Advances in high κ gate dielectrics for Si and III-V semiconductors

J. Kwo; M. Hong; B. Busch; D. A. Muller; Y. J. Chabal; A. R. Kortan; J. P. Mannaerts; B. Yang; P. Ye; H. Gossmann; A. M. Sergent; K. K. Ng; J. Bude; W. H. Schulte; E. Garfunkel; T. Gustafsson

doi:10.1016/S0022-0248(02)02192-9

Advances in high κ gate dielectrics for Si and III-V semiconductors

J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, T. Gustafsson

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

69 Citations (Scopus)

Abstract

Gate stacks containing rare earth oxides of Gd₂O₃ and Y₂O₃ as alternative high permittivity gate dielectrics for Si was investigated. The growth and interfaces of thin dielectric films on semiconductors was controlled using ultrahigh vacuum deposition. The interfaces achieved in the gate stacks enabled the electrical, chemical, and structural studies to elucidate the critical materials integration issues for CMOS scaling. The requirements included morphology dependence, interfacial structure and reaction, thermal stability and gate electrode compatibility.

Original language	English
Pages (from-to)	645-650
Number of pages	6
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02192-9
Publication status	Published - Apr 1 2003
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: Sep 15 2002 → Sep 20 2002

Keywords

A3. Molecular beam epitaxy
B1. Oxides
B2. Dielectric materials
B3. Field effect transistors

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(02)02192-9

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Kwo, J., Hong, M., Busch, B., Muller, D. A., Chabal, Y. J., Kortan, A. R., Mannaerts, J. P., Yang, B., Ye, P., Gossmann, H., Sergent, A. M., Ng, K. K., Bude, J., Schulte, W. H., Garfunkel, E., & Gustafsson, T. (2003). Advances in high κ gate dielectrics for Si and III-V semiconductors. Journal of Crystal Growth, 251(1-4), 645-650. https://doi.org/10.1016/S0022-0248(02)02192-9

Advances in high κ gate dielectrics for Si and III-V semiconductors. / Kwo, J.; Hong, M.; Busch, B.; Muller, D. A.; Chabal, Y. J.; Kortan, A. R.; Mannaerts, J. P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A. M.; Ng, K. K.; Bude, J.; Schulte, W. H.; Garfunkel, E.; Gustafsson, T.

In: Journal of Crystal Growth, Vol. 251, No. 1-4, 01.04.2003, p. 645-650.

Research output: Contribution to journal › Conference article › peer-review

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title = "Advances in high κ gate dielectrics for Si and III-V semiconductors",

abstract = "Gate stacks containing rare earth oxides of Gd2O3 and Y2O3 as alternative high permittivity gate dielectrics for Si was investigated. The growth and interfaces of thin dielectric films on semiconductors was controlled using ultrahigh vacuum deposition. The interfaces achieved in the gate stacks enabled the electrical, chemical, and structural studies to elucidate the critical materials integration issues for CMOS scaling. The requirements included morphology dependence, interfacial structure and reaction, thermal stability and gate electrode compatibility.",

keywords = "A3. Molecular beam epitaxy, B1. Oxides, B2. Dielectric materials, B3. Field effect transistors",

author = "J. Kwo and M. Hong and B. Busch and Muller, {D. A.} and Chabal, {Y. J.} and Kortan, {A. R.} and Mannaerts, {J. P.} and B. Yang and P. Ye and H. Gossmann and Sergent, {A. M.} and Ng, {K. K.} and J. Bude and Schulte, {W. H.} and E. Garfunkel and T. Gustafsson",

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AU - Kwo, J.

AU - Hong, M.

AU - Busch, B.

AU - Muller, D. A.

AU - Chabal, Y. J.

AU - Kortan, A. R.

AU - Mannaerts, J. P.

AU - Yang, B.

AU - Ye, P.

AU - Gossmann, H.

AU - Sergent, A. M.

AU - Ng, K. K.

AU - Bude, J.

AU - Schulte, W. H.

AU - Garfunkel, E.

AU - Gustafsson, T.

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N2 - Gate stacks containing rare earth oxides of Gd2O3 and Y2O3 as alternative high permittivity gate dielectrics for Si was investigated. The growth and interfaces of thin dielectric films on semiconductors was controlled using ultrahigh vacuum deposition. The interfaces achieved in the gate stacks enabled the electrical, chemical, and structural studies to elucidate the critical materials integration issues for CMOS scaling. The requirements included morphology dependence, interfacial structure and reaction, thermal stability and gate electrode compatibility.

AB - Gate stacks containing rare earth oxides of Gd2O3 and Y2O3 as alternative high permittivity gate dielectrics for Si was investigated. The growth and interfaces of thin dielectric films on semiconductors was controlled using ultrahigh vacuum deposition. The interfaces achieved in the gate stacks enabled the electrical, chemical, and structural studies to elucidate the critical materials integration issues for CMOS scaling. The requirements included morphology dependence, interfacial structure and reaction, thermal stability and gate electrode compatibility.

KW - A3. Molecular beam epitaxy

KW - B1. Oxides

KW - B2. Dielectric materials

KW - B3. Field effect transistors

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JO - Journal of Crystal Growth

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T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

Advances in high κ gate dielectrics for Si and III-V semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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