Analysis of time-resolved photocurrent transients at semiconductor/liquid interfaces

C. N. Kenyon, Gail N. Ryba, Nathan S Lewis

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Small signal photocurrent transients have been measured for n-Si/CH3OH-Me2Fc+/0/Pt, n-Si/Au/ CH3OH-Me2Fc+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)2/Ni, n-TiO2/NaOH(aq)/Ni(OH)2/Ni, and H-TiO2/ NaOH(aq)-Fe(CN)6 3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH3OH-Me2Fc+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.

Original languageEnglish
Pages (from-to)12928-12936
Number of pages9
JournalJournal of Physical Chemistry
Volume97
Issue number49
Publication statusPublished - 1993

Fingerprint

Photocurrents
photocurrents
Semiconductor materials
Liquids
liquids
cells
Electric space charge
equivalent circuits
Equivalent circuits
Charge transfer
space charge
radio frequencies
Capacitance
capacitance
Microwaves
charge transfer
microwaves
conductivity
Electrodes
electrodes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Analysis of time-resolved photocurrent transients at semiconductor/liquid interfaces. / Kenyon, C. N.; Ryba, Gail N.; Lewis, Nathan S.

In: Journal of Physical Chemistry, Vol. 97, No. 49, 1993, p. 12928-12936.

Research output: Contribution to journalArticle

@article{c70445f0965d4713bb87fb41154c7de2,
title = "Analysis of time-resolved photocurrent transients at semiconductor/liquid interfaces",
abstract = "Small signal photocurrent transients have been measured for n-Si/CH3OH-Me2Fc+/0/Pt, n-Si/Au/ CH3OH-Me2Fc+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)2/Ni, n-TiO2/NaOH(aq)/Ni(OH)2/Ni, and H-TiO2/ NaOH(aq)-Fe(CN)6 3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH3OH-Me2Fc+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.",
author = "Kenyon, {C. N.} and Ryba, {Gail N.} and Lewis, {Nathan S}",
year = "1993",
language = "English",
volume = "97",
pages = "12928--12936",
journal = "Journal of Physical Chemistry",
issn = "0022-3654",
publisher = "American Chemical Society",
number = "49",

}

TY - JOUR

T1 - Analysis of time-resolved photocurrent transients at semiconductor/liquid interfaces

AU - Kenyon, C. N.

AU - Ryba, Gail N.

AU - Lewis, Nathan S

PY - 1993

Y1 - 1993

N2 - Small signal photocurrent transients have been measured for n-Si/CH3OH-Me2Fc+/0/Pt, n-Si/Au/ CH3OH-Me2Fc+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)2/Ni, n-TiO2/NaOH(aq)/Ni(OH)2/Ni, and H-TiO2/ NaOH(aq)-Fe(CN)6 3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH3OH-Me2Fc+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.

AB - Small signal photocurrent transients have been measured for n-Si/CH3OH-Me2Fc+/0/Pt, n-Si/Au/ CH3OH-Me2Fc+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)2/Ni, n-TiO2/NaOH(aq)/Ni(OH)2/Ni, and H-TiO2/ NaOH(aq)-Fe(CN)6 3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH3OH-Me2Fc+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.

UR - http://www.scopus.com/inward/record.url?scp=0000656023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000656023&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000656023

VL - 97

SP - 12928

EP - 12936

JO - Journal of Physical Chemistry

JF - Journal of Physical Chemistry

SN - 0022-3654

IS - 49

ER -