Advances in high & kappa gate dielectrics for Si and III-V semiconductors

J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, Eric Garfunkel, T. Gustafsson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Nanoscale device technology is driving intense study of thin dielectric layers on semiconductors. The aggressive scaling of Si CMOS technology calls for identifying high κ dielectrics to replace SiO2 and oxynitrides in gate related applications. The material, requirements for the alternative gate dielectric are very challenging in order to achieve performance comparable to SiO2. Furthermore, there are demanding issues for process integration compatibility. Among several binary oxides proposed the rare earth oxides are attractive candidates based on thermodynamic energy considerations and a high conduction band offset over 2eV. The interest in the rare earth oxide stems from our earlier work on GaAs passivation. The Ga2-xGdxO3 mixed oxides (κ =12) and the Gd2O3 oxides (κ =14) films grown by ultrahigh vacuum deposition from an oxide source formed an excellent insulating barrier with low interfacial state density Dit on the GaAs surface. This discovery has led to the first GaAs based inversion channel MOSFET devices. These dielectrics were also successfully applied to other III-V semiconductors including InGaAs, AlGaAs, InP, and GaN producing MOS diodes and MOSFETs.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages47-48
Number of pages2
ISBN (Print)0780375815, 9780780375819
DOIs
Publication statusPublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period9/15/029/20/02

Fingerprint

Gate dielectrics
Oxides
Rare earths
Vacuum deposition
Ultrahigh vacuum
MOSFET devices
Conduction bands
Passivation
III-V semiconductors
Diodes
Thermodynamics
Semiconductor materials
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Kwo, J., Hong, M., Busch, B., Muller, D. A., Chabal, Y. J., Kortan, A. R., ... Gustafsson, T. (2002). Advances in high & kappa gate dielectrics for Si and III-V semiconductors. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 47-48). [1037753] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037753

Advances in high & kappa gate dielectrics for Si and III-V semiconductors. / Kwo, J.; Hong, M.; Busch, B.; Muller, D. A.; Chabal, Y. J.; Kortan, A. R.; Mannaerts, J. P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A. M.; Ng, K. K.; Bude, J.; Schulte, W. H.; Garfunkel, Eric; Gustafsson, T.

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 47-48 1037753.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kwo, J, Hong, M, Busch, B, Muller, DA, Chabal, YJ, Kortan, AR, Mannaerts, JP, Yang, B, Ye, P, Gossmann, H, Sergent, AM, Ng, KK, Bude, J, Schulte, WH, Garfunkel, E & Gustafsson, T 2002, Advances in high & kappa gate dielectrics for Si and III-V semiconductors. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037753, Institute of Electrical and Electronics Engineers Inc., pp. 47-48, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037753
Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR et al. Advances in high & kappa gate dielectrics for Si and III-V semiconductors. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 47-48. 1037753 https://doi.org/10.1109/MBE.2002.1037753
Kwo, J. ; Hong, M. ; Busch, B. ; Muller, D. A. ; Chabal, Y. J. ; Kortan, A. R. ; Mannaerts, J. P. ; Yang, B. ; Ye, P. ; Gossmann, H. ; Sergent, A. M. ; Ng, K. K. ; Bude, J. ; Schulte, W. H. ; Garfunkel, Eric ; Gustafsson, T. / Advances in high & kappa gate dielectrics for Si and III-V semiconductors. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 47-48
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AU - Kortan, A. R.

AU - Mannaerts, J. P.

AU - Yang, B.

AU - Ye, P.

AU - Gossmann, H.

AU - Sergent, A. M.

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AU - Bude, J.

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AU - Gustafsson, T.

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