Abstract
Advances in extreme ultraviolet (EUV) photolithography require the development of next-generation resists that allow high-volume nanomanufacturing with a single nanometer patterning resolution. Organotin-based photoresists have demonstrated nanopatterning with high resolution, high sensitivity, and low-line edge roughness. However, very little is known regarding the detailed reaction mechanisms that lead to radiation-induced solubility transitions. In this study, we investigate the interaction of soft X-ray radiation with organotin clusters to better understand radiation-induced chemistries associated with EUV lithography. Butyltin Keggin clusters (β-NaSn 13 ) were used as a model organotin photoresist, and characterization was performed using ambient-pressure X-ray photoelectron spectroscopy. The changes in relative atomic concentrations and associated chemical states in β-NaSn 13 resists were evaluated after exposure to radiation for a range of ambient conditions and photon energies. A significant reduction in the C 1s signal versus exposure time was observed, which corresponds to the radiation-induced homolytic cleavage of the butyltin bond in the β-NaSn 13 clusters. To improve the resist sensitivity, we evaluated the effect of oxygen partial pressure during radiation exposures. We found that both photon energy and oxygen partial pressure had a strong influence on the butyl group desorption rate. These studies advance the understanding of radiation-induced processes in β-NaSn 13 photoresists and provide mechanistic insights for EUV photolithography.
| Original language | English |
|---|---|
| Pages (from-to) | 2526-2534 |
| Number of pages | 9 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 11 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jan 16 2019 |
Fingerprint
Keywords
- APXPS
- EUV lithography
- nanocluster
- organotin-based photoresist
- XAS
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters. / Diulus, J. Trey; Frederick, Ryan T.; Li, Mengjun; Hutchison, Danielle C.; Olsen, Morgan R.; Lyubinetsky, Igor; Árnadóttir, Líney; Garfunkel, Eric; Nyman, May; Ogasawara, Hirohito; Herman, Gregory S.
In: ACS Applied Materials and Interfaces, Vol. 11, No. 2, 16.01.2019, p. 2526-2534.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ambient-Pressure X-ray Photoelectron Spectroscopy Characterization of Radiation-Induced Chemistries of Organotin Clusters
AU - Diulus, J. Trey
AU - Frederick, Ryan T.
AU - Li, Mengjun
AU - Hutchison, Danielle C.
AU - Olsen, Morgan R.
AU - Lyubinetsky, Igor
AU - Árnadóttir, Líney
AU - Garfunkel, Eric
AU - Nyman, May
AU - Ogasawara, Hirohito
AU - Herman, Gregory S.
PY - 2019/1/16
Y1 - 2019/1/16
N2 - Advances in extreme ultraviolet (EUV) photolithography require the development of next-generation resists that allow high-volume nanomanufacturing with a single nanometer patterning resolution. Organotin-based photoresists have demonstrated nanopatterning with high resolution, high sensitivity, and low-line edge roughness. However, very little is known regarding the detailed reaction mechanisms that lead to radiation-induced solubility transitions. In this study, we investigate the interaction of soft X-ray radiation with organotin clusters to better understand radiation-induced chemistries associated with EUV lithography. Butyltin Keggin clusters (β-NaSn 13 ) were used as a model organotin photoresist, and characterization was performed using ambient-pressure X-ray photoelectron spectroscopy. The changes in relative atomic concentrations and associated chemical states in β-NaSn 13 resists were evaluated after exposure to radiation for a range of ambient conditions and photon energies. A significant reduction in the C 1s signal versus exposure time was observed, which corresponds to the radiation-induced homolytic cleavage of the butyltin bond in the β-NaSn 13 clusters. To improve the resist sensitivity, we evaluated the effect of oxygen partial pressure during radiation exposures. We found that both photon energy and oxygen partial pressure had a strong influence on the butyl group desorption rate. These studies advance the understanding of radiation-induced processes in β-NaSn 13 photoresists and provide mechanistic insights for EUV photolithography.
AB - Advances in extreme ultraviolet (EUV) photolithography require the development of next-generation resists that allow high-volume nanomanufacturing with a single nanometer patterning resolution. Organotin-based photoresists have demonstrated nanopatterning with high resolution, high sensitivity, and low-line edge roughness. However, very little is known regarding the detailed reaction mechanisms that lead to radiation-induced solubility transitions. In this study, we investigate the interaction of soft X-ray radiation with organotin clusters to better understand radiation-induced chemistries associated with EUV lithography. Butyltin Keggin clusters (β-NaSn 13 ) were used as a model organotin photoresist, and characterization was performed using ambient-pressure X-ray photoelectron spectroscopy. The changes in relative atomic concentrations and associated chemical states in β-NaSn 13 resists were evaluated after exposure to radiation for a range of ambient conditions and photon energies. A significant reduction in the C 1s signal versus exposure time was observed, which corresponds to the radiation-induced homolytic cleavage of the butyltin bond in the β-NaSn 13 clusters. To improve the resist sensitivity, we evaluated the effect of oxygen partial pressure during radiation exposures. We found that both photon energy and oxygen partial pressure had a strong influence on the butyl group desorption rate. These studies advance the understanding of radiation-induced processes in β-NaSn 13 photoresists and provide mechanistic insights for EUV photolithography.
KW - APXPS
KW - EUV lithography
KW - nanocluster
KW - organotin-based photoresist
KW - XAS
UR - http://www.scopus.com/inward/record.url?scp=85060179118&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85060179118&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b19302
DO - 10.1021/acsami.8b19302
M3 - Article
VL - 11
SP - 2526
EP - 2534
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 2
ER -