An isotopic labeling study of the growth of thin oxide films on Si(100)

H. C. Lu, T. Gustafsson, E. P. Gusev, Eric Garfunkel

Research output: Contribution to journalArticle

45 Citations (Scopus)


The mechanism of thin (2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region.

Original languageEnglish
Pages (from-to)1742
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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