An isotopic labeling study of the growth of thin oxide films on Si(100)

H. C. Lu, T. Gustafsson, E. P. Gusev, E. Garfunkel

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)

Abstract

The mechanism of thin (<8 nm) oxide growth on Si(100) has been studied by high-resolution medium energy ion scattering in combination with oxygen isotope substitution in the T=800-900°C and 0.1-1 Torr oxygen pressure regime. Isotopic labeling experiments demonstrate that the Deal-Grove model breaks down for these films. In addition to the traditional oxidation reaction at the Si/SiO2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region.

Original languageEnglish
Pages (from-to)1742
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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