Abstract
Nanopatterning of H:Si surfaces was performed using conductive BDD-coated Atomic Force Microscopy (AFM) probes under ambient conditions. The patterned features exhibited chemical etching behavior characteristic of AFM local oxidation, and inspite of relatively high current flow, oxidation was observed to occur via an electric-field-induced oxidation mechanism during nanopatterning. The oxide rate for biases up to 5 V followed a power-of-time law consistent with space-charge limited growth, while the nanolithographic figures of merit for conductive BDD-coated AFM probes were quantified including patterning at low threshold voltage of 1 V. The results coupled with the high wear resistance of diamond establish conductive BDD-coated AFM probes as promosing candidates for the high-throughput nanopatterning applications.
| Original language | English |
|---|---|
| Pages (from-to) | 2053-2056 |
| Number of pages | 4 |
| Journal | Small |
| Volume | 3 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 2007 |
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Keywords
- Atomic force microscopy
- Diamond
- Nanolithography
- Nanopatterning
- Silicon
ASJC Scopus subject areas
- Biomaterials
- Engineering (miscellaneous)
- Biotechnology
- Medicine(all)
Cite this
Ambient AFM nanoscale oxidation of hydrogen-passivated silicon with conductive-diamond-coated probes. / Schmitz, Matthew J.; Kinser, C. Reagan; Cortes, Norma E.; Hersam, Mark C.
In: Small, Vol. 3, No. 12, 12.2007, p. 2053-2056.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ambient AFM nanoscale oxidation of hydrogen-passivated silicon with conductive-diamond-coated probes
AU - Schmitz, Matthew J.
AU - Kinser, C. Reagan
AU - Cortes, Norma E.
AU - Hersam, Mark C.
PY - 2007/12
Y1 - 2007/12
N2 - Nanopatterning of H:Si surfaces was performed using conductive BDD-coated Atomic Force Microscopy (AFM) probes under ambient conditions. The patterned features exhibited chemical etching behavior characteristic of AFM local oxidation, and inspite of relatively high current flow, oxidation was observed to occur via an electric-field-induced oxidation mechanism during nanopatterning. The oxide rate for biases up to 5 V followed a power-of-time law consistent with space-charge limited growth, while the nanolithographic figures of merit for conductive BDD-coated AFM probes were quantified including patterning at low threshold voltage of 1 V. The results coupled with the high wear resistance of diamond establish conductive BDD-coated AFM probes as promosing candidates for the high-throughput nanopatterning applications.
AB - Nanopatterning of H:Si surfaces was performed using conductive BDD-coated Atomic Force Microscopy (AFM) probes under ambient conditions. The patterned features exhibited chemical etching behavior characteristic of AFM local oxidation, and inspite of relatively high current flow, oxidation was observed to occur via an electric-field-induced oxidation mechanism during nanopatterning. The oxide rate for biases up to 5 V followed a power-of-time law consistent with space-charge limited growth, while the nanolithographic figures of merit for conductive BDD-coated AFM probes were quantified including patterning at low threshold voltage of 1 V. The results coupled with the high wear resistance of diamond establish conductive BDD-coated AFM probes as promosing candidates for the high-throughput nanopatterning applications.
KW - Atomic force microscopy
KW - Diamond
KW - Nanolithography
KW - Nanopatterning
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=37249090155&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=37249090155&partnerID=8YFLogxK
U2 - 10.1002/smll.200700414
DO - 10.1002/smll.200700414
M3 - Article
VL - 3
SP - 2053
EP - 2056
JO - Small
JF - Small
SN - 1613-6810
IS - 12
ER -