AlGaAs high-power short-wavelength superluminescent integrated source

Yongsheng Zhao; Guotong Du; Weihua Han; Yanping Fu; Xuemei Li; Junfeng Song; Xiuying Jiang; Dingsan Gao; G. Devane; K. A. Stair; Robert P. H. Chang

AlGaAs high-power short-wavelength superluminescent integrated source

Yongsheng Zhao, Guotong Du, Weihua Han, Yanping Fu, Xuemei Li, Junfeng Song, Xiuying Jiang, Dingsan Gao, G. Devane, K. A. Stair, Robert P. H. Chang

Northwestern University

Research output: Contribution to journal › Article › peer-review

Abstract

In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.

Original language	English
Pages (from-to)	566-567
Number of pages	2
Journal	Progress in Natural Science
Volume	8
Issue number	5
Publication status	Published - 1998

Keywords

Integrated source
Optical amplifier
Superluminescent diode

ASJC Scopus subject areas

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title = "AlGaAs high-power short-wavelength superluminescent integrated source",

abstract = "In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.",

keywords = "Integrated source, Optical amplifier, Superluminescent diode",

author = "Yongsheng Zhao and Guotong Du and Weihua Han and Yanping Fu and Xuemei Li and Junfeng Song and Xiuying Jiang and Dingsan Gao and G. Devane and Stair, {K. A.} and Chang, {Robert P. H.}",

year = "1998",

language = "English",

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journal = "Progress in Natural Science: Materials International",

issn = "1002-0071",

publisher = "Chinese Materials Research Society",

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T1 - AlGaAs high-power short-wavelength superluminescent integrated source

AU - Zhao, Yongsheng

AU - Du, Guotong

AU - Han, Weihua

AU - Fu, Yanping

AU - Li, Xuemei

AU - Song, Junfeng

AU - Jiang, Xiuying

AU - Gao, Dingsan

AU - Devane, G.

AU - Stair, K. A.

AU - Chang, Robert P. H.

PY - 1998

Y1 - 1998

N2 - In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.

AB - In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.

KW - Integrated source

KW - Optical amplifier

KW - Superluminescent diode

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EP - 567

JO - Progress in Natural Science: Materials International

JF - Progress in Natural Science: Materials International

SN - 1002-0071

IS - 5

ER -

AlGaAs high-power short-wavelength superluminescent integrated source

Abstract

Keywords

ASJC Scopus subject areas

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