ALD synthesis of platinum nanoparticles on single-crystal SrTiO3 pretreated with wet chemical etching

Chuandao Wang, Pratik Koirala, Peter C Stair, Laurence Marks

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Formic acid-hydrogen peroxide and buffered hydrogen fluoride-hydrogen peroxide solutions were used to etch single-crystal strontium titanate to remove carbon contamination and increase hydroxyl group density to improve atomic layer deposition onto these materials. X-ray photoelectron spectroscopy indicated that both are effective for carbon contamination removal. However, for increasing hydroxyl group density on the strontium titanate surface, the buffered hydrogen fluoride-hydrogen peroxide is more effective. Transmission electron microscopy and x-ray photoemission show enhanced platinum deposition on the etched strontium titanate surface. These results provide the basis for optimizing atomic layer deposition for other technologically relevant materials.

Original languageEnglish
Pages (from-to)661-665
Number of pages5
JournalApplied Surface Science
Volume422
DOIs
Publication statusPublished - Nov 15 2017

Fingerprint

Wet etching
Strontium
Platinum
Hydrogen peroxide
Hydrogen Peroxide
Hydrofluoric Acid
formic acid
Atomic layer deposition
Single crystals
Nanoparticles
Hydroxyl Radical
Contamination
Carbon
Hydrogen
Formic acid
Photoemission
X ray photoelectron spectroscopy
Transmission electron microscopy
X rays
strontium titanium oxide

Keywords

  • Atomic layer deposition
  • Etch
  • Platinum
  • Surface condition

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

ALD synthesis of platinum nanoparticles on single-crystal SrTiO3 pretreated with wet chemical etching. / Wang, Chuandao; Koirala, Pratik; Stair, Peter C; Marks, Laurence.

In: Applied Surface Science, Vol. 422, 15.11.2017, p. 661-665.

Research output: Contribution to journalArticle

@article{f9cfcf307f424b5fa55720222106d195,
title = "ALD synthesis of platinum nanoparticles on single-crystal SrTiO3 pretreated with wet chemical etching",
abstract = "Formic acid-hydrogen peroxide and buffered hydrogen fluoride-hydrogen peroxide solutions were used to etch single-crystal strontium titanate to remove carbon contamination and increase hydroxyl group density to improve atomic layer deposition onto these materials. X-ray photoelectron spectroscopy indicated that both are effective for carbon contamination removal. However, for increasing hydroxyl group density on the strontium titanate surface, the buffered hydrogen fluoride-hydrogen peroxide is more effective. Transmission electron microscopy and x-ray photoemission show enhanced platinum deposition on the etched strontium titanate surface. These results provide the basis for optimizing atomic layer deposition for other technologically relevant materials.",
keywords = "Atomic layer deposition, Etch, Platinum, Surface condition",
author = "Chuandao Wang and Pratik Koirala and Stair, {Peter C} and Laurence Marks",
year = "2017",
month = "11",
day = "15",
doi = "10.1016/j.apsusc.2017.05.187",
language = "English",
volume = "422",
pages = "661--665",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - ALD synthesis of platinum nanoparticles on single-crystal SrTiO3 pretreated with wet chemical etching

AU - Wang, Chuandao

AU - Koirala, Pratik

AU - Stair, Peter C

AU - Marks, Laurence

PY - 2017/11/15

Y1 - 2017/11/15

N2 - Formic acid-hydrogen peroxide and buffered hydrogen fluoride-hydrogen peroxide solutions were used to etch single-crystal strontium titanate to remove carbon contamination and increase hydroxyl group density to improve atomic layer deposition onto these materials. X-ray photoelectron spectroscopy indicated that both are effective for carbon contamination removal. However, for increasing hydroxyl group density on the strontium titanate surface, the buffered hydrogen fluoride-hydrogen peroxide is more effective. Transmission electron microscopy and x-ray photoemission show enhanced platinum deposition on the etched strontium titanate surface. These results provide the basis for optimizing atomic layer deposition for other technologically relevant materials.

AB - Formic acid-hydrogen peroxide and buffered hydrogen fluoride-hydrogen peroxide solutions were used to etch single-crystal strontium titanate to remove carbon contamination and increase hydroxyl group density to improve atomic layer deposition onto these materials. X-ray photoelectron spectroscopy indicated that both are effective for carbon contamination removal. However, for increasing hydroxyl group density on the strontium titanate surface, the buffered hydrogen fluoride-hydrogen peroxide is more effective. Transmission electron microscopy and x-ray photoemission show enhanced platinum deposition on the etched strontium titanate surface. These results provide the basis for optimizing atomic layer deposition for other technologically relevant materials.

KW - Atomic layer deposition

KW - Etch

KW - Platinum

KW - Surface condition

UR - http://www.scopus.com/inward/record.url?scp=85020667605&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85020667605&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2017.05.187

DO - 10.1016/j.apsusc.2017.05.187

M3 - Article

AN - SCOPUS:85020667605

VL - 422

SP - 661

EP - 665

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -