Alkylation of Si surfaces using a two-step halogenation/Grignard route

Ashish Bansal, Xiuling Li, Iver Lauermann, Nathan S Lewis, Sang I. Yi, W. H. Weinberg

Research output: Contribution to journal › Article

393 Citations (Scopus)
Original languageEnglish
Pages (from-to)7225-7226
Number of pages2
JournalJournal of the American Chemical Society
Volume118
Issue number30
DOIs
Publication statusPublished - Jul 31 1996

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Halogenation
Alkylation

ASJC Scopus subject areas

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Alkylation of Si surfaces using a two-step halogenation/Grignard route. / Bansal, Ashish; Li, Xiuling; Lauermann, Iver; Lewis, Nathan S; Yi, Sang I.; Weinberg, W. H.

In: Journal of the American Chemical Society, Vol. 118, No. 30, 31.07.1996, p. 7225-7226.

Research output: Contribution to journal › Article

Bansal, A, Li, X, Lauermann, I, Lewis, NS, Yi, SI & Weinberg, WH 1996, 'Alkylation of Si surfaces using a two-step halogenation/Grignard route', Journal of the American Chemical Society, vol. 118, no. 30, pp. 7225-7226. https://doi.org/10.1021/ja960348n
Bansal A, Li X, Lauermann I, Lewis NS, Yi SI, Weinberg WH. Alkylation of Si surfaces using a two-step halogenation/Grignard route. Journal of the American Chemical Society. 1996 Jul 31;118(30):7225-7226. https://doi.org/10.1021/ja960348n
Bansal, Ashish ; Li, Xiuling ; Lauermann, Iver ; Lewis, Nathan S ; Yi, Sang I. ; Weinberg, W. H. / Alkylation of Si surfaces using a two-step halogenation/Grignard route. In: Journal of the American Chemical Society. 1996 ; Vol. 118, No. 30. pp. 7225-7226.
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