TY - JOUR
T1 - A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system
AU - Edwards, D. D.
AU - Mason, Thomas O
AU - Goutenoire, F.
AU - Poeppelmeier, Kenneth R
PY - 1997/3/31
Y1 - 1997/3/31
N2 - A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.
AB - A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.
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M3 - Article
AN - SCOPUS:0000976496
VL - 70
SP - 1706
EP - 1708
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
ER -