Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters

J. Trey Diulus; Ryan T. Frederick; Mengjun Li; Danielle C. Hutchison; Morgan R. Olsen; Igor Lyubinetsky; Líney Árnadóttir; Eric L. Garfunkel; May Nyman; Hirohito Ogasawara; Gregory S. Herman

doi:10.1021/acsami.8b19302

Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters

J. Trey Diulus, Ryan T. Frederick, Mengjun Li, Danielle C. Hutchison, Morgan R. Olsen, Igor Lyubinetsky, Líney Árnadóttir, Eric L. Garfunkel, May Nyman, Hirohito Ogasawara, Gregory S. Herman

Rutgers University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Advances in extreme ultraviolet (EUV) photolithography require the development of next-generation resists that allow high-volume nanomanufacturing with a single nanometer patterning resolution. Organotin-based photoresists have demonstrated nanopatterning with high resolution, high sensitivity, and low-line edge roughness. However, very little is known regarding the detailed reaction mechanisms that lead to radiation-induced solubility transitions. In this study, we investigate the interaction of soft X-ray radiation with organotin clusters to better understand radiation-induced chemistries associated with EUV lithography. Butyltin Keggin clusters (β-NaSn ₁₃ ) were used as a model organotin photoresist, and characterization was performed using ambient-pressure X-ray photoelectron spectroscopy. The changes in relative atomic concentrations and associated chemical states in β-NaSn ₁₃ resists were evaluated after exposure to radiation for a range of ambient conditions and photon energies. A significant reduction in the C 1s signal versus exposure time was observed, which corresponds to the radiation-induced homolytic cleavage of the butyltin bond in the β-NaSn ₁₃ clusters. To improve the resist sensitivity, we evaluated the effect of oxygen partial pressure during radiation exposures. We found that both photon energy and oxygen partial pressure had a strong influence on the butyl group desorption rate. These studies advance the understanding of radiation-induced processes in β-NaSn ₁₃ photoresists and provide mechanistic insights for EUV photolithography.

Original language	English
Pages (from-to)	2526-2534
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	11
Issue number	2
DOIs	https://doi.org/10.1021/acsami.8b19302
Publication status	Published - Jan 16 2019

Keywords

APXPS
EUV lithography
XAS
nanocluster
organotin-based photoresist

ASJC Scopus subject areas

Materials Science(all)

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10.1021/acsami.8b19302

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Diulus, J. T., Frederick, R. T., Li, M., Hutchison, D. C., Olsen, M. R., Lyubinetsky, I., Árnadóttir, L., Garfunkel, E. L., Nyman, M., Ogasawara, H., & Herman, G. S. (2019). Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters. ACS Applied Materials and Interfaces, 11(2), 2526-2534. https://doi.org/10.1021/acsami.8b19302

Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters. / Diulus, J. Trey; Frederick, Ryan T.; Li, Mengjun; Hutchison, Danielle C.; Olsen, Morgan R.; Lyubinetsky, Igor; Árnadóttir, Líney; Garfunkel, Eric L.; Nyman, May; Ogasawara, Hirohito; Herman, Gregory S.

In: ACS Applied Materials and Interfaces, Vol. 11, No. 2, 16.01.2019, p. 2526-2534.

Research output: Contribution to journal › Article › peer-review

Diulus, JT, Frederick, RT, Li, M, Hutchison, DC, Olsen, MR, Lyubinetsky, I, Árnadóttir, L, Garfunkel, EL, Nyman, M, Ogasawara, H & Herman, GS 2019, 'Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters', ACS Applied Materials and Interfaces, vol. 11, no. 2, pp. 2526-2534. https://doi.org/10.1021/acsami.8b19302

Diulus, J. Trey ; Frederick, Ryan T. ; Li, Mengjun ; Hutchison, Danielle C. ; Olsen, Morgan R. ; Lyubinetsky, Igor ; Árnadóttir, Líney ; Garfunkel, Eric L. ; Nyman, May ; Ogasawara, Hirohito ; Herman, Gregory S. / Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters. In: ACS Applied Materials and Interfaces. 2019 ; Vol. 11, No. 2. pp. 2526-2534.

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title = "Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters",

abstract = " Advances in extreme ultraviolet (EUV) photolithography require the development of next-generation resists that allow high-volume nanomanufacturing with a single nanometer patterning resolution. Organotin-based photoresists have demonstrated nanopatterning with high resolution, high sensitivity, and low-line edge roughness. However, very little is known regarding the detailed reaction mechanisms that lead to radiation-induced solubility transitions. In this study, we investigate the interaction of soft X-ray radiation with organotin clusters to better understand radiation-induced chemistries associated with EUV lithography. Butyltin Keggin clusters (β-NaSn 13 ) were used as a model organotin photoresist, and characterization was performed using ambient-pressure X-ray photoelectron spectroscopy. The changes in relative atomic concentrations and associated chemical states in β-NaSn 13 resists were evaluated after exposure to radiation for a range of ambient conditions and photon energies. A significant reduction in the C 1s signal versus exposure time was observed, which corresponds to the radiation-induced homolytic cleavage of the butyltin bond in the β-NaSn 13 clusters. To improve the resist sensitivity, we evaluated the effect of oxygen partial pressure during radiation exposures. We found that both photon energy and oxygen partial pressure had a strong influence on the butyl group desorption rate. These studies advance the understanding of radiation-induced processes in β-NaSn 13 photoresists and provide mechanistic insights for EUV photolithography. ",

keywords = "APXPS, EUV lithography, XAS, nanocluster, organotin-based photoresist",

