ALD growth of Al2O3 on GaAs: Oxide reduction, interface structure and CV performance

H. D. Lee, T. Feng, L. Yu, D. Mastrogiovanni, A. Wan, Eric Garfunkel, T. Gustafsson

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We have studied the effect of the trimethylaluminum (TMA) precursor on the reduction of surface "native" oxides from GaAs substrates using medium energy ion scattering spectroscopy (MEIS), X-ray photoelectron spectroscopy (XPS) and electrical measurements. Our data show that after one single TMA pulse a substantial part of the native oxide is reduced and an oxygen-rich aluminum oxide layer is formed. Al2O3 films grown with the normal atomic layer deposition cycles of TMA and water show that the growth rate of the Al oxide during this initial reduction of the native oxides is faster than the rate once this reduction is completed. Furthermore, the results of C-V measurements of Al2O3/GaAs grown under the same conditions along with post deposition annealing indicate a good quality interface.

Original languageEnglish
Pages (from-to)260-263
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume7
Issue number2
DOIs
Publication statusPublished - 2010

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this