An upper bound to carrier multiplication efficiency in type II colloidal quantum dots

David Gachet, Assaf Avidan, Iddo Pinkas, Dan Oron

Research output: Contribution to journalArticle

66 Citations (Scopus)

Abstract

We experimentally investigate carrier multiplication (CM) in type II CdTe/CdSe quantum dot (QD) heterostructures by the means of a simple and robust subnanosecond transient photoluminescence spectroscopy setup. Experimental conditions were set to minimize the blurring of the CM signature by extraneous effects. The extracted photon energy threshold for CM is consistent with previous studies in CdSe and CdTe QDs (around 2.65 times the type II energy band gap) and we can infer an upper bound to CM yield. This study indicates that, while CM is probably present in type II QD heterostructures below the CM threshold for each constituent separately, it exhibits only a modest yield.

Original languageEnglish
Pages (from-to)164-170
Number of pages7
JournalNano Letters
Volume10
Issue number1
DOIs
Publication statusPublished - Jan 13 2010

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multiplication
Semiconductor quantum dots
Heterojunctions
quantum dots
Photoluminescence spectroscopy
Band structure
Energy gap
Photons
thresholds
blurring
energy bands
signatures
photoluminescence
photons
spectroscopy

Keywords

  • Carrier multiplication
  • Colloidal quantum dots
  • Type-ii band alignment

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

An upper bound to carrier multiplication efficiency in type II colloidal quantum dots. / Gachet, David; Avidan, Assaf; Pinkas, Iddo; Oron, Dan.

In: Nano Letters, Vol. 10, No. 1, 13.01.2010, p. 164-170.

Research output: Contribution to journalArticle

Gachet, David ; Avidan, Assaf ; Pinkas, Iddo ; Oron, Dan. / An upper bound to carrier multiplication efficiency in type II colloidal quantum dots. In: Nano Letters. 2010 ; Vol. 10, No. 1. pp. 164-170.
@article{646b73ed639c40b7a7d4a0387450fe33,
title = "An upper bound to carrier multiplication efficiency in type II colloidal quantum dots",
abstract = "We experimentally investigate carrier multiplication (CM) in type II CdTe/CdSe quantum dot (QD) heterostructures by the means of a simple and robust subnanosecond transient photoluminescence spectroscopy setup. Experimental conditions were set to minimize the blurring of the CM signature by extraneous effects. The extracted photon energy threshold for CM is consistent with previous studies in CdSe and CdTe QDs (around 2.65 times the type II energy band gap) and we can infer an upper bound to CM yield. This study indicates that, while CM is probably present in type II QD heterostructures below the CM threshold for each constituent separately, it exhibits only a modest yield.",
keywords = "Carrier multiplication, Colloidal quantum dots, Type-ii band alignment",
author = "David Gachet and Assaf Avidan and Iddo Pinkas and Dan Oron",
year = "2010",
month = "1",
day = "13",
doi = "10.1021/nl903172f",
language = "English",
volume = "10",
pages = "164--170",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "1",

}

TY - JOUR

T1 - An upper bound to carrier multiplication efficiency in type II colloidal quantum dots

AU - Gachet, David

AU - Avidan, Assaf

AU - Pinkas, Iddo

AU - Oron, Dan

PY - 2010/1/13

Y1 - 2010/1/13

N2 - We experimentally investigate carrier multiplication (CM) in type II CdTe/CdSe quantum dot (QD) heterostructures by the means of a simple and robust subnanosecond transient photoluminescence spectroscopy setup. Experimental conditions were set to minimize the blurring of the CM signature by extraneous effects. The extracted photon energy threshold for CM is consistent with previous studies in CdSe and CdTe QDs (around 2.65 times the type II energy band gap) and we can infer an upper bound to CM yield. This study indicates that, while CM is probably present in type II QD heterostructures below the CM threshold for each constituent separately, it exhibits only a modest yield.

AB - We experimentally investigate carrier multiplication (CM) in type II CdTe/CdSe quantum dot (QD) heterostructures by the means of a simple and robust subnanosecond transient photoluminescence spectroscopy setup. Experimental conditions were set to minimize the blurring of the CM signature by extraneous effects. The extracted photon energy threshold for CM is consistent with previous studies in CdSe and CdTe QDs (around 2.65 times the type II energy band gap) and we can infer an upper bound to CM yield. This study indicates that, while CM is probably present in type II QD heterostructures below the CM threshold for each constituent separately, it exhibits only a modest yield.

KW - Carrier multiplication

KW - Colloidal quantum dots

KW - Type-ii band alignment

UR - http://www.scopus.com/inward/record.url?scp=74849103310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74849103310&partnerID=8YFLogxK

U2 - 10.1021/nl903172f

DO - 10.1021/nl903172f

M3 - Article

VL - 10

SP - 164

EP - 170

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 1

ER -