author = "Diulus, {J. Trey} and Frederick, {Ryan T.} and Mengjun Li and Hutchison, {Danielle C.} and Olsen, {Morgan R.} and Igor Lyubinetsky and L{\'i}ney {\'A}rnad{\'o}ttir and Garfunkel, {Eric L.} and May Nyman and Hirohito Ogasawara and Herman, {Gregory S.}",

note = "Funding Information: L{\'i}neyAORCI{\'D}rnadottir{\':} 0000-0001-9013-4173 May Nyman: 0000-0002-1787-0518 Hirohito Ogasawara: 0000-0001-5338-1079 Gregory S. Herman: 0000-0002-7901-8451 Author Contributions The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript. Funding This research was funded by the Semiconductor Research Corp. (SRC) Contract Number 2013-OJ-2438 and the Center for Sustainable Materials Chemistry (CSMC) supported by the U.S. National Science Foundation under grant number CHE-1606982. This work was performed, in part, at the Northwest Nanotechnology Infrastructure, a member of the National Nanotechnology Coordinated Infrastructure, which is supported by the National Science Foundation under grant number NNCI-1542101. Use of the SSRL, SLAC National Accelerator Laboratory, is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under contract no. DE-AC02-76SF00515. Notes The authors declare no competing financial interest.",

year = "2019",

month = jan,

day = "16",

doi = "10.1021/acsami.8b19302",

language = "English",

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T1 - Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters

AU - Diulus, J. Trey

AU - Frederick, Ryan T.

AU - Li, Mengjun

AU - Hutchison, Danielle C.

AU - Olsen, Morgan R.

AU - Lyubinetsky, Igor

AU - Árnadóttir, Líney

AU - Garfunkel, Eric L.

AU - Nyman, May

AU - Ogasawara, Hirohito

AU - Herman, Gregory S.

N1 - Funding Information: LíneyAORCID́rnadottir:́ 0000-0001-9013-4173 May Nyman: 0000-0002-1787-0518 Hirohito Ogasawara: 0000-0001-5338-1079 Gregory S. Herman: 0000-0002-7901-8451 Author Contributions The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript. Funding This research was funded by the Semiconductor Research Corp. (SRC) Contract Number 2013-OJ-2438 and the Center for Sustainable Materials Chemistry (CSMC) supported by the U.S. National Science Foundation under grant number CHE-1606982. This work was performed, in part, at the Northwest Nanotechnology Infrastructure, a member of the National Nanotechnology Coordinated Infrastructure, which is supported by the National Science Foundation under grant number NNCI-1542101. Use of the SSRL, SLAC National Accelerator Laboratory, is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under contract no. DE-AC02-76SF00515. Notes The authors declare no competing financial interest.

PY - 2019/1/16

Y1 - 2019/1/16

N2 - Advances in extreme ultraviolet (EUV) photolithography require the development of next-generation resists that allow high-volume nanomanufacturing with a single nanometer patterning resolution. Organotin-based photoresists have demonstrated nanopatterning with high resolution, high sensitivity, and low-line edge roughness. However, very little is known regarding the detailed reaction mechanisms that lead to radiation-induced solubility transitions. In this study, we investigate the interaction of soft X-ray radiation with organotin clusters to better understand radiation-induced chemistries associated with EUV lithography. Butyltin Keggin clusters (β-NaSn 13 ) were used as a model organotin photoresist, and characterization was performed using ambient-pressure X-ray photoelectron spectroscopy. The changes in relative atomic concentrations and associated chemical states in β-NaSn 13 resists were evaluated after exposure to radiation for a range of ambient conditions and photon energies. A significant reduction in the C 1s signal versus exposure time was observed, which corresponds to the radiation-induced homolytic cleavage of the butyltin bond in the β-NaSn 13 clusters. To improve the resist sensitivity, we evaluated the effect of oxygen partial pressure during radiation exposures. We found that both photon energy and oxygen partial pressure had a strong influence on the butyl group desorption rate. These studies advance the understanding of radiation-induced processes in β-NaSn 13 photoresists and provide mechanistic insights for EUV photolithography.

AB - Advances in extreme ultraviolet (EUV) photolithography require the development of next-generation resists that allow high-volume nanomanufacturing with a single nanometer patterning resolution. Organotin-based photoresists have demonstrated nanopatterning with high resolution, high sensitivity, and low-line edge roughness. However, very little is known regarding the detailed reaction mechanisms that lead to radiation-induced solubility transitions. In this study, we investigate the interaction of soft X-ray radiation with organotin clusters to better understand radiation-induced chemistries associated with EUV lithography. Butyltin Keggin clusters (β-NaSn 13 ) were used as a model organotin photoresist, and characterization was performed using ambient-pressure X-ray photoelectron spectroscopy. The changes in relative atomic concentrations and associated chemical states in β-NaSn 13 resists were evaluated after exposure to radiation for a range of ambient conditions and photon energies. A significant reduction in the C 1s signal versus exposure time was observed, which corresponds to the radiation-induced homolytic cleavage of the butyltin bond in the β-NaSn 13 clusters. To improve the resist sensitivity, we evaluated the effect of oxygen partial pressure during radiation exposures. We found that both photon energy and oxygen partial pressure had a strong influence on the butyl group desorption rate. These studies advance the understanding of radiation-induced processes in β-NaSn 13 photoresists and provide mechanistic insights for EUV photolithography.

KW - APXPS

KW - EUV lithography

KW - XAS

KW - nanocluster

KW - organotin-based photoresist

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