AlGaAs high-power short-wavelength superluminescent integrated source

Yongsheng Zhao, Guotong Du, Weihua Han, Yanping Fu, Xuemei Li, Junfeng Song, Xiuying Jiang, Dingsan Gao, G. Devane, K. A. Stair, Robert P. H. Chang

Research output: Contribution to journalArticle

Abstract

In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.

Original languageEnglish
Pages (from-to)566-567
Number of pages2
JournalProgress in Natural Science
Volume8
Issue number5
Publication statusPublished - 1998

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Keywords

  • Integrated source
  • Optical amplifier
  • Superluminescent diode

ASJC Scopus subject areas

  • General

Cite this

Zhao, Y., Du, G., Han, W., Fu, Y., Li, X., Song, J., Jiang, X., Gao, D., Devane, G., Stair, K. A., & Chang, R. P. H. (1998). AlGaAs high-power short-wavelength superluminescent integrated source. Progress in Natural Science, 8(5), 566-567.