Abstract
Silicon layers grown by molecular beam epitaxy on (100) silicon substrates were depth-profiled for carbon and oxygen by secondary ion mass spectrometry (SIMS). The same epitaxial layers were subjected to a defect etch to reveal dislocation density. A strong correlation is found between the carbon concentration at the substrate-epitaxy interface and the line dislocation density of the epitaxial layer. Layers with interfacial carbon concentration ≈1021cm–3 exhibit line dislocation densities ≥107cm–2, while layers with interfacial carbon concentration ≤1019cm–3 (≔0.01 monolayer carbon) have line dislocation densities ≥104em–2. In contrast, no correlation is found between interfacial oxygen (as revealed by SIMS) and the line dislocation density of the epitaxial layers.
Original language | English |
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Pages (from-to) | 214-216 |
Number of pages | 3 |
Journal | Journal of the Electrochemical Society |
Volume | 130 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 1983 |
Keywords
- contamination
- defects
- growth
- semiconductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry