Analysis of plasma-grown GaAs oxide films

R. L. Kauffman, Leonard C Feldman, J. M. Poate, Robert P. H. Chang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Thin oxide films of GaAs grown in a plasma have been analyzed using Rutherford backscattering and ion-induced x rays. Films whose thicknesses are greater than 1000 Å have a composition of O:Ga:As of 3:1.07:1. For the thinner films, the oxygen content is less indicating an incomplete oxidation.

Original languageEnglish
Pages (from-to)319-321
Number of pages3
JournalApplied Physics Letters
Volume30
Issue number7
DOIs
Publication statusPublished - 1977

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Analysis of plasma-grown GaAs oxide films'. Together they form a unique fingerprint.

  • Cite this