AMTeS3 (A = K, Rb, Cs; M = Cu, Ag): A new class of compounds based on a new polychalcogenide anion, TeS32-

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

The reaction of Cu or Ag with mixed polychalcogenide flux A2SxTey (A = K, Rb, Cs) yielded RbCuTeS3 (1), CsCuTeS3 (2), α-KAgTeS3 (3), β-KAgTeS3 (4), RbAgTeS3 (5), and CsAgTeS3 (6) possessing new structure types. Compounds 1, 4, 5, and 6 are two-dimensional and isostructural. They crystallize in the monoclinic space group P21/c, with a = 7.434(3) Å, b = 10.526(3) Å, c = 8.234(3) Å, β= 106.13(3)°, V = 619.0(7) Å3 for 1; a = 7.340(2) Å, b = 10.647(2) Å, c = 8.504(2) Å, β= 106.46(2)°, V = 637.4(3) Å3 for 4; a = 7.566(8) Å, b = 10.724(8) Å, c = 8.586(9) Å, β= 106.36(8)°, V = 668(2) Å3 for 5; and a = 7.832(6) Å, b = 10.803(7) Å, c = 8.668(8) Å, β = 106.05(6)°, V = 705(2) Å3 for 6. The structure consists of anionic [MTeS3]nn- (M = Cu or Ag) layers and charge-compensating alkali ions between the layers. Each layer is composed of tetrahedrally coordinated Cu+ or Ag+ centers and trigonal pyramidal TeS32- units, joined together via bridging S atoms. Compound 2 is three-dimensional and crystallizes in the cubic space group P213 with a = 9.107(3) Å and V = 755.4(2) Å3. Its framework is composed of trigonal planar Cu+ centers and TeS32- units. Compound 3 is two-dimensional and crystallizes in the monoclinic space group P21/n with a = 6.171(2) Å, b = 16.406(4) Å, c = 6.318(3) Å, β = 97.32(3)°, and V = 634.4(7) Å3. The structure of [AgTeS3]nn- layers is different from those of 1, 4, 5, and 6, but the TeS32- units bridge Ag+ centers by the same pattern. All compounds are found to be wide band gap semiconductors with RbCuTeS3 possessing the narrowest at 1.95 eV. Thermal analysis studies show that 3, 5, and 6 are the most stable.

Original languageEnglish
Pages (from-to)1890-1898
Number of pages9
JournalJournal of the American Chemical Society
Volume116
Issue number5
Publication statusPublished - Mar 9 1994

Fingerprint

Semiconductors
Alkalies
Anions
Negative ions
Hot Temperature
Ions
Thermoanalysis
Fluxes
Atoms
Wide band gap semiconductors

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

AMTeS3 (A = K, Rb, Cs; M = Cu, Ag) : A new class of compounds based on a new polychalcogenide anion, TeS32-. / Zhang, Xiang; Kanatzidis, Mercouri G.

In: Journal of the American Chemical Society, Vol. 116, No. 5, 09.03.1994, p. 1890-1898.

Research output: Contribution to journalArticle

@article{5b325ae30a064e3eada4d34f8b79b67f,
title = "AMTeS3 (A = K, Rb, Cs; M = Cu, Ag): A new class of compounds based on a new polychalcogenide anion, TeS32-",
abstract = "The reaction of Cu or Ag with mixed polychalcogenide flux A2SxTey (A = K, Rb, Cs) yielded RbCuTeS3 (1), CsCuTeS3 (2), α-KAgTeS3 (3), β-KAgTeS3 (4), RbAgTeS3 (5), and CsAgTeS3 (6) possessing new structure types. Compounds 1, 4, 5, and 6 are two-dimensional and isostructural. They crystallize in the monoclinic space group P21/c, with a = 7.434(3) {\AA}, b = 10.526(3) {\AA}, c = 8.234(3) {\AA}, β= 106.13(3)°, V = 619.0(7) {\AA}3 for 1; a = 7.340(2) {\AA}, b = 10.647(2) {\AA}, c = 8.504(2) {\AA}, β= 106.46(2)°, V = 637.4(3) {\AA}3 for 4; a = 7.566(8) {\AA}, b = 10.724(8) {\AA}, c = 8.586(9) {\AA}, β= 106.36(8)°, V = 668(2) {\AA}3 for 5; and a = 7.832(6) {\AA}, b = 10.803(7) {\AA}, c = 8.668(8) {\AA}, β = 106.05(6)°, V = 705(2) {\AA}3 for 6. The structure consists of anionic [MTeS3]nn- (M = Cu or Ag) layers and charge-compensating alkali ions between the layers. Each layer is composed of tetrahedrally coordinated Cu+ or Ag+ centers and trigonal pyramidal TeS32- units, joined together via bridging S atoms. Compound 2 is three-dimensional and crystallizes in the cubic space group P213 with a = 9.107(3) {\AA} and V = 755.4(2) {\AA}3. Its framework is composed of trigonal planar Cu+ centers and TeS32- units. Compound 3 is two-dimensional and crystallizes in the monoclinic space group P21/n with a = 6.171(2) {\AA}, b = 16.406(4) {\AA}, c = 6.318(3) {\AA}, β = 97.32(3)°, and V = 634.4(7) {\AA}3. The structure of [AgTeS3]nn- layers is different from those of 1, 4, 5, and 6, but the TeS32- units bridge Ag+ centers by the same pattern. All compounds are found to be wide band gap semiconductors with RbCuTeS3 possessing the narrowest at 1.95 eV. Thermal analysis studies show that 3, 5, and 6 are the most stable.",
author = "Xiang Zhang and Kanatzidis, {Mercouri G}",
year = "1994",
month = "3",
day = "9",
language = "English",
volume = "116",
pages = "1890--1898",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "5",

