Ab initio calculations of the energetics of the neutral Si vacancy defect

J. L. Mercer, J. S. Nelson, A. F. Wright, Ellen Stechel

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Ab initio plane-wave pseudopotential calculations for the neutral silicon vacancy indicate a formation energy of 3.6 eV, with the surrounding lattice undergoing a tetragonal distortion with the nearby atoms forming two dimers having bond lengths 2.91 Å. Close in energy is a tetrahedrally distorted structure in which the nearby atoms relax towards the vacancy by 12.6% of the bulk bond length. Additional distortions with trigonal symmetry were also investigated, but no stable structures were found. The symmetry, energetics, and geometry are found to be a sensitive function of the computational basis-set and supercell used in the plane-wave calculations.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalModelling and Simulation in Materials Science and Engineering
Volume6
Issue number1
DOIs
Publication statusPublished - Jan 1998

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ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Modelling and Simulation

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