AlGaAs short wavelength integrated superluminescent source

Yongsheng Zhao, Zhongzhe Sun, Xuemei Li, Junfeng Song, Zhiling Wang, Xiuying Jiang, Guotong Du, Shengli Wu, Gregory Devane, Kathleen A. Stair, Robert P. H. Chang

Research output: Contribution to journalArticle

Abstract

A novel semiconductor integrated source-AlGaAs Short wavelength superluminescent integrated diode had been suggested and demonstrated. It used direct coupling of the superluminescent diode with the semiconductor amplifier. An AlGaAs SQW heterostructure wafer and gain-guide of oxide-stripe were used in the device. 57 mW superluminescent output power with 20 nm special width (FWHM) are obtained. When the input current of the superluminescent diode is greater than 100 mA, the light-current curve is linearly increased, and it is beneficial to amplify and modulate the small signals. The optical gain of the amplifier in the integrated device is about 21 dB.

Original languageEnglish
Pages (from-to)789-792
Number of pages4
JournalGuangxue Xuebao/Acta Optica Sinica
Volume18
Issue number6
Publication statusPublished - 1998

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy(all)
  • Atomic and Molecular Physics, and Optics

Cite this

Zhao, Y., Sun, Z., Li, X., Song, J., Wang, Z., Jiang, X., Du, G., Wu, S., Devane, G., Stair, K. A., & Chang, R. P. H. (1998). AlGaAs short wavelength integrated superluminescent source. Guangxue Xuebao/Acta Optica Sinica, 18(6), 789-792.