Alkylation of Si surfaces using a two-step halogenation/Grignard route

Ashish Bansal; Xiuling Li; Iver Lauermann; Nathan S Lewis; Sang I. Yi; W. H. Weinberg

doi:10.1021/ja960348n

Alkylation of Si surfaces using a two-step halogenation/Grignard route

Ashish Bansal, Xiuling Li, Iver Lauermann, Nathan S Lewis, Sang I. Yi, W. H. Weinberg

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

401 Citations (Scopus)

Original language	English
Pages (from-to)	7225-7226
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	118
Issue number	30
DOIs	https://doi.org/10.1021/ja960348n
Publication status	Published - Jul 31 1996

ASJC Scopus subject areas

Chemistry(all)

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10.1021/ja960348n

Cite this

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title = "Alkylation of Si surfaces using a two-step halogenation/Grignard route",

author = "Ashish Bansal and Xiuling Li and Iver Lauermann and Lewis, {Nathan S} and Yi, {Sang I.} and Weinberg, {W. H.}",

year = "1996",

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language = "English",

volume = "118",

pages = "7225--7226",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

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AU - Lauermann, Iver

AU - Lewis, Nathan S

AU - Yi, Sang I.

AU - Weinberg, W. H.

PY - 1996/7/31

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JO - Journal of the American Chemical Society

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