An isotopic labeling study of the growth of thin oxide films on Si(100)

H. C. Lu, T. Gustafsson, E. P. Gusev, Eric Garfunkel

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Abstract

The mechanism of thin (2 interface, two other spatially specific reactions take place during thermal oxidation: an exchange reaction at the oxide surface and an oxidation reaction in the near-interfacial region.

Original languageEnglish
Pages (from-to)1742
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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