TY - JOUR
T1 - All-Electrical Determination of Crystal Orientation in Anisotropic Two-Dimensional Materials
AU - Peng, Lintao
AU - Wells, Spencer A.
AU - Ryder, Christopher R.
AU - Hersam, Mark C.
AU - Grayson, Matthew
N1 - Funding Information:
This research was supported by the Air Force Office of Scientific Research (FA95501510247 and FA05501510377) and the National Science Foundation Materials Research Science and Engineering Center (MRSEC) of Northwestern University (DMR-1121262 and DMR-1720139). This work made use of the EPIC facility of Northwestern University’s NUANCE Center, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205); the MRSEC program (NSF DMR-1121262 and DMR-1720139) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN.
PY - 2018/2/21
Y1 - 2018/2/21
N2 - The crystal orientation of an exfoliated black phosphorous flake is determined by purely electrical means. A sequence of three resistance measurements on an arbitrarily shaped flake with five contacts determines the three independent components of the anisotropic in-plane resistivity tensor, thereby revealing the crystal axes. The resistivity anisotropy ratio decreases linearly with increasing temperature T and carrier density reaching a maximum ratio of 3.0 at low temperatures and densities, while mobility indicates impurity scattering at low T and acoustic phonon scattering at high T.
AB - The crystal orientation of an exfoliated black phosphorous flake is determined by purely electrical means. A sequence of three resistance measurements on an arbitrarily shaped flake with five contacts determines the three independent components of the anisotropic in-plane resistivity tensor, thereby revealing the crystal axes. The resistivity anisotropy ratio decreases linearly with increasing temperature T and carrier density reaching a maximum ratio of 3.0 at low temperatures and densities, while mobility indicates impurity scattering at low T and acoustic phonon scattering at high T.
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U2 - 10.1103/PhysRevLett.120.086801
DO - 10.1103/PhysRevLett.120.086801
M3 - Article
C2 - 29542991
AN - SCOPUS:85042935365
VL - 120
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 8
M1 - 086801
ER -