Abstract
In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.
| Original language | English |
|---|---|
| Pages (from-to) | 566-567 |
| Number of pages | 2 |
| Journal | Progress in Natural Science |
| Volume | 8 |
| Issue number | 5 |
| Publication status | Published - 1998 |
Keywords
- Integrated source
- Optical amplifier
- Superluminescent diode
ASJC Scopus subject areas
- General
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Zhao, Y., Du, G., Han, W., Fu, Y., Li, X., Song, J., Jiang, X., Gao, D., Devane, G., Stair, K. A., & Chang, R. P. H. (1998). AlGaAs high-power short-wavelength superluminescent integrated source. Progress in Natural Science, 8(5), 566-567.