Abstract
Small signal photocurrent transients have been measured for n-Si/CH3OH-Me2Fc+/0/Pt, n-Si/Au/ CH3OH-Me2Fc+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)2/Ni, n-TiO2/NaOH(aq)/Ni(OH)2/Ni, and H-TiO2/ NaOH(aq)-Fe(CN)6 3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH3OH-Me2Fc+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.
| Original language | English |
|---|---|
| Pages (from-to) | 12928-12936 |
| Number of pages | 9 |
| Journal | Journal of Physical Chemistry |
| Volume | 97 |
| Issue number | 49 |
| Publication status | Published - 1993 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
Cite this
Analysis of time-resolved photocurrent transients at semiconductor/liquid interfaces. / Kenyon, C. N.; Ryba, Gail N.; Lewis, Nathan S.
In: Journal of Physical Chemistry, Vol. 97, No. 49, 1993, p. 12928-12936.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Analysis of time-resolved photocurrent transients at semiconductor/liquid interfaces
AU - Kenyon, C. N.
AU - Ryba, Gail N.
AU - Lewis, Nathan S
PY - 1993
Y1 - 1993
N2 - Small signal photocurrent transients have been measured for n-Si/CH3OH-Me2Fc+/0/Pt, n-Si/Au/ CH3OH-Me2Fc+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)2/Ni, n-TiO2/NaOH(aq)/Ni(OH)2/Ni, and H-TiO2/ NaOH(aq)-Fe(CN)6 3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH3OH-Me2Fc+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.
AB - Small signal photocurrent transients have been measured for n-Si/CH3OH-Me2Fc+/0/Pt, n-Si/Au/ CH3OH-Me2Fc+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)2/Ni, n-TiO2/NaOH(aq)/Ni(OH)2/Ni, and H-TiO2/ NaOH(aq)-Fe(CN)6 3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH3OH-Me2Fc+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.
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M3 - Article
VL - 97
SP - 12928
EP - 12936
JO - Journal of Physical Chemistry
JF - Journal of Physical Chemistry
SN - 0022-3654
IS - 49
ER -