All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics

Jun Liu, D. Bruce Buchholz, Jonathan W. Hennek, Robert P. H. Chang, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

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Abstract

Optically transparent and mechanically flexible thin-film transistors (TF-TFTs) composed exclusively of amorphous metal oxide films are fabricated on plastic substrates by combining an amorphous Ta2O5/ SiOx bilayer transparent oxide insulator (TOI) gate dielectric with an amorphous zinc-indium-tin oxide (a-ZITO) transparent oxide semiconductor (TOS) channel and a-ZITO transparent oxide conductor (TOC) electrodes. The bilayer gate dielectric is fabricated by the post-cross-linking of vapor-deposited hexachlorodisiloxane-derived films to form thin SiOx layers (v-SiOx) on amorphous Ta2O5 (a-Ta 2O5) films grown by ion-assisted deposition at room temperature. The a-Ta2O5/v-SiOx bilayer TOI dielectric integrates the large capacitance of the high dielectric constant a-Ta2O5 layer with the excellent dielectric/semiconductor interfacial compatibility of the v-SiOx layer in a-ZITO TOS-based TF-TFTs. These all-amorphous-oxide TF-TFTs, having a channel length and width of 100 and 2000 μm, respectively, perform far better than a-Ta 2O5-only devices and exhibit saturation-regime field-effect mobilities of ∼20 cm2/V·s, on-currents >10-4 A, and current on-off ratios >105. These TFTs operate at low voltages (∼4.0 V) and exhibit good visible-region optical transparency and excellent mechanical flexibility.

Original languageEnglish
Pages (from-to)11934-11942
Number of pages9
JournalJournal of the American Chemical Society
Volume132
Issue number34
DOIs
Publication statusPublished - Sep 1 2010

Fingerprint

Gate dielectrics
Thin film transistors
Oxides
Semiconductors
Tin oxides
Indium
Zinc
Amorphous films
Transparency
Plastics
Oxide films
Electrodes
Permittivity
Capacitance
Metals
Vapors
Ions
Semiconductor materials
Equipment and Supplies
Temperature

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics. / Liu, Jun; Buchholz, D. Bruce; Hennek, Jonathan W.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 132, No. 34, 01.09.2010, p. 11934-11942.

Research output: Contribution to journalArticle

Liu, Jun ; Buchholz, D. Bruce ; Hennek, Jonathan W. ; Chang, Robert P. H. ; Facchetti, Antonio ; Marks, Tobin J. / All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics. In: Journal of the American Chemical Society. 2010 ; Vol. 132, No. 34. pp. 11934-11942.
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