Abstract
A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.
| Original language | English |
|---|---|
| Pages (from-to) | 1706-1708 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 70 |
| Issue number | 13 |
| Publication status | Published - Mar 31 1997 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Edwards, D. D., Mason, T. O., Goutenoire, F., & Poeppelmeier, K. R. (1997). A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system. Applied Physics Letters, 70(13), 1706-1708.