Abstract
The mechanism of thin (2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region.
| Original language | English |
|---|---|
| Pages (from-to) | 1742 |
| Number of pages | 1 |
| Journal | Applied Physics Letters |
| Volume | 67 |
| DOIs | |
| Publication status | Published - 1995 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Fingerprint Dive into the research topics of 'An isotopic labeling study of the growth of thin oxide films on Si(100)'. Together they form a unique fingerprint.
Cite this
Lu, H. C., Gustafsson, T., Gusev, E. P., & Garfunkel, E. (1995). An isotopic labeling study of the growth of thin oxide films on Si(100). Applied Physics Letters, 67, 1742. https://doi.org/10.1063/1.115035