Abstract
The mechanism of thin (2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region.
| Original language | English |
|---|---|
| Pages (from-to) | 1742 |
| Number of pages | 1 |
| Journal | Applied Physics Letters |
| Volume | 67 |
| DOIs | |
| Publication status | Published - 1995 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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An isotopic labeling study of the growth of thin oxide films on Si(100). / Lu, H. C.; Gustafsson, T.; Gusev, E. P.; Garfunkel, Eric.
In: Applied Physics Letters, Vol. 67, 1995, p. 1742.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - An isotopic labeling study of the growth of thin oxide films on Si(100)
AU - Lu, H. C.
AU - Gustafsson, T.
AU - Gusev, E. P.
AU - Garfunkel, Eric
PY - 1995
Y1 - 1995
N2 - The mechanism of thin (2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region.
AB - The mechanism of thin (2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region.
UR - http://www.scopus.com/inward/record.url?scp=10044269757&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=10044269757&partnerID=8YFLogxK
U2 - 10.1063/1.115035
DO - 10.1063/1.115035
M3 - Article
VL - 67
SP - 1742
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
ER -