Abstract
In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.
Original language | English |
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Pages (from-to) | 566-567 |
Number of pages | 2 |
Journal | Progress in Natural Science |
Volume | 8 |
Issue number | 5 |
Publication status | Published - 1998 |
Keywords
- Integrated source
- Optical amplifier
- Superluminescent diode
ASJC Scopus subject areas
- General