Abstract
We have studied the effect of the trimethylaluminum (TMA) precursor on the reduction of surface "native" oxides from GaAs substrates using medium energy ion scattering spectroscopy (MEIS), X-ray photoelectron spectroscopy (XPS) and electrical measurements. Our data show that after one single TMA pulse a substantial part of the native oxide is reduced and an oxygen-rich aluminum oxide layer is formed. Al2O3 films grown with the normal atomic layer deposition cycles of TMA and water show that the growth rate of the Al oxide during this initial reduction of the native oxides is faster than the rate once this reduction is completed. Furthermore, the results of C-V measurements of Al2O3/GaAs grown under the same conditions along with post deposition annealing indicate a good quality interface.
| Original language | English |
|---|---|
| Pages (from-to) | 260-263 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 7 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2010 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
ALD growth of Al2O3 on GaAs : Oxide reduction, interface structure and CV performance. / Lee, H. D.; Feng, T.; Yu, L.; Mastrogiovanni, D.; Wan, A.; Garfunkel, Eric; Gustafsson, T.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 7, No. 2, 2010, p. 260-263.Research output: Contribution to journal › Article
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TY - JOUR
T1 - ALD growth of Al2O3 on GaAs
T2 - Oxide reduction, interface structure and CV performance
AU - Lee, H. D.
AU - Feng, T.
AU - Yu, L.
AU - Mastrogiovanni, D.
AU - Wan, A.
AU - Garfunkel, Eric
AU - Gustafsson, T.
PY - 2010
Y1 - 2010
N2 - We have studied the effect of the trimethylaluminum (TMA) precursor on the reduction of surface "native" oxides from GaAs substrates using medium energy ion scattering spectroscopy (MEIS), X-ray photoelectron spectroscopy (XPS) and electrical measurements. Our data show that after one single TMA pulse a substantial part of the native oxide is reduced and an oxygen-rich aluminum oxide layer is formed. Al2O3 films grown with the normal atomic layer deposition cycles of TMA and water show that the growth rate of the Al oxide during this initial reduction of the native oxides is faster than the rate once this reduction is completed. Furthermore, the results of C-V measurements of Al2O3/GaAs grown under the same conditions along with post deposition annealing indicate a good quality interface.
AB - We have studied the effect of the trimethylaluminum (TMA) precursor on the reduction of surface "native" oxides from GaAs substrates using medium energy ion scattering spectroscopy (MEIS), X-ray photoelectron spectroscopy (XPS) and electrical measurements. Our data show that after one single TMA pulse a substantial part of the native oxide is reduced and an oxygen-rich aluminum oxide layer is formed. Al2O3 films grown with the normal atomic layer deposition cycles of TMA and water show that the growth rate of the Al oxide during this initial reduction of the native oxides is faster than the rate once this reduction is completed. Furthermore, the results of C-V measurements of Al2O3/GaAs grown under the same conditions along with post deposition annealing indicate a good quality interface.
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U2 - 10.1002/pssc.200982425
DO - 10.1002/pssc.200982425
M3 - Article
VL - 7
SP - 260
EP - 263
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 2
ER -