.4025(1) {\AA}, c = 14.5118(3) {\AA}, β = 101.480(1)°, V = 3250.75(11) {\AA}3, and Z = 8. The final R values are R1 = 0.0585 and wR2 = 0.1127 for all data. The compound has a 2-D structure composed of NaCl-type [Bi4Te 6] anionic layers and Cs+ ions residing between the layers. The [Bi4Te6] layers are interconnected by Bi-Bi bonds at a distance of 3.2383(10) {\AA}. This material is a narrow gap semiconductor. Optimization studies on the thermoelectric properties with a variety of doping agents show that the electrical properties of CSBi 4Te6 can be tuned to yield an optimized thermoelectric material which is promising for low-temperature applications. Sbl3 doping resulted in p-type behavior and a maximum power factor of 51.5 μW/cm·K2 at 184 K and the corresponding ZT of 0.82 at 225 K. The highest power factor of 59.8 μW/cm·K2 at 151 K was obtained from 0.06{\%} Sb-doped material. We report here the synthesis, physicochemical properties, doping characteristics, charge-transport properties, and thermal conductivity. Also presented are studies on n-type CsBi 4Te6 and comparisons to those of p-type.",
author = "Chung, {Duck Young} and Hogan, {Tim P.} and Melissa Rocci-Lane and Paul Brazis and Ireland, {John R.} and Kannewurf, {Carl R.} and Marina Bastea and Ctirad Uher and Kanatzidis, {Mercouri G}",
year = "2004",
month = "5",
day = "26",
doi = "10.1021/ja039885f",
language = "English",
volume = "126",
pages = "6414--6428",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "20",

}

TY - JOUR

T1 - A new thermoelectric material

T2 - CsBi4Te6

AU - Chung, Duck Young

AU - Hogan, Tim P.

AU - Rocci-Lane, Melissa

AU - Brazis, Paul

AU - Ireland, John R.

AU - Kannewurf, Carl R.

AU - Bastea, Marina

AU - Uher, Ctirad

AU - Kanatzidis, Mercouri G

PY - 2004/5/26

Y1 - 2004/5/26

N2 - The highly anisotropic material CsBi4Te6 was prepared by the reaction of Cs/Bi2Te3 around 600 °C. The compound crystallizes in the monoclinic space group C2/m with a = 51.9205(8) Å, b = 4.4025(1) Å, c = 14.5118(3) Å, β = 101.480(1)°, V = 3250.75(11) Å3, and Z = 8. The final R values are R1 = 0.0585 and wR2 = 0.1127 for all data. The compound has a 2-D structure composed of NaCl-type [Bi4Te 6] anionic layers and Cs+ ions residing between the layers. The [Bi4Te6] layers are interconnected by Bi-Bi bonds at a distance of 3.2383(10) Å. This material is a narrow gap semiconductor. Optimization studies on the thermoelectric properties with a variety of doping agents show that the electrical properties of CSBi 4Te6 can be tuned to yield an optimized thermoelectric material which is promising for low-temperature applications. Sbl3 doping resulted in p-type behavior and a maximum power factor of 51.5 μW/cm·K2 at 184 K and the corresponding ZT of 0.82 at 225 K. The highest power factor of 59.8 μW/cm·K2 at 151 K was obtained from 0.06% Sb-doped material. We report here the synthesis, physicochemical properties, doping characteristics, charge-transport properties, and thermal conductivity. Also presented are studies on n-type CsBi 4Te6 and comparisons to those of p-type.

AB - The highly anisotropic material CsBi4Te6 was prepared by the reaction of Cs/Bi2Te3 around 600 °C. The compound crystallizes in the monoclinic space group C2/m with a = 51.9205(8) Å, b = 4.4025(1) Å, c = 14.5118(3) Å, β = 101.480(1)°, V = 3250.75(11) Å3, and Z = 8. The final R values are R1 = 0.0585 and wR2 = 0.1127 for all data. The compound has a 2-D structure composed of NaCl-type [Bi4Te 6] anionic layers and Cs+ ions residing between the layers. The [Bi4Te6] layers are interconnected by Bi-Bi bonds at a distance of 3.2383(10) Å. This material is a narrow gap semiconductor. Optimization studies on the thermoelectric properties with a variety of doping agents show that the electrical properties of CSBi 4Te6 can be tuned to yield an optimized thermoelectric material which is promising for low-temperature applications. Sbl3 doping resulted in p-type behavior and a maximum power factor of 51.5 μW/cm·K2 at 184 K and the corresponding ZT of 0.82 at 225 K. The highest power factor of 59.8 μW/cm·K2 at 151 K was obtained from 0.06% Sb-doped material. We report here the synthesis, physicochemical properties, doping characteristics, charge-transport properties, and thermal conductivity. Also presented are studies on n-type CsBi 4Te6 and comparisons to those of p-type.

UR - http://www.scopus.com/inward/record.url?scp=2442657785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442657785&partnerID=8YFLogxK

U2 - 10.1021/ja039885f

DO - 10.1021/ja039885f

M3 - Article

VL - 126

SP - 6414

EP - 6428

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 20

ER -