A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior

Jason F. Khoury, Alexander J.E. Rettie, Mojammel A. Khan, Nirmal J. Ghimire, Iñigo Robredo, Jonathan E. Pfluger, Koushik Pal, Chris Wolverton, Aitor Bergara, J. S. Jiang, Leslie M. Schoop, Maia G. Vergniory, J. F. Mitchell, Duck Young Chung, Mercouri G. Kanatzidis

Research output: Contribution to journalArticle

Abstract

Dirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; however, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. Here, we report the synthesis of the type-II Dirac semimetal Ir2In8S, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the &-Z direction of the Brillouin zone. We further show that Ir2In8S has a high electron carrier mobility of ∼10 »000 cm2/(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of ∼6000% at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, Ir2In8S introduces a new material system to study topological semimetals and enable advances in the field of topological materials.

Original languageEnglish
Pages (from-to)19130-19137
Number of pages8
JournalJournal of the American Chemical Society
Volume141
Issue number48
DOIs
Publication statusPublished - Dec 4 2019

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Metalloids
Crystallization
Fruit
Air
Databases
Electrons
Carrier mobility
Magnetoresistance
Electronic structure
Electron transport properties
Crystal growth
Direction compound

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Khoury, J. F., Rettie, A. J. E., Khan, M. A., Ghimire, N. J., Robredo, I., Pfluger, J. E., ... Kanatzidis, M. G. (2019). A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior. Journal of the American Chemical Society, 141(48), 19130-19137. https://doi.org/10.1021/jacs.9b10147

A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior. / Khoury, Jason F.; Rettie, Alexander J.E.; Khan, Mojammel A.; Ghimire, Nirmal J.; Robredo, Iñigo; Pfluger, Jonathan E.; Pal, Koushik; Wolverton, Chris; Bergara, Aitor; Jiang, J. S.; Schoop, Leslie M.; Vergniory, Maia G.; Mitchell, J. F.; Chung, Duck Young; Kanatzidis, Mercouri G.

In: Journal of the American Chemical Society, Vol. 141, No. 48, 04.12.2019, p. 19130-19137.

Research output: Contribution to journalArticle

Khoury, JF, Rettie, AJE, Khan, MA, Ghimire, NJ, Robredo, I, Pfluger, JE, Pal, K, Wolverton, C, Bergara, A, Jiang, JS, Schoop, LM, Vergniory, MG, Mitchell, JF, Chung, DY & Kanatzidis, MG 2019, 'A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior', Journal of the American Chemical Society, vol. 141, no. 48, pp. 19130-19137. https://doi.org/10.1021/jacs.9b10147
Khoury JF, Rettie AJE, Khan MA, Ghimire NJ, Robredo I, Pfluger JE et al. A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior. Journal of the American Chemical Society. 2019 Dec 4;141(48):19130-19137. https://doi.org/10.1021/jacs.9b10147
Khoury, Jason F. ; Rettie, Alexander J.E. ; Khan, Mojammel A. ; Ghimire, Nirmal J. ; Robredo, Iñigo ; Pfluger, Jonathan E. ; Pal, Koushik ; Wolverton, Chris ; Bergara, Aitor ; Jiang, J. S. ; Schoop, Leslie M. ; Vergniory, Maia G. ; Mitchell, J. F. ; Chung, Duck Young ; Kanatzidis, Mercouri G. / A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior. In: Journal of the American Chemical Society. 2019 ; Vol. 141, No. 48. pp. 19130-19137.
@article{15e9c11b51b2474c80f6174607a814ac,
title = "A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior",
abstract = "Dirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; however, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. Here, we report the synthesis of the type-II Dirac semimetal Ir2In8S, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the &-Z direction of the Brillouin zone. We further show that Ir2In8S has a high electron carrier mobility of ∼10 »000 cm2/(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of ∼6000{\%} at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, Ir2In8S introduces a new material system to study topological semimetals and enable advances in the field of topological materials.",
author = "Khoury, {Jason F.} and Rettie, {Alexander J.E.} and Khan, {Mojammel A.} and Ghimire, {Nirmal J.} and I{\~n}igo Robredo and Pfluger, {Jonathan E.} and Koushik Pal and Chris Wolverton and Aitor Bergara and Jiang, {J. S.} and Schoop, {Leslie M.} and Vergniory, {Maia G.} and Mitchell, {J. F.} and Chung, {Duck Young} and Kanatzidis, {Mercouri G.}",
year = "2019",
month = "12",
day = "4",
doi = "10.1021/jacs.9b10147",
language = "English",
volume = "141",
pages = "19130--19137",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "48",

}

TY - JOUR

T1 - A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior

AU - Khoury, Jason F.

AU - Rettie, Alexander J.E.

AU - Khan, Mojammel A.

AU - Ghimire, Nirmal J.

AU - Robredo, Iñigo

AU - Pfluger, Jonathan E.

AU - Pal, Koushik

AU - Wolverton, Chris

AU - Bergara, Aitor

AU - Jiang, J. S.

AU - Schoop, Leslie M.

AU - Vergniory, Maia G.

AU - Mitchell, J. F.

AU - Chung, Duck Young

AU - Kanatzidis, Mercouri G.

PY - 2019/12/4

Y1 - 2019/12/4

N2 - Dirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; however, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. Here, we report the synthesis of the type-II Dirac semimetal Ir2In8S, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the &-Z direction of the Brillouin zone. We further show that Ir2In8S has a high electron carrier mobility of ∼10 »000 cm2/(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of ∼6000% at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, Ir2In8S introduces a new material system to study topological semimetals and enable advances in the field of topological materials.

AB - Dirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; however, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. Here, we report the synthesis of the type-II Dirac semimetal Ir2In8S, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the &-Z direction of the Brillouin zone. We further show that Ir2In8S has a high electron carrier mobility of ∼10 »000 cm2/(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of ∼6000% at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, Ir2In8S introduces a new material system to study topological semimetals and enable advances in the field of topological materials.

UR - http://www.scopus.com/inward/record.url?scp=85075774847&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85075774847&partnerID=8YFLogxK

U2 - 10.1021/jacs.9b10147

DO - 10.1021/jacs.9b10147

M3 - Article

C2 - 31697089

AN - SCOPUS:85075774847

VL - 141

SP - 19130

EP - 19137

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 48

ER -