Abstract
Gate stacks containing rare earth oxides of Gd2O3 and Y2O3 as alternative high permittivity gate dielectrics for Si was investigated. The growth and interfaces of thin dielectric films on semiconductors was controlled using ultrahigh vacuum deposition. The interfaces achieved in the gate stacks enabled the electrical, chemical, and structural studies to elucidate the critical materials integration issues for CMOS scaling. The requirements included morphology dependence, interfacial structure and reaction, thermal stability and gate electrode compatibility.
Original language | English |
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Pages (from-to) | 645-650 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 251 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Apr 1 2003 |
Event | Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: Sep 15 2002 → Sep 20 2002 |
Keywords
- A3. Molecular beam epitaxy
- B1. Oxides
- B2. Dielectric materials
- B3. Field effect transistors
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry