Advances in high κ gate dielectrics for Si and III-V semiconductors

J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, Eric Garfunkel, T. Gustafsson

Research output: Contribution to journal › Article

67 Citations (Scopus)

Abstract

Gate stacks containing rare earth oxides of Gd2O3 and Y2O3 as alternative high permittivity gate dielectrics for Si was investigated. The growth and interfaces of thin dielectric films on semiconductors was controlled using ultrahigh vacuum deposition. The interfaces achieved in the gate stacks enabled the electrical, chemical, and structural studies to elucidate the critical materials integration issues for CMOS scaling. The requirements included morphology dependence, interfacial structure and reaction, thermal stability and gate electrode compatibility.

Original languageEnglish
Pages (from-to)645-650
Number of pages6
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
Publication statusPublished - Apr 2003

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Strategic materials
Vacuum deposition
Dielectric films
Gate dielectrics
Ultrahigh vacuum
Oxides
Rare earths
Thermodynamic stability
Permittivity
Semiconductor materials
Thin films
Electrodes
vacuum deposition
compatibility
ultrahigh vacuum
CMOS
thermal stability
rare earth elements
permittivity
scaling

Keywords

  • A3. Molecular beam epitaxy
  • B1. Oxides
  • B2. Dielectric materials
  • B3. Field effect transistors

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Kwo, J., Hong, M., Busch, B., Muller, D. A., Chabal, Y. J., Kortan, A. R., ... Gustafsson, T. (2003). Advances in high κ gate dielectrics for Si and III-V semiconductors. Journal of Crystal Growth, 251(1-4), 645-650. https://doi.org/10.1016/S0022-0248(02)02192-9

Advances in high κ gate dielectrics for Si and III-V semiconductors. / Kwo, J.; Hong, M.; Busch, B.; Muller, D. A.; Chabal, Y. J.; Kortan, A. R.; Mannaerts, J. P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A. M.; Ng, K. K.; Bude, J.; Schulte, W. H.; Garfunkel, Eric; Gustafsson, T.

In: Journal of Crystal Growth, Vol. 251, No. 1-4, 04.2003, p. 645-650.

Research output: Contribution to journal › Article

Kwo, J, Hong, M, Busch, B, Muller, DA, Chabal, YJ, Kortan, AR, Mannaerts, JP, Yang, B, Ye, P, Gossmann, H, Sergent, AM, Ng, KK, Bude, J, Schulte, WH, Garfunkel, E & Gustafsson, T 2003, 'Advances in high κ gate dielectrics for Si and III-V semiconductors', Journal of Crystal Growth, vol. 251, no. 1-4, pp. 645-650. https://doi.org/10.1016/S0022-0248(02)02192-9
Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR et al. Advances in high κ gate dielectrics for Si and III-V semiconductors. Journal of Crystal Growth. 2003 Apr;251(1-4):645-650. https://doi.org/10.1016/S0022-0248(02)02192-9
Kwo, J. ; Hong, M. ; Busch, B. ; Muller, D. A. ; Chabal, Y. J. ; Kortan, A. R. ; Mannaerts, J. P. ; Yang, B. ; Ye, P. ; Gossmann, H. ; Sergent, A. M. ; Ng, K. K. ; Bude, J. ; Schulte, W. H. ; Garfunkel, Eric ; Gustafsson, T. / Advances in high κ gate dielectrics for Si and III-V semiconductors. In: Journal of Crystal Growth. 2003 ; Vol. 251, No. 1-4. pp. 645-650.
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AU - Hong, M.

AU - Busch, B.

AU - Muller, D. A.

AU - Chabal, Y. J.

AU - Kortan, A. R.

AU - Mannaerts, J. P.

AU - Yang, B.

AU - Ye, P.

AU - Gossmann, H.

AU - Sergent, A. M.

AU - Ng, K. K.

AU - Bude, J.

AU - Schulte, W. H.

AU - Garfunkel, Eric

AU - Gustafsson, T.

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