Abstract
Surface diffusion is of importance in a variety of surface related processes. In this paper we discuss the evaluation of surface diffusion coefficients from ion scattering measurements of cluster growth processes. Values of the surface diffusion coefficient are extracted for the cases of Sn/Si(100), Sn/Si(111), Ga/Si(100), Ga/Si(111) and Ga on As terminated Si(111).
| Original language | English |
|---|---|
| Pages (from-to) | 395-399 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 33-34 |
| Issue number | C |
| DOIs | |
| Publication status | Published - 1988 |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics
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Zinke-Allmang, M., & Feldman, L. C. (1988). A novel technique to determine hetero-surface diffusion in semiconductor systems. Applied Surface Science, 33-34(C), 395-399. https://doi.org/10.1016/0169-4332(88)90331-5