Abstract
We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm2/V s in air, low turn-on voltages (∼0 to +5 V), and high on/off ratios of 107-108. These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution.
| Original language | English |
|---|---|
| Pages (from-to) | 8580-8581 |
| Number of pages | 2 |
| Journal | Journal of the American Chemical Society |
| Volume | 130 |
| Issue number | 27 |
| DOIs | |
| Publication status | Published - Jul 9 2008 |
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ASJC Scopus subject areas
- Chemistry(all)
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Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors based on the indenofluorenebis(dicyanovinylene) core. / Usta, Hakan; Facchetti, Antonio; Marks, Tobin J.
In: Journal of the American Chemical Society, Vol. 130, No. 27, 09.07.2008, p. 8580-8581.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors based on the indenofluorenebis(dicyanovinylene) core
AU - Usta, Hakan
AU - Facchetti, Antonio
AU - Marks, Tobin J
PY - 2008/7/9
Y1 - 2008/7/9
N2 - We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm2/V s in air, low turn-on voltages (∼0 to +5 V), and high on/off ratios of 107-108. These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution.
AB - We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm2/V s in air, low turn-on voltages (∼0 to +5 V), and high on/off ratios of 107-108. These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution.
UR - http://www.scopus.com/inward/record.url?scp=46949093998&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46949093998&partnerID=8YFLogxK
U2 - 10.1021/ja802266u
DO - 10.1021/ja802266u
M3 - Article
VL - 130
SP - 8580
EP - 8581
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 27
ER -