Ab-initio calculation, using ab-initio pseudopotentials, of some electronic properties of ethane, methylsilane and disilane

Sid Topiol, Mark A Ratner, Jules W. Moskowitz

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Recently-developed ab-initio pseudopotentials are employed for the calculation of electronic energy levels and internal rotation barriers in C2H6, CH3SiH3 and Si2H6. The calculations are performed at the experimental internal geometry, using double-zeta quality gaussian basis sets. The results show that the errors caused by the use of the pseudo-potential are negligible compared to those of limited basis-set size, so that the pseudopotentials can indeed be used to replace the core electrons.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalChemical Physics
Volume20
Issue number1
DOIs
Publication statusPublished - Feb 15 1977

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Ethane
Electronic properties
ethane
pseudopotentials
electronics
Electron energy levels
energy levels
Geometry
Electrons
geometry
electrons

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Ab-initio calculation, using ab-initio pseudopotentials, of some electronic properties of ethane, methylsilane and disilane. / Topiol, Sid; Ratner, Mark A; Moskowitz, Jules W.

In: Chemical Physics, Vol. 20, No. 1, 15.02.1977, p. 1-7.

Research output: Contribution to journalArticle

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