Alkylation of Si surfaces using a two-step halogenation/Grignard route

Ashish Bansal; Xiuling Li; Iver Lauermann; Nathan S Lewis; Sang I. Yi; W. H. Weinberg

doi:10.1021/ja960348n

Alkylation of Si surfaces using a two-step halogenation/Grignard route

Ashish Bansal, Xiuling Li, Iver Lauermann, Nathan S Lewis, Sang I. Yi, W. H. Weinberg

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

400 Citations (Scopus)

Original language	English
Pages (from-to)	7225-7226
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	118
Issue number	30
DOIs	https://doi.org/10.1021/ja960348n
Publication status	Published - Jul 31 1996

ASJC Scopus subject areas

Chemistry(all)

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10.1021/ja960348n

Cite this

@article{38c0aa1704924b5bb86e9f161accabf5,

title = "Alkylation of Si surfaces using a two-step halogenation/Grignard route",

author = "Ashish Bansal and Xiuling Li and Iver Lauermann and Lewis, {Nathan S} and Yi, {Sang I.} and Weinberg, {W. H.}",

year = "1996",

month = jul,

day = "31",

doi = "10.1021/ja960348n",

language = "English",

volume = "118",

pages = "7225--7226",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "30",

}

TY - JOUR

T1 - Alkylation of Si surfaces using a two-step halogenation/Grignard route

AU - Bansal, Ashish

AU - Li, Xiuling

AU - Lauermann, Iver

AU - Lewis, Nathan S

AU - Yi, Sang I.

AU - Weinberg, W. H.

PY - 1996/7/31

Y1 - 1996/7/31

UR - http://www.scopus.com/inward/record.url?scp=0029780707&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029780707&partnerID=8YFLogxK

U2 - 10.1021/ja960348n

DO - 10.1021/ja960348n

M3 - Article

AN - SCOPUS:0029780707

VL - 118

SP - 7225

EP - 7226

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 30

ER -