Abstract
A novel technique for fabricating silicon dioxide (SiO2) and silicon carbide (SiC) nanostructures on SiC substrates is reported in this paper. The technique involves amorphization of crystalline SiC at the nanoscale using a focused ion beam followed by selective thermal oxidation that results in oxide nanostructures due to the enhanced oxidation rate of amorphous SiC. Selective etching of the oxide results in crystalline SiC nanostructures. Nanostructures (SiO2 and SiC) with minimum feature sizes of ∼55 nm have been fabricated. Oxide nano-channels with channel widths of less than 20 nm are demonstrated. The physical mechanisms that control the evolution of the structures and limit the resolution have been addressed.
| Original language | English |
|---|---|
| Article number | 038 |
| Pages (from-to) | 4514-4518 |
| Number of pages | 5 |
| Journal | Nanotechnology |
| Volume | 17 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - Aug 1 2006 |
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ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
- Materials Science(all)
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A novel technique for the fabrication of nanostructures on silicon carbide using amorphization and oxidation. / Dhar, Sarit; Davis, Ryan P.; Feldman, Leonard C.
In: Nanotechnology, Vol. 17, No. 17, 038, 01.08.2006, p. 4514-4518.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A novel technique for the fabrication of nanostructures on silicon carbide using amorphization and oxidation
AU - Dhar, Sarit
AU - Davis, Ryan P.
AU - Feldman, Leonard C
PY - 2006/8/1
Y1 - 2006/8/1
N2 - A novel technique for fabricating silicon dioxide (SiO2) and silicon carbide (SiC) nanostructures on SiC substrates is reported in this paper. The technique involves amorphization of crystalline SiC at the nanoscale using a focused ion beam followed by selective thermal oxidation that results in oxide nanostructures due to the enhanced oxidation rate of amorphous SiC. Selective etching of the oxide results in crystalline SiC nanostructures. Nanostructures (SiO2 and SiC) with minimum feature sizes of ∼55 nm have been fabricated. Oxide nano-channels with channel widths of less than 20 nm are demonstrated. The physical mechanisms that control the evolution of the structures and limit the resolution have been addressed.
AB - A novel technique for fabricating silicon dioxide (SiO2) and silicon carbide (SiC) nanostructures on SiC substrates is reported in this paper. The technique involves amorphization of crystalline SiC at the nanoscale using a focused ion beam followed by selective thermal oxidation that results in oxide nanostructures due to the enhanced oxidation rate of amorphous SiC. Selective etching of the oxide results in crystalline SiC nanostructures. Nanostructures (SiO2 and SiC) with minimum feature sizes of ∼55 nm have been fabricated. Oxide nano-channels with channel widths of less than 20 nm are demonstrated. The physical mechanisms that control the evolution of the structures and limit the resolution have been addressed.
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UR - http://www.scopus.com/inward/citedby.url?scp=34948835026&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/17/17/038
DO - 10.1088/0957-4484/17/17/038
M3 - Article
AN - SCOPUS:34948835026
VL - 17
SP - 4514
EP - 4518
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 17
M1 - 038
ER -