A novel technique for the fabrication of nanostructures on silicon carbide using amorphization and oxidation

Sarit Dhar, Ryan P. Davis, Leonard C Feldman

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A novel technique for fabricating silicon dioxide (SiO2) and silicon carbide (SiC) nanostructures on SiC substrates is reported in this paper. The technique involves amorphization of crystalline SiC at the nanoscale using a focused ion beam followed by selective thermal oxidation that results in oxide nanostructures due to the enhanced oxidation rate of amorphous SiC. Selective etching of the oxide results in crystalline SiC nanostructures. Nanostructures (SiO2 and SiC) with minimum feature sizes of ∼55 nm have been fabricated. Oxide nano-channels with channel widths of less than 20 nm are demonstrated. The physical mechanisms that control the evolution of the structures and limit the resolution have been addressed.

Original languageEnglish
Article number038
Pages (from-to)4514-4518
Number of pages5
JournalNanotechnology
Volume17
Issue number17
DOIs
Publication statusPublished - Aug 1 2006

Fingerprint

Amorphization
Silicon carbide
Nanostructures
Fabrication
Oxidation
Oxides
Crystalline materials
Focused ion beams
Amorphous silicon
Silicon Dioxide
silicon carbide
Etching
Silica
Substrates

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

A novel technique for the fabrication of nanostructures on silicon carbide using amorphization and oxidation. / Dhar, Sarit; Davis, Ryan P.; Feldman, Leonard C.

In: Nanotechnology, Vol. 17, No. 17, 038, 01.08.2006, p. 4514-4518.

Research output: Contribution to journalArticle

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