}

TY - JOUR

T1 - AMTeS3 (A = K, Rb, Cs; M = Cu, Ag)

T2 - A new class of compounds based on a new polychalcogenide anion, TeS32-

AU - Zhang, Xiang

AU - Kanatzidis, Mercouri G

PY - 1994/3/9

Y1 - 1994/3/9

N2 - The reaction of Cu or Ag with mixed polychalcogenide flux A2SxTey (A = K, Rb, Cs) yielded RbCuTeS3 (1), CsCuTeS3 (2), α-KAgTeS3 (3), β-KAgTeS3 (4), RbAgTeS3 (5), and CsAgTeS3 (6) possessing new structure types. Compounds 1, 4, 5, and 6 are two-dimensional and isostructural. They crystallize in the monoclinic space group P21/c, with a = 7.434(3) Å, b = 10.526(3) Å, c = 8.234(3) Å, β= 106.13(3)°, V = 619.0(7) Å3 for 1; a = 7.340(2) Å, b = 10.647(2) Å, c = 8.504(2) Å, β= 106.46(2)°, V = 637.4(3) Å3 for 4; a = 7.566(8) Å, b = 10.724(8) Å, c = 8.586(9) Å, β= 106.36(8)°, V = 668(2) Å3 for 5; and a = 7.832(6) Å, b = 10.803(7) Å, c = 8.668(8) Å, β = 106.05(6)°, V = 705(2) Å3 for 6. The structure consists of anionic [MTeS3]nn- (M = Cu or Ag) layers and charge-compensating alkali ions between the layers. Each layer is composed of tetrahedrally coordinated Cu+ or Ag+ centers and trigonal pyramidal TeS32- units, joined together via bridging S atoms. Compound 2 is three-dimensional and crystallizes in the cubic space group P213 with a = 9.107(3) Å and V = 755.4(2) Å3. Its framework is composed of trigonal planar Cu+ centers and TeS32- units. Compound 3 is two-dimensional and crystallizes in the monoclinic space group P21/n with a = 6.171(2) Å, b = 16.406(4) Å, c = 6.318(3) Å, β = 97.32(3)°, and V = 634.4(7) Å3. The structure of [AgTeS3]nn- layers is different from those of 1, 4, 5, and 6, but the TeS32- units bridge Ag+ centers by the same pattern. All compounds are found to be wide band gap semiconductors with RbCuTeS3 possessing the narrowest at 1.95 eV. Thermal analysis studies show that 3, 5, and 6 are the most stable.

AB - The reaction of Cu or Ag with mixed polychalcogenide flux A2SxTey (A = K, Rb, Cs) yielded RbCuTeS3 (1), CsCuTeS3 (2), α-KAgTeS3 (3), β-KAgTeS3 (4), RbAgTeS3 (5), and CsAgTeS3 (6) possessing new structure types. Compounds 1, 4, 5, and 6 are two-dimensional and isostructural. They crystallize in the monoclinic space group P21/c, with a = 7.434(3) Å, b = 10.526(3) Å, c = 8.234(3) Å, β= 106.13(3)°, V = 619.0(7) Å3 for 1; a = 7.340(2) Å, b = 10.647(2) Å, c = 8.504(2) Å, β= 106.46(2)°, V = 637.4(3) Å3 for 4; a = 7.566(8) Å, b = 10.724(8) Å, c = 8.586(9) Å, β= 106.36(8)°, V = 668(2) Å3 for 5; and a = 7.832(6) Å, b = 10.803(7) Å, c = 8.668(8) Å, β = 106.05(6)°, V = 705(2) Å3 for 6. The structure consists of anionic [MTeS3]nn- (M = Cu or Ag) layers and charge-compensating alkali ions between the layers. Each layer is composed of tetrahedrally coordinated Cu+ or Ag+ centers and trigonal pyramidal TeS32- units, joined together via bridging S atoms. Compound 2 is three-dimensional and crystallizes in the cubic space group P213 with a = 9.107(3) Å and V = 755.4(2) Å3. Its framework is composed of trigonal planar Cu+ centers and TeS32- units. Compound 3 is two-dimensional and crystallizes in the monoclinic space group P21/n with a = 6.171(2) Å, b = 16.406(4) Å, c = 6.318(3) Å, β = 97.32(3)°, and V = 634.4(7) Å3. The structure of [AgTeS3]nn- layers is different from those of 1, 4, 5, and 6, but the TeS32- units bridge Ag+ centers by the same pattern. All compounds are found to be wide band gap semiconductors with RbCuTeS3 possessing the narrowest at 1.95 eV. Thermal analysis studies show that 3, 5, and 6 are the most stable.

UR - http://www.scopus.com/inward/record.url?scp=0001163526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001163526&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0001163526

VL - 116

SP - 1890

EP - 1898

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 5

ER -