A quasimolecular approach to the field-effect molecular transistor: Theory and application

Y. L. Zhao, T. C. Allison, Vladimiro Mujica, M. Marquez, C. Gonzalez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on a theoretical extension and computational implementation of a DFT-based quasimolecular approach to the description of molecular conductance, with consideration of gating effects in both metal - molecule and semiconductor - molecule junctions in a transistor-like device. A significant increase in the conductance at low bias has been found in the presence of a gate voltage. The origin of this transistor-diode behavior may be traced to a field-effect shift of a molecular frontier orbital.

Original languageEnglish
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages559-561
Number of pages3
Volume1
Publication statusPublished - 2007
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: May 20 2007May 24 2007

Other

Other2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
CountryUnited States
CitySanta Clara, CA
Period5/20/075/24/07

Fingerprint

Transistors
Molecules
Molecular orbitals
Discrete Fourier transforms
Diodes
Semiconductor materials
Electric potential
Metals

Keywords

  • Ab initio
  • Computer modeling
  • Field-effect
  • Gating
  • Green's-function
  • Molecular conductance

ASJC Scopus subject areas

  • Mechanical Engineering

Cite this

Zhao, Y. L., Allison, T. C., Mujica, V., Marquez, M., & Gonzalez, C. (2007). A quasimolecular approach to the field-effect molecular transistor: Theory and application. In 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings (Vol. 1, pp. 559-561)

A quasimolecular approach to the field-effect molecular transistor : Theory and application. / Zhao, Y. L.; Allison, T. C.; Mujica, Vladimiro; Marquez, M.; Gonzalez, C.

2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings. Vol. 1 2007. p. 559-561.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhao, YL, Allison, TC, Mujica, V, Marquez, M & Gonzalez, C 2007, A quasimolecular approach to the field-effect molecular transistor: Theory and application. in 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings. vol. 1, pp. 559-561, 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Santa Clara, CA, United States, 5/20/07.
Zhao YL, Allison TC, Mujica V, Marquez M, Gonzalez C. A quasimolecular approach to the field-effect molecular transistor: Theory and application. In 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings. Vol. 1. 2007. p. 559-561
Zhao, Y. L. ; Allison, T. C. ; Mujica, Vladimiro ; Marquez, M. ; Gonzalez, C. / A quasimolecular approach to the field-effect molecular transistor : Theory and application. 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings. Vol. 1 2007. pp. 559-561
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