Abstract
A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.
| Original language | English |
|---|---|
| Pages (from-to) | 1706-1708 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 70 |
| Issue number | 13 |
| Publication status | Published - Mar 31 1997 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system. / Edwards, D. D.; Mason, Thomas O; Goutenoire, F.; Poeppelmeier, Kenneth R.
In: Applied Physics Letters, Vol. 70, No. 13, 31.03.1997, p. 1706-1708.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system
AU - Edwards, D. D.
AU - Mason, Thomas O
AU - Goutenoire, F.
AU - Poeppelmeier, Kenneth R
PY - 1997/3/31
Y1 - 1997/3/31
N2 - A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.
AB - A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.
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UR - http://www.scopus.com/inward/citedby.url?scp=0000976496&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0000976496
VL - 70
SP - 1706
EP - 1708
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
ER -