Amplified spontaneous emission in semiconductor-nanocrystal/ synthetic-opal composites

Optical-gain enhancement via a photonic crystal pseudogap

Garry R. Maskaly, Melissa A. Petruska, Jagjit Nanda, Ilya V. Bezel, Richard D Schaller, Han Htoon, Jeffrey M. Pietryga, Victor I Klimov

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

The effects of the L-point gap on the nanocrystals (NC) spontaneous and stimulated emissions in a synthetic opal infiltrated with a CDSe sol-gel/NC composite were investigated. It was found that despite the low loading of active material, amplified spontaneous emission (ASE) was clearly evident in the infiltrated samples. The sol-gel/NC/PC samples exhibited a reduced ASE threshold ranging from 40 to over 60%, despite a significant decrease in NC volume loading. The results show that in all cases. the ASE lines shift toward the PC L-point gap edges.

Original languageEnglish
Pages (from-to)343-347
Number of pages5
JournalAdvanced Materials
Volume18
Issue number3
DOIs
Publication statusPublished - Feb 3 2006

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Optical gain
Spontaneous emission
Photonic crystals
Nanocrystals
Semiconductor materials
Composite materials
Sol-gels
Stimulated emission

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Amplified spontaneous emission in semiconductor-nanocrystal/ synthetic-opal composites : Optical-gain enhancement via a photonic crystal pseudogap. / Maskaly, Garry R.; Petruska, Melissa A.; Nanda, Jagjit; Bezel, Ilya V.; Schaller, Richard D; Htoon, Han; Pietryga, Jeffrey M.; Klimov, Victor I.

In: Advanced Materials, Vol. 18, No. 3, 03.02.2006, p. 343-347.

Research output: Contribution to journalArticle

Maskaly, Garry R. ; Petruska, Melissa A. ; Nanda, Jagjit ; Bezel, Ilya V. ; Schaller, Richard D ; Htoon, Han ; Pietryga, Jeffrey M. ; Klimov, Victor I. / Amplified spontaneous emission in semiconductor-nanocrystal/ synthetic-opal composites : Optical-gain enhancement via a photonic crystal pseudogap. In: Advanced Materials. 2006 ; Vol. 18, No. 3. pp. 343-347.
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