A novel technique to determine hetero-surface diffusion in semiconductor systems

M. Zinke-Allmang; Leonard C Feldman

doi:10.1016/0169-4332(88)90331-5

A novel technique to determine hetero-surface diffusion in semiconductor systems

M. Zinke-Allmang, Leonard C Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Surface diffusion is of importance in a variety of surface related processes. In this paper we discuss the evaluation of surface diffusion coefficients from ion scattering measurements of cluster growth processes. Values of the surface diffusion coefficient are extracted for the cases of Sn/Si(100), Sn/Si(111), Ga/Si(100), Ga/Si(111) and Ga on As terminated Si(111).

Original language	English
Pages (from-to)	395-399
Number of pages	5
Journal	Applied Surface Science
Volume	33-34
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(88)90331-5
Publication status	Published - 1988

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Surfaces, Coatings and Films
Condensed Matter Physics

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title = "A novel technique to determine hetero-surface diffusion in semiconductor systems",

abstract = "Surface diffusion is of importance in a variety of surface related processes. In this paper we discuss the evaluation of surface diffusion coefficients from ion scattering measurements of cluster growth processes. Values of the surface diffusion coefficient are extracted for the cases of Sn/Si(100), Sn/Si(111), Ga/Si(100), Ga/Si(111) and Ga on As terminated Si(111).",

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AB - Surface diffusion is of importance in a variety of surface related processes. In this paper we discuss the evaluation of surface diffusion coefficients from ion scattering measurements of cluster growth processes. Values of the surface diffusion coefficient are extracted for the cases of Sn/Si(100), Sn/Si(111), Ga/Si(100), Ga/Si(111) and Ga on As terminated Si(111).

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