Accurate First-Principles Detailed-Balance Determination of Auger Recombination and Impact Ionization Rates in Semiconductors

S. Picozzi, R. Asahi, C. B. Geller, A. J. Freeman

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

The technologically important prediction of Auger recombination lifetimes in semiconductors is addressed by means of a fully first-principles formalism, based on precise energy bands and wave functions provided by the full-potential linearized augmented plane wave code. The minority carrier Auger lifetime is determined by two related approaches: (i) a direct evaluation within Fermi’s golden rule, and (ii) an indirect evaluation, based on a detailed balance formulation combining Auger recombination and its inverse process, impact ionization, in a unified framework. Lifetimes determined with the direct and indirect methods show excellent consistency between them (i) for [Formula presented]-doped GaAs and (ii) with measured values for GaAs and InGaAs. This indicates the computational formalism as a new sensitive tool for use in materials performance optimization.

Original languageEnglish
JournalPhysical review letters
Volume89
Issue number19
DOIs
Publication statusPublished - 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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