Analysis of time-resolved photocurrent transients at semiconductor/liquid interfaces

C. N. Kenyon; Gail N. Ryba; Nathan S Lewis

Analysis of time-resolved photocurrent transients at semiconductor/liquid interfaces

C. N. Kenyon, Gail N. Ryba, Nathan S Lewis

California Institute of Technology

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

Small signal photocurrent transients have been measured for n-Si/CH₃OH-Me₂Fc^+/0/Pt, n-Si/Au/ CH₃OH-Me₂Fc^+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)₂/Ni, n-TiO₂/NaOH(aq)/Ni(OH)₂/Ni, and H-TiO₂/ NaOH(aq)-Fe(CN)₆ ^3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH₃OH-Me₂Fc^+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.

Original language	English
Pages (from-to)	12928-12936
Number of pages	9
Journal	Journal of Physical Chemistry
Volume	97
Issue number	49
Publication status	Published - 1993

ASJC Scopus subject areas

Physical and Theoretical Chemistry

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Kenyon, C. N., Ryba, G. N., & Lewis, N. S. (1993). Analysis of time-resolved photocurrent transients at semiconductor/liquid interfaces. Journal of Physical Chemistry, 97(49), 12928-12936.

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abstract = "Small signal photocurrent transients have been measured for n-Si/CH3OH-Me2Fc+/0/Pt, n-Si/Au/ CH3OH-Me2Fc+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)2/Ni, n-TiO2/NaOH(aq)/Ni(OH)2/Ni, and H-TiO2/ NaOH(aq)-Fe(CN)6 3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH3OH-Me2Fc+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.",

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AU - Ryba, Gail N.

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N2 - Small signal photocurrent transients have been measured for n-Si/CH3OH-Me2Fc+/0/Pt, n-Si/Au/ CH3OH-Me2Fc+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)2/Ni, n-TiO2/NaOH(aq)/Ni(OH)2/Ni, and H-TiO2/ NaOH(aq)-Fe(CN)6 3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH3OH-Me2Fc+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.

AB - Small signal photocurrent transients have been measured for n-Si/CH3OH-Me2Fc+/0/Pt, n-Si/Au/ CH3OH-Me2Fc+/0/Pt, n-Si/Pt/NaOH(aq)/Ni(OH)2/Ni, n-TiO2/NaOH(aq)/Ni(OH)2/Ni, and H-TiO2/ NaOH(aq)-Fe(CN)6 3-/4-/Pt cells. Even though the radio-frequency and microwave conductivity signals for photoexcited n-Si/CH3OH-Me2Fc+/0 contacts persist for > 100 μs, the photocurrent transients for these interfaces decayed in <10 μs and were limited by the series resistance of the cell in combination with the space-charge capacitance of the semiconductor. An equivalent circuit model is presented and physically justified in order to explain this behavior. The model is also used to elucidate the conditions under which photocurrent transients at semiconductor electrodes can be expected to yield information regarding the faradaic charge-transfer rate across the semiconductor/liquid interface.

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