Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors based on the indenofluorenebis(dicyanovinylene) core

Hakan Usta, Antonio Facchetti, Tobin J. Marks

Research output: Contribution to journalArticle

228 Citations (Scopus)

Abstract

We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm2/V s in air, low turn-on voltages (∼0 to +5 V), and high on/off ratios of 107-108. These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution.

Original languageEnglish
Pages (from-to)8580-8581
Number of pages2
JournalJournal of the American Chemical Society
Volume130
Issue number27
DOIs
Publication statusPublished - Jul 9 2008

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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