Alkylation of Si surfaces using a two-step halogenation/Grignard route

Ashish Bansal; Xiuling Li; Iver Lauermann; Nathan S Lewis; Sang I. Yi; W. H. Weinberg

doi:10.1021/ja960348n

Alkylation of Si surfaces using a two-step halogenation/Grignard route

Ashish Bansal, Xiuling Li, Iver Lauermann, Nathan S Lewis, Sang I. Yi, W. H. Weinberg

California Institute of Technology

Research output: Contribution to journal › Article

394 Citations (Scopus)

Original language	English
Pages (from-to)	7225-7226
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	118
Issue number	30
DOIs	https://doi.org/10.1021/ja960348n
Publication status	Published - Jul 31 1996

ASJC Scopus subject areas

Chemistry(all)

Cite this

Bansal, A., Li, X., Lauermann, I., Lewis, N. S., Yi, S. I., & Weinberg, W. H. (1996). Alkylation of Si surfaces using a two-step halogenation/Grignard route. Journal of the American Chemical Society, 118(30), 7225-7226. https://doi.org/10.1021/ja960348n

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10.1021/ja960348n