A Quantitative Study of the Relationship Between Interfacial Carbon and Line Dislocation Density in Silicon Molecular Beam Epitaxy

J. H. McFee, R. G. Swartz, V. D. Archer, S. N. Finegan, L. C. Feldman

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Silicon layers grown by molecular beam epitaxy on (100) silicon substrates were depth-profiled for carbon and oxygen by secondary ion mass spectrometry (SIMS). The same epitaxial layers were subjected to a defect etch to reveal dislocation density. A strong correlation is found between the carbon concentration at the substrate-epitaxy interface and the line dislocation density of the epitaxial layer. Layers with interfacial carbon concentration ≈1021cm–3 exhibit line dislocation densities ≥107cm–2, while layers with interfacial carbon concentration ≤1019cm–3 (≔0.01 monolayer carbon) have line dislocation densities ≥104em–2. In contrast, no correlation is found between interfacial oxygen (as revealed by SIMS) and the line dislocation density of the epitaxial layers.

Original languageEnglish
Pages (from-to)214-216
Number of pages3
JournalJournal of the Electrochemical Society
Volume130
Issue number1
DOIs
Publication statusPublished - Jan 1983

Keywords

  • contamination
  • defects
  • growth
  • semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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