An isotopic labeling study of the growth of thin oxide films on Si(100)

H. C. Lu; T. Gustafsson; E. P. Gusev; Eric Garfunkel

doi:10.1063/1.115035

An isotopic labeling study of the growth of thin oxide films on Si(100)

H. C. Lu, T. Gustafsson, E. P. Gusev, Eric Garfunkel

Rutgers University

Research output: Contribution to journal › Article

45 Citations (Scopus)

Abstract

The mechanism of thin (2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region.

Original language	English
Pages (from-to)	1742
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115035
Publication status	Published - 1995

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Lu, H. C., Gustafsson, T., Gusev, E. P., & Garfunkel, E. (1995). An isotopic labeling study of the growth of thin oxide films on Si(100). Applied Physics Letters, 67, 1742. https://doi.org/10.1063/1.115035

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10.1063/1.115035