A unique framework in BaGa2Sb2

A new Zintl phase with large tunnels

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

BaGa2Sb2 was obtained from a direct element combination reaction in a sealed graphite tube at 950 °C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 25.454(5) Å, b = 4.4421(9) Å, c = 10.273(6) Å, and Z = 8. The anionic [Ga2Sb6/3]2- framework is assembled by the ethane-like dimeric [Sb3Ga-GaSb3] units sharing Sb atoms, forming parallel tunnels with a 26-membered ring cross section. These tunnels are filled with Ba atoms. The three-dimensional [Ga2Sb6/3]2- framework features a new structure type. The compound satisfies the classical Zintl concept. Band structure calculations indicate that the material is a semiconductor, and this is confirmed by spectroscopic experiments which show Eg ∼ 0.35 eV. The calculations also suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Polycrystalline ingots of BaGa2Sb2 show room-temperature electrical conductivity of ∼65 S/cm and a Seebeck coefficient of +65 μV/K.

Original languageEnglish
Pages (from-to)3781-3785
Number of pages5
JournalInorganic Chemistry
Volume40
Issue number15
DOIs
Publication statusPublished - Jul 16 2001

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  • Inorganic Chemistry

Cite this

A unique framework in BaGa2Sb2 : A new Zintl phase with large tunnels. / Kim, S. J.; Kanatzidis, Mercouri G.

In: Inorganic Chemistry, Vol. 40, No. 15, 16.07.2001, p. 3781-3785.

Research output: Contribution to journalArticle

@article{294f6a6c2a0e452980b48a6d00c5d296,
title = "A unique framework in BaGa2Sb2: A new Zintl phase with large tunnels",
abstract = "BaGa2Sb2 was obtained from a direct element combination reaction in a sealed graphite tube at 950 °C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 25.454(5) {\AA}, b = 4.4421(9) {\AA}, c = 10.273(6) {\AA}, and Z = 8. The anionic [Ga2Sb6/3]2- framework is assembled by the ethane-like dimeric [Sb3Ga-GaSb3] units sharing Sb atoms, forming parallel tunnels with a 26-membered ring cross section. These tunnels are filled with Ba atoms. The three-dimensional [Ga2Sb6/3]2- framework features a new structure type. The compound satisfies the classical Zintl concept. Band structure calculations indicate that the material is a semiconductor, and this is confirmed by spectroscopic experiments which show Eg ∼ 0.35 eV. The calculations also suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Polycrystalline ingots of BaGa2Sb2 show room-temperature electrical conductivity of ∼65 S/cm and a Seebeck coefficient of +65 μV/K.",
author = "Kim, {S. J.} and Kanatzidis, {Mercouri G}",
year = "2001",
month = "7",
day = "16",
doi = "10.1021/ic010069n",
language = "English",
volume = "40",
pages = "3781--3785",
journal = "Inorganic Chemistry",
issn = "0020-1669",
publisher = "American Chemical Society",
number = "15",

}

TY - JOUR

T1 - A unique framework in BaGa2Sb2

T2 - A new Zintl phase with large tunnels

AU - Kim, S. J.

AU - Kanatzidis, Mercouri G

PY - 2001/7/16

Y1 - 2001/7/16

N2 - BaGa2Sb2 was obtained from a direct element combination reaction in a sealed graphite tube at 950 °C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 25.454(5) Å, b = 4.4421(9) Å, c = 10.273(6) Å, and Z = 8. The anionic [Ga2Sb6/3]2- framework is assembled by the ethane-like dimeric [Sb3Ga-GaSb3] units sharing Sb atoms, forming parallel tunnels with a 26-membered ring cross section. These tunnels are filled with Ba atoms. The three-dimensional [Ga2Sb6/3]2- framework features a new structure type. The compound satisfies the classical Zintl concept. Band structure calculations indicate that the material is a semiconductor, and this is confirmed by spectroscopic experiments which show Eg ∼ 0.35 eV. The calculations also suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Polycrystalline ingots of BaGa2Sb2 show room-temperature electrical conductivity of ∼65 S/cm and a Seebeck coefficient of +65 μV/K.

AB - BaGa2Sb2 was obtained from a direct element combination reaction in a sealed graphite tube at 950 °C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 25.454(5) Å, b = 4.4421(9) Å, c = 10.273(6) Å, and Z = 8. The anionic [Ga2Sb6/3]2- framework is assembled by the ethane-like dimeric [Sb3Ga-GaSb3] units sharing Sb atoms, forming parallel tunnels with a 26-membered ring cross section. These tunnels are filled with Ba atoms. The three-dimensional [Ga2Sb6/3]2- framework features a new structure type. The compound satisfies the classical Zintl concept. Band structure calculations indicate that the material is a semiconductor, and this is confirmed by spectroscopic experiments which show Eg ∼ 0.35 eV. The calculations also suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Polycrystalline ingots of BaGa2Sb2 show room-temperature electrical conductivity of ∼65 S/cm and a Seebeck coefficient of +65 μV/K.

UR - http://www.scopus.com/inward/record.url?scp=0035898068&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035898068&partnerID=8YFLogxK

U2 - 10.1021/ic010069n

DO - 10.1021/ic010069n

M3 - Article

VL - 40

SP - 3781

EP - 3785

JO - Inorganic Chemistry

JF - Inorganic Chemistry

SN - 0020-1669

IS - 15

ER -