Abstract
In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.
| Original language | English |
|---|---|
| Pages (from-to) | 566-567 |
| Number of pages | 2 |
| Journal | Progress in Natural Science |
| Volume | 8 |
| Issue number | 5 |
| Publication status | Published - 1998 |
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Keywords
- Integrated source
- Optical amplifier
- Superluminescent diode
ASJC Scopus subject areas
- General
Cite this
AlGaAs high-power short-wavelength superluminescent integrated source. / Zhao, Yongsheng; Du, Guotong; Han, Weihua; Fu, Yanping; Li, Xuemei; Song, Junfeng; Jiang, Xiuying; Gao, Dingsan; Devane, G.; Stair, K. A.; Chang, Robert P. H.
In: Progress in Natural Science, Vol. 8, No. 5, 1998, p. 566-567.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - AlGaAs high-power short-wavelength superluminescent integrated source
AU - Zhao, Yongsheng
AU - Du, Guotong
AU - Han, Weihua
AU - Fu, Yanping
AU - Li, Xuemei
AU - Song, Junfeng
AU - Jiang, Xiuying
AU - Gao, Dingsan
AU - Devane, G.
AU - Stair, K. A.
AU - Chang, Robert P. H.
PY - 1998
Y1 - 1998
N2 - In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.
AB - In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.
KW - Integrated source
KW - Optical amplifier
KW - Superluminescent diode
UR - http://www.scopus.com/inward/record.url?scp=20944436637&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=20944436637&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:20944436637
VL - 8
SP - 566
EP - 567
JO - Progress in Natural Science: Materials International
JF - Progress in Natural Science: Materials International
SN - 1002-0071
IS - 5
ER -