An upper bound to carrier multiplication efficiency in type II colloidal quantum dots

David Gachet, Assaf Avidan, Iddo Pinkas, Dan Oron

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

We experimentally investigate carrier multiplication (CM) in type II CdTe/CdSe quantum dot (QD) heterostructures by the means of a simple and robust subnanosecond transient photoluminescence spectroscopy setup. Experimental conditions were set to minimize the blurring of the CM signature by extraneous effects. The extracted photon energy threshold for CM is consistent with previous studies in CdSe and CdTe QDs (around 2.65 times the type II energy band gap) and we can infer an upper bound to CM yield. This study indicates that, while CM is probably present in type II QD heterostructures below the CM threshold for each constituent separately, it exhibits only a modest yield.

Original languageEnglish
Pages (from-to)164-170
Number of pages7
JournalNano letters
Volume10
Issue number1
DOIs
Publication statusPublished - Jan 13 2010

Keywords

  • Carrier multiplication
  • Colloidal quantum dots
  • Type-ii band alignment

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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