Advances in high κ gate dielectrics for Si and III-V semiconductors

J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, T. Gustafsson

Research output: Contribution to journalConference article

68 Citations (Scopus)

Abstract

Gate stacks containing rare earth oxides of Gd2O3 and Y2O3 as alternative high permittivity gate dielectrics for Si was investigated. The growth and interfaces of thin dielectric films on semiconductors was controlled using ultrahigh vacuum deposition. The interfaces achieved in the gate stacks enabled the electrical, chemical, and structural studies to elucidate the critical materials integration issues for CMOS scaling. The requirements included morphology dependence, interfacial structure and reaction, thermal stability and gate electrode compatibility.

Original languageEnglish
Pages (from-to)645-650
Number of pages6
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
Publication statusPublished - Apr 1 2003
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: Sep 15 2002Sep 20 2002

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Keywords

  • A3. Molecular beam epitaxy
  • B1. Oxides
  • B2. Dielectric materials
  • B3. Field effect transistors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kwo, J., Hong, M., Busch, B., Muller, D. A., Chabal, Y. J., Kortan, A. R., Mannaerts, J. P., Yang, B., Ye, P., Gossmann, H., Sergent, A. M., Ng, K. K., Bude, J., Schulte, W. H., Garfunkel, E., & Gustafsson, T. (2003). Advances in high κ gate dielectrics for Si and III-V semiconductors. Journal of Crystal Growth, 251(1-4), 645-650. https://doi.org/10.1016/S0022-0248(02)02192-9