Analysis of plasma-grown GaAs oxide films

R. L. Kauffman, Leonard C Feldman, J. M. Poate, Robert P. H. Chang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Thin oxide films of GaAs grown in a plasma have been analyzed using Rutherford backscattering and ion-induced x rays. Films whose thicknesses are greater than 1000 Å have a composition of O:Ga:As of 3:1.07:1. For the thinner films, the oxygen content is less indicating an incomplete oxidation.

Original languageEnglish
Pages (from-to)319-321
Number of pages3
JournalApplied Physics Letters
Volume30
Issue number7
DOIs
Publication statusPublished - 1977

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oxide films
backscattering
film thickness
oxidation
oxygen
thin films
ions
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Analysis of plasma-grown GaAs oxide films. / Kauffman, R. L.; Feldman, Leonard C; Poate, J. M.; Chang, Robert P. H.

In: Applied Physics Letters, Vol. 30, No. 7, 1977, p. 319-321.

Research output: Contribution to journalArticle

Kauffman, R. L. ; Feldman, Leonard C ; Poate, J. M. ; Chang, Robert P. H. / Analysis of plasma-grown GaAs oxide films. In: Applied Physics Letters. 1977 ; Vol. 30, No. 7. pp. 319-321.
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