A novel technique to determine hetero-surface diffusion in semiconductor systems

M. Zinke-Allmang, Leonard C Feldman

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

Surface diffusion is of importance in a variety of surface related processes. In this paper we discuss the evaluation of surface diffusion coefficients from ion scattering measurements of cluster growth processes. Values of the surface diffusion coefficient are extracted for the cases of Sn/Si(100), Sn/Si(111), Ga/Si(100), Ga/Si(111) and Ga on As terminated Si(111).

Original languageEnglish
Pages (from-to)395-399
Number of pages5
JournalApplied Surface Science
Volume33-34
Issue numberC
DOIs
Publication statusPublished - 1988

Fingerprint

Surface diffusion
surface diffusion
Semiconductor materials
diffusion coefficient
ion scattering
Scattering
Ions
evaluation

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

A novel technique to determine hetero-surface diffusion in semiconductor systems. / Zinke-Allmang, M.; Feldman, Leonard C.

In: Applied Surface Science, Vol. 33-34, No. C, 1988, p. 395-399.

Research output: Contribution to journal › Article

Zinke-Allmang, M & Feldman, LC 1988, 'A novel technique to determine hetero-surface diffusion in semiconductor systems', Applied Surface Science, vol. 33-34, no. C, pp. 395-399. https://doi.org/10.1016/0169-4332(88)90331-5
Zinke-Allmang M, Feldman LC. A novel technique to determine hetero-surface diffusion in semiconductor systems. Applied Surface Science. 1988;33-34(C):395-399. https://doi.org/10.1016/0169-4332(88)90331-5
Zinke-Allmang, M. ; Feldman, Leonard C. / A novel technique to determine hetero-surface diffusion in semiconductor systems. In: Applied Surface Science. 1988 ; Vol. 33-34, No. C. pp. 395-399.
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