A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system

D. D. Edwards; Thomas O Mason; F. Goutenoire; Kenneth R Poeppelmeier

A new transparent conducting oxide in the Ga₂O₃-In₂O₃-SnO₂ system

D. D. Edwards, Thomas O Mason, F. Goutenoire, Kenneth R Poeppelmeier

Northwestern University

Research output: Contribution to journal › Article

162 Citations (Scopus)

Abstract

A new transparent conducting oxide (TCO), which can be expressed as Ga_3-xIn_5+xSn₂O₁₆; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga₂O₃-In₂O₃-SnO₂ are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm^-1 was obtained for H₂-reduced Ga_2.4In_5.6Sn₂O₁₆. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In₂O₃.

Original language	English
Pages (from-to)	1706-1708
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	13
Publication status	Published - Mar 31 1997

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Edwards, D. D., Mason, T. O., Goutenoire, F., & Poeppelmeier, K. R. (1997). A new transparent conducting oxide in the Ga₂O₃-In₂O₃-SnO₂ system. Applied Physics Letters, 70(13), 1706-1708.

@article{1900b7f27aef4ea596f26f0a87b0e3e4,

title = "A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system",

abstract = "A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.",

author = "Edwards, {D. D.} and Mason, {Thomas O} and F. Goutenoire and Poeppelmeier, {Kenneth R}",

year = "1997",

month = mar

day = "31",

language = "English",

volume = "70",

pages = "1706--1708",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - A new transparent conducting oxide in the Ga2O3-In2O3-SnO2 system

AU - Edwards, D. D.

AU - Mason, Thomas O

AU - Goutenoire, F.

AU - Poeppelmeier, Kenneth R

PY - 1997/3/31

Y1 - 1997/3/31

N2 - A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.

AB - A new transparent conducting oxide (TCO), which can be expressed as Ga3-xIn5+xSn2O16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga2O3-In2O3-SnO2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm-1 was obtained for H2-reduced Ga2.4In5.6Sn2O16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In2O3.

UR - http://www.scopus.com/inward/record.url?scp=0000976496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000976496&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000976496

VL - 70

SP - 1706

EP - 1708

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13