Abstract
We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm2/V s in air, low turn-on voltages (∼0 to +5 V), and high on/off ratios of 107-108. These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution.
Original language | English |
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Pages (from-to) | 8580-8581 |
Number of pages | 2 |
Journal | Journal of the American Chemical Society |
Volume | 130 |
Issue number | 27 |
DOIs | |
Publication status | Published - Jul 9 2008 |
ASJC Scopus subject areas
- Catalysis
- Chemistry(all)
- Biochemistry
- Colloid and Surface Chemistry