A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - Mar 31 1997|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)