A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system

D. D. Edwards, Thomas O Mason, F. Goutenoire, Kenneth R Poeppelmeier

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Abstract

A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.

Original languageEnglish
Pages (from-to)1706-1708
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number13
Publication statusPublished - Mar 31 1997

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ITO (semiconductors)
conduction
oxides
indium oxides
optical properties
conductivity
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system. / Edwards, D. D.; Mason, Thomas O; Goutenoire, F.; Poeppelmeier, Kenneth R.

In: Applied Physics Letters, Vol. 70, No. 13, 31.03.1997, p. 1706-1708.

Research output: Contribution to journalArticle

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