Surface diffusion is of importance in a variety of surface related processes. In this paper we discuss the evaluation of surface diffusion coefficients from ion scattering measurements of cluster growth processes. Values of the surface diffusion coefficient are extracted for the cases of Sn/Si(100), Sn/Si(111), Ga/Si(100), Ga/Si(111) and Ga on As terminated Si(111).
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics