A Structural Investigation of Ga3-xIn5+xSn2O16

D. D. Edwards, Thomas O Mason, W. Sinkler, L. D. Marks, F. Goutenoire, Kenneth R Poeppelmeier

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20 Citations (Scopus)

Abstract

The structure of the recently reported transparent conductor, Ga3-xIn5+xSn2O16(0.31/a. Although there are similarities to the parent oxide structures, the T-phase lacks one of the distorted InO6octahedra observed in In2O3, which may account for its inability to be donor-doped by Sn.

Original languageEnglish
Pages (from-to)242-250
Number of pages9
JournalJournal of Solid State Chemistry
Volume140
Issue number2
DOIs
Publication statusPublished - Nov 1 1998

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Oxides
conductors
oxides

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry
  • Materials Chemistry

Cite this

A Structural Investigation of Ga3-xIn5+xSn2O16. / Edwards, D. D.; Mason, Thomas O; Sinkler, W.; Marks, L. D.; Goutenoire, F.; Poeppelmeier, Kenneth R.

In: Journal of Solid State Chemistry, Vol. 140, No. 2, 01.11.1998, p. 242-250.

Research output: Contribution to journalArticle

Edwards, D. D. ; Mason, Thomas O ; Sinkler, W. ; Marks, L. D. ; Goutenoire, F. ; Poeppelmeier, Kenneth R. / A Structural Investigation of Ga3-xIn5+xSn2O16. In: Journal of Solid State Chemistry. 1998 ; Vol. 140, No. 2. pp. 242-250.
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