An isotopic labeling study of the growth of thin oxide films on Si(100)

H. C. Lu, T. Gustafsson, E. P. Gusev, Eric Garfunkel

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

The mechanism of thin (2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region.

Original languageEnglish
Pages (from-to)1742
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

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isotopic labeling
oxide films
oxidation
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

An isotopic labeling study of the growth of thin oxide films on Si(100). / Lu, H. C.; Gustafsson, T.; Gusev, E. P.; Garfunkel, Eric.

In: Applied Physics Letters, Vol. 67, 1995, p. 1742.

Research output: Contribution to journalArticle

Lu, H. C. ; Gustafsson, T. ; Gusev, E. P. ; Garfunkel, Eric. / An isotopic labeling study of the growth of thin oxide films on Si(100). In: Applied Physics Letters. 1995 ; Vol. 67. pp. 1742.
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